NF 41 Search Results

TRANSISTOR C 4460

Abstract: AT-41533 544 code marking amplifier zo 103 ma AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E
Contextual Info: General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and

transistor Bc 540

Abstract: tfk 540 TFK 212 TRANSISTOR BC 212 bc 212 BC212 BC 540 TRANSISTOR
Contextual Info: SHi2:ium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and driver stages Besondere Merkmale: Features: • • • • Verlustleistung 300 mW • In G ruppen so rtie rt

IC 431

Abstract: 2SC5277A SANYO DC 303 ITR08213 ITR08215 ITR08216 ITR08217 120d-22
Contextual Info: 2SC5277A Ordering number : ENA1075 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).

Contextual Info: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)

transistor c331

Abstract: scw 61 ST CD C331 BCX70 C331 c331 transistor ZES1 za sot23 ST CD C333 st c332
Contextual Info: BCW 60 BCX 70 IMPN-Transistoren für NF-Vorstufen und Schalteranwendung BCW 60 und BCX 70 sind epitaktische NPN-Silizium-Planar-Transistoren mit Plastikum­ hüllung 23 A 3 DIN 41 869 SO T-23 für NF-Vorstufen und Schalteranwendungen. Sie eignen sich besonders für Dick- und Dünnfilmschaltungen. Beide Typen BCW 60 und

Contextual Info: D1 Non resettable fuses www.schurter.com/pg01_2 Miniature Fuse, 5 x 20 mm, Quick-Acting F, NF, 220 VAC NF C 93-435 • 220 VAC · Quick-Acting F Description Weblinks - Low Breaking Capacity pdf-datasheet, html-datasheet, General Product Information, Approvals,

HA21 fuse

Abstract: HA21
Contextual Info: D1 Non resettable fuses www.schurter.com/pg01_2 Miniature Fuse, 5 x 20 mm, Quick-Acting F, NF, 220 VAC NF C 93-435 • 220 VAC · Quick-Acting F Description Weblinks - Low Breaking Capacity pdf, html, General Product Information, Approvals, RoHS, CHINA-RoHS,

HA21 fuse

Abstract: HA21 7010-3630
Contextual Info: D1 Non resettable fuses www.schurter.com/pg01_2 Miniature Fuse, 5 x 20 mm, Quick-Acting F, NF, 220 VAC NF C 93-435 • 220 VAC · Quick-Acting F Description References Weblinks - Low Breaking Capacity Standards General Product Information, Approvals, RoHS, CHINA-RoHS, e-Store,

fe 5571

Abstract: KS 0302
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low N oise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 m A, f = 2 G H z • NF = 1.3 dB

nec 13772

Abstract: transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PAC KAG E DIMENSIONS • Low noise • NF = 1.3 dB ty p . @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB ty p

NE3505M04

Abstract: FL-240 NEC Ga FET marking L NE3505M04-T2 ne3505
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3505M04 L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz Reference Only

RV 7010

Abstract: HA21
Contextual Info: INDEX BY TYPES | INDEX BY ORDER NUMBERS NON RESETTABLE FUSES D1 NF C 93-435 • 220 VAC · Quick-Acting F Describtion References - Low Breaking Capacity General Product Information Time-Current Curves see last page Standards - NF C 93-435 - Model HA21 - Qualification Approval Certificate of Quality CCQ

fr 309

Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
Contextual Info: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen

transistors ON 4673

Abstract: NE685 NE68530 NE856 NE85630 S21E UPA832TF UPA835TF UPA835TF-T1 pin IC 7479
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA Package Outline TS06 (Top View) 2.1 ± 0.1 Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA

HFET-2201

Abstract: sealectro Adams-Russell hewlett packard application bulletin 73 HFET2201 10GH IS211 8542B sealectro 52 111 HPAC
Contextual Info: H E W L E T T ^ PACKARD COMPONENTS LOW NOISE BROADBAND MICROWAVE GaAS FET HFET-2201 Features LOW NOISE FIGURE 2.4 dB Typical NF at 10 GHz 3.1 dB Typical NF at 14 GHz HIGH MAXIMUM AVAILABLE GAIN 14.5 dB Typical Ga max at 10 GHz HIGH OUTPUT POWER 12 dBm Linear Power at 10 GHz

OF IC 7912

Abstract: pt 9795 on 5295 transistor nec 14312 transistor UPA831TF lb 11885 NE681 NE68130 NE856 S21E
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Package Outline TS06 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA

pt 6964

Abstract: UPA833TF MJE 13031 NE685 NE68530 NE688 NE68830 S21E UPA833TF-T1 UPA836TF
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm Package Outline TS06 (Top View) LOW NOISE: Q1:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA

ic 731 1624

Abstract: 2SC5184 transistors ON 4673
Contextual Info: DATA SHEET SILICON TRANSISTOR µPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz 2.1±0.1 NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz

PA1219

Contextual Info: PA1219 1800-2000 MHz. Low Noise High Dynamic Range Linear Amplifier PRELIMINARY Features typical values Low Cost Ceramic Surface Mount Package Typical NF . 1.1 dB. IP3 . +40 dBm

Contextual Info: FSC60ML - GeneralPurpose GaAs FET FEATURES • Low Noise Figure: NF=0.8dB Typ. @ f=4GHz • High Associated Gain: Gas=11dB (Typ.) @ f=4GHz • Small Size: 6 pin Plastic Package for SMT Applications.

TRANSISTOR BC 413

Abstract: TFK 101 TFK 902 transistor bc 102 TFK 413 BC413 414 transistor TRANSISTOR BC 413 npn TRANSISTOR BC 414 TFK 102
Contextual Info: BC 413 - BC 414 Silizium-NPN-Epitaxial -Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: Rauscharm e Vorstufen Applications: Low noise pre stages Besondere Merkmale: Features: • Rauschmaß < 3 dB • Noise figure < 3 d B • In Gruppen so rtie rt

BD203

Abstract: bd204 BD201 BD 203 BD 201 transistors b0203 BD 202 transistors THP1
Contextual Info: BD 201 - BD 203 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: Features: • Hohe Spitzenleistung • High peak power • Hohe Stromverstärkung

ALH140C

Abstract: UM 3842 MN1400
Contextual Info: TRYw Ka-Band HEMT Low-Noise Amplifier ALH140C Features • RF Frequency: 24 to 41 GHz • Linear gain: 12 dB • NF: 4dB • Unconditionally stable • Balanced design provides excellent input and output VSWR • Biasable from either side of chip • PldB: 15 dB

rc21u

Contextual Info: RCMM Vishay Sfernice Molded Metal Film Resistors FEATURES • • • • • • 0.25 W to 1 W at 70 °C NF C 83-230 RC21U-31U-41U-32 CECC 40 100 High insulation >107 MΩ Excellent reliability Great mechanical strength DIMENSIONS in millimeters 25 min.