NF 742 Search Results

C635

Abstract: T1EB UCA0 C634 BCX73
Contextual Info: NPISI-Transistoren für NF-Treiber- und Endstufen B CX 73 B CX 74 BCX 73 und BCX 74sind epitaktische NPN-Silizium-Planar-Transistoren im Kunststoffgehäuse 10 A3 DIN 41 868 ähnlich S O T -3 0 . Die Transistoren sind für den Einsatz in NF-Treiber- und Endstufen, sowie für Schalteranwendungen geeignet. Als Komplementär-Transistoren dazu

nf 742

Abstract: 680/nf 742
Contextual Info: Ceramic Capacitors Leaded multilayer, Mono-axial series Dielectric Series 2222 . . Rated DC voltage Capacitance range pF/nF NPO X7R Z5U 740 . 50 V 741 . 50 V 742 . 50 V 10 pF 12 15 18 22 27 33 39 47 56 68 82 100 120 150 180 220 270 330

Contextual Info: Mini-Circuits - Specification for Amplifier - ZFL-1000GH Amplifier print this page ZFL-1000GH Frequency MHz f L - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range VSWR DC Power Output 1 dB Comp. Max. Flatness Input (no damage) NF dB Typ. 10-1200 24 ±1.50

npn UHF transistor 2N5179

Contextual Info: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters

Contextual Info: BUZ 172 I nf ineon tachnologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vds b flDS on Package Ordering Code BUZ 172 -100 V -5.5 A 0.6 £2 TO-220 AB C67078-S1451-A2 Maximum Ratings Parameter Symbol Continuous drain current

TRANSISTOR nf 842

Abstract: D 843 Transistor transistor su 312
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:

Contextual Info: plerowTM APM0742-P29 High OIP3 Medium Power Amplifier Module Features Description • S21 = 34.9 dB @ 698 MHz = 33.1 dB @ 787 MHz · NF of 6.6 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er amplifier mini-module for such application band in

2N5179

Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10

LB 1639

Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
Contextual Info: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz

Contextual Info: n I I w l I I W W SURFACE MOUNT TANTALUM CHIPS THE LEADER IN TANTALUM CAPACITORS Type LSR FEATURES • Meets or exceeds EIA 535 BAAC and IECQ standards QC300801/US0001, IS - 28 • Pre-conditioned, surge current tested for maximum robustness • Capacitance range: 10 |xf to 330 nf

LFCSP

Abstract: jc212
Contextual Info: FEATURES 3 dB bandwidth of 6 GHz AV = 6 dB Pin strappable gain adjust: 6 dB, 12 dB, and 15.5 dB Gain range from 0 dB to 15.5 dB using two external resistors Differential or single-ended input to differential output Low noise input stage: NF = 8.7 dB at 15.5 dB gain

2N5179

Abstract: ic 741 datasheet pdf of 741 ic IC 741 MSC1305 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc

2N5179

Abstract: transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc

Contextual Info: plerowTM ALN0742WT Internally Matched LNA Module Features Description • S21 = 19.5 dB @ 698 MHz = 18.5 dB @ 787 MHz · NF of 0.70 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er The plerowTM ALN-series is the compactly designed surface-mount

Contextual Info: plerowTM APM0743-P29 Low Noise & High OIP3 Medium Power Amplifier Module Features Description • S21 = 50.6 dB @ 698 MHz = 49.4 dB @ 787 MHz · NF of 1.0 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply

TRANSISTOR nf 842

Abstract: TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz HIGH GAIN: IS2 1 EI2 = 9.0 dB TYP at 1 GHz

LB 1639

Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA

transistor Bf 444

Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA

Contextual Info: FUNCTIONAL BLOCK DIAGRAM FEATURES 3 dB bandwidth of 6 GHz AV = 6 dB Pin strappable gain adjust: 6 dB, 12 dB, and 15.5 dB Gain range from 0 dB to 15.5 dB using two external resistors Differential or single-ended input to differential output Low noise input stage: NF = 8.7 dB at 15.5 dB gain

Contextual Info: plerowTM ALN0742 Internally Matched LNA Module Features Description • S21 = 37.6 dB @ 698 MHz = 36.4 dB @ 787 MHz · NF of 0.65 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount

Contextual Info: plerowTM ALN0742AT Internally Matched LNA Module Features Description • S21 = 19.2 dB @ 698 MHz = 18.8 dB @ 787 MHz · NF of 0.8 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount

Contextual Info: Mini-Circuits - Specification for Amplifier - ZHL-2-12 Amplifier print this page ZHL-2-12 Frequency MHz fL - fU GAIN, dB Min. Max. Flatness Maximum Power, dBm Dynamic Range DC Power Min. Input no damage NF dB Typ. 10-1200 24 ±1.00 +29.00 +10.00 4.00 Lw=low range(fL to fU/2) U=upper range(fU/2 to fU)

Contextual Info: plerowTM ALN0743 Internally Matched LNA Module Features Description • S21 = 37.6 dB @ 698 MHz = 36.4 dB @ 787 MHz · NF of 0.7 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount