NF 817 Search Results

55n60

Abstract: transistor Bc 949 transistor BC 56 BDP 71 AF-Transistor siemens sot223 Transistor bdp 71 4126P SOT-223 2907 BC 948
Contextual Info: Transistoren Transistors NF-Transistoren Transistoren für allgemeine und Schaltanwendungen AF-Transistors General Purpose and Switching Transistors Type N = NPN P = PNP Maximum Ratings Chara cteristics [Tk - 2>5°C J'CEO V mA ^CBQ Ptot / t mW MHz nA at VQB0 hfE

NF 817

Abstract: 12v ah battery 12V50AH rechargeable battery DOD 76116
Contextual Info: PRODUCT SPECIFICATIONS SHEET M ODEL NUMBER DIMENSIONS G H12500 22 22- NF 12V50AH The GH12500 is a general purpose battery with a standard rate performance and a float life of 3 - 5 years. As with all Prism batteries, all are rechargeable, highly efficient, maintenance free, leak proof,

952 16 418

Abstract: MODELS 248, 249 ZPUL-21 ZPUL-30P NF 723
Contextual Info: PULSE AMPLIFIERS Coaxial INVERTING & NON-INVERTING up to 200 mW, 2.5 KHz to 700 MHz ZPUL Up to 200 mW FREQ. MHz GAIN (dB) MAXIMUM RISE/FALL PULSE POLARITY POWER (dBm) WIDTH* TIME DYNAMIC RANGE VSWR Typ. NF* Intercept dB 3rd order Typ. Typ. Volt Current

full radius profile

Abstract: Direct Coupling - Full Radius Profile series 443
Contextual Info: 443 443-009 Submersible EMI/RFI Cable Sealing Backshell Band-in-a-Can with Strain-Relief Direct Coupling - Full Radius Profile 443 F N 009 NF 16 12 H K P CONNECTOR DESIGNATORS A-F-H-L-S Polysulfide Omit for none Connector Designator B = Band K = Precoiled Band

q406 transistor

Abstract: nf 820 transistor q406 q406 transistor data
Contextual Info: SN 7000 I nf ineon technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type ybs SN 7000 60 V Type SN 7000 SN 7000 Ordering Code Q62702-S638 Q62702-S637 0.25 A ^DS(on) Package Marking 5Q

Glenair 447

Contextual Info: 447 447-425 EMI/RFI Non-Environmental Band-in-a-Can Backshell with Cable Clamp Strain-Relief Rotatable Coupling - Full Radius Profile 447 F N 425 NF 16 12 K P CONNECTOR DESIGNATORS A-F-H-L-S ROTATABLE COUPLING Product Series Polysulfide Omit for none Connector Designator

NEC 3536

Contextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •

20656

Contextual Info: 443 443-009 Submersible EMI/RFI Cable Sealing Backshell Band-in-a-Can with Strain-Relief Direct Coupling - Full Radius Profile 443 F N 009 NF 16 12 H K P CONNECTOR DESIGNATORS A-F-H-L-S Polysulfide Omit for none Connector Designator B = Band K = Precoiled Band

full radius profile

Abstract: series 447
Contextual Info: 447 447-425 EMI/RFI Non-Environmental Band-in-a-Can Backshell with Cable Clamp Strain-Relief Rotatable Coupling - Full Radius Profile 447 F N 425 NF 16 12 K P CONNECTOR DESIGNATORS A-F-H-L-S ROTATABLE COUPLING Product Series Polysulfide Omit for none Connector Designator

Contextual Info: BFP620F Low Noise SiGe:C Bipolar RF Transistor • High gain low noise RF transistor 3 • Based on Infineon's reliable high volume 2 4 1 Silicon Germanium technology • Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz Outstanding noise figure NF min = 1.3 dB at 6 GHz

Contextual Info: 2SC5138 Silicon NPN Epitaxial HITACHI ADE-208-225 1st. Edition Application V H F / UHF wide band am plifier Features • High gain bandwidth product fT = 6 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 M H z Outline SMPAK

063 793

Abstract: transistor v63
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain

Contextual Info: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain |S 21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz VD = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.2 dB at 1.8 GHz VD

INFINEON marking BGA

Abstract: BGA420 t501
Contextual Info: BGA420 Si-MMIC-Amplifier in SIEGET  25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain |S21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz V D = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.3 dB at 1.8 GHz VD

NEC K 2500

Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz

817 CN

Contextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm

NEC D 809 F

Abstract: NEC D 809 71383B NEC D 809 k
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm

TRANSISTOR D434

Abstract: d1859 transistor D1585 NE674 d1859 D588 transistor d998 transistor transistor D467 d638 transistor transistor D313
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 1.4 dB TYP. at f = 12 GHz x High associated gain Ga = 10 dB TYP. at f = 12 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm

C10535E

Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION

HT 1000-4 power amplifier

Abstract: mip 836 ic mip 836 schematic weigh scale AD7730 circuit integrate TB 1226 CN wheelchair motor 24v SCHEMATIC ad7730 1000 watt RMS professional audio power amplifier schematic Circuit ad7730 pcb circuit example electric bicycle dc motor control 36v
Contextual Info: NEW PRODUCT APPLICATIONS - 1 9 9 8 spring edition BOOST vi n O ^ SW ITC H V|N +7V TO +24V ADP3050-5 O V 0UT +5V @ 1A BIAS ON FB GND COMP 1 22|xF 4 k il 1 nF 1 0 0 jlF * V OUT V|N C - Q1 -O h anyCAP LDO TOPOLOGY - | - C COMP N O N IN V E R T IN G W ID E B A N D

Tektronix 2212

Abstract: AN231 schematic diagram bluetooth headset TI AN175 BGA728L7 C166 Mifare* capacitor inductor sma M7 diode schematic diagram of FM radio
Contextual Info: B GA 7 2 8 L 7 Bro a d b a n d L o w No i s e A m p l i fi e r f o r FM R a d i o Ap p l i c a ti o n s u s i n g B GA 7 2 8 L 7 In c l u d i n g a c o n f i g u r a ti o n fo r mi n i mu m NF a n d o n e fo r b e s t i n p u t ma tc h i n g i n a 5 0 Oh m s ys te m

XE166

Abstract: XC2000 xc2000 reference manual AP24026 reference design using infineon infineon qfp144 QFP-100 AP16116
Contextual Info: Application Note, V1.1, October 2007 AP16116 XC2000 & XE166 Families Design Guidelines for XC2000 & XE166 Microcontroller Board Layout Microcontrollers Edition 2007-10 Published by Infineon Technologies AG 81726 Münich, Germany 2007 Infineon Technologies AG

BGA734L16

Abstract: FOMA1700 FOMA800 JESD22-A114 T1520 FR4 Prepreg
Contextual Info: Data Sheet, V1.0, January 2008 BGA734L16 Low Power Tri-Band UMTS LNA 2100, 1900, 800 MHz RF & Protection Devices Edition 2008-01-25 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer