NF 742 Search Results

C635

Abstract: T1EB UCA0 C634 BCX73
Contextual Info: NPISI-Transistoren für NF-Treiber- und Endstufen B CX 73 B CX 74 BCX 73 und BCX 74sind epitaktische NPN-Silizium-Planar-Transistoren im Kunststoffgehäuse 10 A3 DIN 41 868 ähnlich S O T -3 0 . Die Transistoren sind für den Einsatz in NF-Treiber- und Endstufen, sowie für Schalteranwendungen geeignet. Als Komplementär-Transistoren dazu

nf 742

Abstract: 680/nf 742
Contextual Info: Ceramic Capacitors Leaded multilayer, Mono-axial series Dielectric Series 2222 . . Rated DC voltage Capacitance range pF/nF NPO X7R Z5U 740 . 50 V 741 . 50 V 742 . 50 V 10 pF 12 15 18 22 27 33 39 47 56 68 82 100 120 150 180 220 270 330

Contextual Info: Mini-Circuits - Specification for Amplifier - ZFL-1000GH Amplifier print this page ZFL-1000GH Frequency MHz f L - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range VSWR DC Power Output 1 dB Comp. Max. Flatness Input (no damage) NF dB Typ. 10-1200 24 ±1.50

npn UHF transistor 2N5179

Contextual Info: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters

Contextual Info: BUZ 172 I nf ineon tachnologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vds b flDS on Package Ordering Code BUZ 172 -100 V -5.5 A 0.6 £2 TO-220 AB C67078-S1451-A2 Maximum Ratings Parameter Symbol Continuous drain current

TRANSISTOR nf 842

Abstract: D 843 Transistor transistor su 312
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:

Contextual Info: plerowTM APM0742-P29 High OIP3 Medium Power Amplifier Module Features Description • S21 = 34.9 dB @ 698 MHz = 33.1 dB @ 787 MHz · NF of 6.6 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er amplifier mini-module for such application band in

2N5179

Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10

LB 1639

Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
Contextual Info: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz

Contextual Info: n I I w l I I W W SURFACE MOUNT TANTALUM CHIPS THE LEADER IN TANTALUM CAPACITORS Type LSR FEATURES • Meets or exceeds EIA 535 BAAC and IECQ standards QC300801/US0001, IS - 28 • Pre-conditioned, surge current tested for maximum robustness • Capacitance range: 10 |xf to 330 nf

LFCSP

Abstract: jc212
Contextual Info: FEATURES 3 dB bandwidth of 6 GHz AV = 6 dB Pin strappable gain adjust: 6 dB, 12 dB, and 15.5 dB Gain range from 0 dB to 15.5 dB using two external resistors Differential or single-ended input to differential output Low noise input stage: NF = 8.7 dB at 15.5 dB gain

2N5179

Abstract: ic 741 datasheet pdf of 741 ic IC 741 MSC1305 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc

2N5179

Abstract: transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc

Contextual Info: plerowTM APM0743-P29 Low Noise & High OIP3 Medium Power Amplifier Module Features Description • S21 = 50.6 dB @ 698 MHz = 49.4 dB @ 787 MHz · NF of 1.0 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply

LB 1639

Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA

transistor Bf 444

Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA

Contextual Info: plerowTM ALN0742 Internally Matched LNA Module Features Description • S21 = 37.6 dB @ 698 MHz = 36.4 dB @ 787 MHz · NF of 0.65 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount

Contextual Info: plerowTM ALN0742AT Internally Matched LNA Module Features Description • S21 = 19.2 dB @ 698 MHz = 18.8 dB @ 787 MHz · NF of 0.8 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount

Contextual Info: Mini-Circuits - Specification for Amplifier - ZHL-2-12 Amplifier print this page ZHL-2-12 Frequency MHz fL - fU GAIN, dB Min. Max. Flatness Maximum Power, dBm Dynamic Range DC Power Min. Input no damage NF dB Typ. 10-1200 24 ±1.00 +29.00 +10.00 4.00 Lw=low range(fL to fU/2) U=upper range(fU/2 to fU)

Contextual Info: plerowTM ALN0743 Internally Matched LNA Module Features Description • S21 = 37.6 dB @ 698 MHz = 36.4 dB @ 787 MHz · NF of 0.7 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount

Contextual Info: plerowTM ALN0742T2 Internally Matched LNA Module Features Description • S21 = 37.6 dB @ 698 MHz = 38.4 dB @ 787 MHz · NF of 0.70 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount

Contextual Info: plerowTM ALN0743AT Internally Matched LNA Module Features Description • S21 = 22.6 dB @ 698 MHz = 21.4 dB @ 787 MHz · NF of 0.55 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount

HT 1000-4 power amplifier

Abstract: mip 836 ic mip 836 schematic weigh scale AD7730 circuit integrate TB 1226 CN wheelchair motor 24v SCHEMATIC ad7730 1000 watt RMS professional audio power amplifier schematic Circuit ad7730 pcb circuit example electric bicycle dc motor control 36v
Contextual Info: NEW PRODUCT APPLICATIONS - 1 9 9 8 spring edition BOOST vi n O ^ SW ITC H V|N +7V TO +24V ADP3050-5 O V 0UT +5V @ 1A BIAS ON FB GND COMP 1 22|xF 4 k il 1 nF 1 0 0 jlF * V OUT V|N C - Q1 -O h anyCAP LDO TOPOLOGY - | - C COMP N O N IN V E R T IN G W ID E B A N D