NF 711 Search Results

a1091 transistor

Contextual Info: Ordering number : ENA1091A 2SC5490A RF Transistor 10V, 30mA, fT=8GHz, NPN Single SSFP http://onsemi.com Features • • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ

Hitachi DSA002783

Contextual Info: 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711B Z 3rd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)

sot143 marking code G2

Abstract: Hitachi DSA001652
Contextual Info: 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711A Z 2nd. Edition Dec. 1998 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)

Contextual Info: TOSHIBA 2SC5263 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : Gain = lldB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SC5263

Contextual Info: TOSHIBA 2SC5263 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : Gain = lldB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: Ordering number : ENA1092A 2SC5536A RF Transistor 12V, 50mA, fT=1.7GHz, NPN Single SSFP http://onsemi.com Features • • • • Low-noise : NF=1.8dB typ f=150MHz 2 High gain : ⏐S21e⏐ =16dB typ (f=150MHz) Ultrasmall, slim flat-lead package (1.4mmx0.8mm×0.6mm)

FMM5702X

Abstract: FMM5702
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

FMM5702

Abstract: FMM5702X 34500 544 mmic 2732G NF 936
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

874 561 0 4V

Abstract: FMM5702X FMM5702
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

Contextual Info: MOTOROLA Order th is docum ent by MHW8272/D SEMICONDUCTOR TECHNICAL DATA The RF Line 128-C hannel 860 MHz CATV Line Extender A m plifier • Specified for 128-Channel Performance • Broadband Power Gain — Gp = 27 dB (Typ) • Broadband Noise Figure NF = 6 dB (Typ) @ 860 MHz

NEC K 2500

Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz

2SC4915

Abstract: MJE 131
Contextual Info: 2SC4915 SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC4915 1 2 3 CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LC 6 1 CC 1 3 CBC 1 2 Q1 6 5 + AREA = .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM + RE +

equivalent transistor 2N1711

Abstract: 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package 2N328A transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF

transistor c429

Abstract: zo 103 ma c336 transistors C338 c428 transistor Q62702-C338 WS450 16-BIS
Contextual Info: BCW 61 BCX 71 PN P -Transistoren fü r IM F-Vorstufen und S chalteran w en dung BCW 61 und BCX 71 sind epitaktische PNP-Silizium-Planar-Transistoren mit Plastikum­ hüllung 23 A 3 DIN 41 869 SOT-23 für NF-Vorstufen und Schalteranwendungen. Sie eignen sich besonders für Dick- und Dünnfilmschaltungen. Beide Typen BCW 61 und

tms4c1050

Abstract: TDA2579 TDA8709 saa4940 TMS4C1050-60 TV horizontal Deflection Systems SAA4951 SAA4951WP SAA7151 SAA7157
Contextual Info: INTEGRATED CIRCUITS SAA 4951 Memory controller Preliminary specification File under Integrated Circuits, IC02 April 1994 Philips Semiconductors PHILIPS PHILIPS 711052b 0077TSD 211 Preliminary specification Philips Semiconductors Memory controller SAA4951 FEATURES

DL 711 PHILIPS

Abstract: BY206 BLW34 BZY88-C3V3 BZY88C3V3 philips dl 711 cc cv2 100 170 mml 600 TRANSISTOR BLW34 preset potentiometer
Contextual Info: bSE T> 711DÖ2b 0Db35S3 35T • PHIN BLW34 P H ILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear u.h.f. am plifiers fo r television transmitters and transposers. The excellent d.c. dissipation properties fo r class-A operation

philips ferroxcube 4c6

Abstract: ferroxcube 4322 020 97171 68w transistor transistor 68W MCA264 choke marking nb 03 FERROXCUBE 4330 BLF175 ferroxcube 4322 M11 marking transistor
Contextual Info: Philips Semiconductors Product specification HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES 7 ^ 3 1 -// SbE D I 7110Û2L BLF175 DGM3712 2Ô2 « P H I N PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control

transistor tt 2222

Abstract: TT 2222 enamelled copper wire tables 2222 123 capacitor philips pu enamelled copper wire TL 2222 4312 020 36640 ferroxcube wideband hf choke 22 nF, 63 SOT123 Package
Contextual Info: Philips Semiconductors Product specification HF power MOS transistor PHILIPS T -3 ^ -// INTERNATIONAL FEATURES 5bE D I 711002b DOMBbTM BLF145 437 IPHIN PIN CONFIGURATION • High power gain • Low noise figure • Good thermal stability • Withstands full load mismatch.

3SK181

Contextual Info: SANYO S E M I C O N D U C T O R S3 E D CORP 7117071, O G O t T 0 4 2 T-3I-ZS 3SK181 * N-Channel Enhancement M OS Silicon FET Dual Gate 2046 High-Frequency General-Purpose Amp Applications 2130A Applications . FM tuners and VH F tuners Features . • . .

BLW50F

Abstract: PHILIPS 4312 amplifier
Contextual Info: bSE I m 711Dfi5b 0Db35M0 43^ H P H I N BLW50F PHILIPS INTERNATIONAL H.F./V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, A B and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides

2n4427

Abstract: 2N3866 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640
Contextual Info: b5E D 711Dfl2b 00L3b7fl CHG • PHIN 2N3866 2N4427 PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits.

tda8466

Abstract: TDA8451A CCD matrix TDA8391 matrix CCD "SECAM Decoder" analog delay line ccd NF24Q100 p2ccd TDA8451
Contextual Info: D E V E L O P M E N T DATA This data sheet contains advance information and specifications are subject to change w ithout notice. PHILIPS INTERNATIONAL SbE D 7110A5L 003b1b7~T5s' IPHIN P CCD DELAY LINE AND MATRIX G E N E R A L D E S C R IP T IO N The T D A 8 4 5 1 A is an integrated P2C C D Profiled Peristaltic Charge Coupled Device delay line and

marking code 7Gs

Abstract: 3 DG 1008 BLF147 71005 philips resistor 2322-153 SOT121 Package
Contextual Info: Product «pacification Philips Semiconductor» T -J ^ ~ /5 B L F 1 4 7 VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • 5bE D • 711Dfl2b 0DM3703 27T BIPHIN PIN CONFIGURATION High power gain Low intermodulation distortion Easy power control

SOT123 Package

Abstract: SOT123 BLF244 International Power Sources SOT-123
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability