NF 711 Search Results

Contextual Info: 2SC5490A Ordering number : ENA1091A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5490A UHF to S-Band Low-Noise Amplifier Applications Features • • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)

a1091 transistor

Contextual Info: Ordering number : ENA1091A 2SC5490A RF Transistor 10V, 30mA, fT=8GHz, NPN Single SSFP http://onsemi.com Features • • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ

Contextual Info: RECEIVED MAY 61991 DOCUMENTS CONTROL R E\¿¿IO N ¿ DESCRIPTION LETTER NO NOTES: 1. DISSIPATION FACTOR: .005 MAX @ 25* C, 1 KHZ. 2. CAPACITANCE: .9 NF-1.1 NF. 3. DIELECTRIC WITHSTANDING VOLTAGE: 20 KV WORKING, 24 KV PRO CESS FOR 2 HOURS O 100* C AND 28 KV PROOF FOR 5 SECS.

BAT151

Contextual Info: BAT15-110D SILICON LOW BARRIER SCHOTTKY DIODE DESCRIPTION: The ASI BAT15-110D is a silicon low barrier Schottky diode, Designed for use in Doublers and Modulators. PACKAGE STYLE 711 FEATURES INCLUDE: • Low RS • Low NF MAXIMUM RATINGS VR 4.0 V IF 50 mA

Hitachi DSA002783

Contextual Info: 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711B Z 3rd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)

3SK321

Abstract: marking 4r Hitachi DSA00240
Contextual Info: 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711A Z 2nd. Edition Dec. 1998 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)

sot143 marking code G2

Abstract: Hitachi DSA001652
Contextual Info: 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711A Z 2nd. Edition Dec. 1998 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)

Contextual Info: 2SC5536A Ordering number : ENA1092A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5536A VHF Low-Noise Amplifier, OSC Applications Features • • • • Low-noise : NF=1.8dB typ f=150MHz 2 High gain : ⏐S21e⏐ =16dB typ (f=150MHz)

Contextual Info: TOSHIBA 2SC5263 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : Gain = lldB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SC5263

Contextual Info: TOSHIBA 2SC5263 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : Gain = lldB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: Ordering number : ENA1092A 2SC5536A RF Transistor 12V, 50mA, fT=1.7GHz, NPN Single SSFP http://onsemi.com Features • • • • Low-noise : NF=1.8dB typ f=150MHz 2 High gain : ⏐S21e⏐ =16dB typ (f=150MHz) Ultrasmall, slim flat-lead package (1.4mmx0.8mm×0.6mm)

Contextual Info: 2SC5488A Ordering number : ENA1089A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5488A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz)

KSK30

Abstract: 100K0 20H2
Contextual Info: SAMSUNG SEMICONDUCTOR INC^ KSK30 IME D §711^142 □OGb'HB | *P* SILICON N-CHANNEL JUNCJION FET LOW NOISE PRE-AMP. USE High Input Impedance: l,„= 1nA MAX Low Noise: NF=0.5dB (TYP) High Voltage: Vga, = -5 0 V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic

900mhz frequency generator

Abstract: BV 9y transistor VHF Transceiver IC NE5200D rf transmitter receiver 900Mhz A5200 NE5200 SA5200D RF Radio frequency IC, 8pin 900M Wideband Amplifier
Contextual Info: Product Specification Philips Sem iconductors NE/SA5200 RF dual gain-stage DESCRIPTION FEATURES The NE/SA5200 is a dual amplifier with DC to 1200MHz response. Low noise NF = 3.6dB makes this part ideal for RF front-ends, and a simple power-down mode saves current for

FMM5702X

Abstract: FMM5702
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

874 561 0 4V

Abstract: FMM5702 FMM5702X FUJITSU MMIC LNA
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

FMM5702

Abstract: FMM5702X 34500 544 mmic 2732G NF 936
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

874 561 0 4V

Abstract: FMM5702X FMM5702
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

A1089

Contextual Info: Ordering number : ENA1089A 2SC5488A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single SSFP Features • • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Ultrasmall, slim flat-lead package (1.4mmx0.8mm×0.6mm)

Contextual Info: MOTOROLA Order th is docum ent by MHW8272/D SEMICONDUCTOR TECHNICAL DATA The RF Line 128-C hannel 860 MHz CATV Line Extender A m plifier • Specified for 128-Channel Performance • Broadband Power Gain — Gp = 27 dB (Typ) • Broadband Noise Figure NF = 6 dB (Typ) @ 860 MHz

I12C

Abstract: KSC2758 samsung tuner
Contextual Info: SAMSUNG SEM ICON D UCTOR . INC KSC2758 14E D | T 'lb M m a OOObTSS fl | NPN EPITAXIAL SILICO N TRANSISTOR ' RF. MIXER FOR UHF TUNER T-31-15 SO T-23 • HIGH POWER GAIN TYP. 17d8 • LOW NF TYP. 2.8dB ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Colector-Base Voltage

063 793

Abstract: transistor v63
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain

NEC K 2500

Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz

2SC4915

Abstract: MJE 131
Contextual Info: 2SC4915 SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC4915 1 2 3 CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LC 6 1 CC 1 3 CBC 1 2 Q1 6 5 + AREA = .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM + RE +