NF 022 Search Results

Contextual Info: Entstörkondensatoren EMI Suppression Capacitors •*l LS t Y2-Kondensatoren/Y2 capacitors B81122 10 1,0 nF 4,0 X 9 ,0x13,0 t 5 nF 40% y 0 > 13 0 2,2 nF 5 ,0 x 11,Ox 13,0 nF 4,7 nF 6,0 X 12,0 X 13,0 i - ö x t s o x 3 0 6,8 nF 6,0 X 12,0 X 13,0 15 10 nF *5x110x160

907-003

Contextual Info: Box Mount Receptacle with PC Tail Contacts Shell Size See Table Basic Part Number 907-003 - NF Connectors/Accessories Comm Equiv 28840 907-003 Glenair MIL-DTL-28840 Commercial Equivalent Key Position 25 - P 1 Finish Contact Style NF - Olive Drab Cadmium / Nickel

Contextual Info: Box Mount Receptacle with PC Tail Contacts Shell Size See Table Basic Part Number 907-003 - NF Connectors/Accessories Comm Equiv 28840 907-003 Glenair MIL-DTL-28840 Commercial Equivalent Key Position 25 - P 1 Finish Contact Style NF - Olive Drab Cadmium / Nickel

907-037

Contextual Info: Connectors/Accessories Comm Equiv 28840 907-037 Glenair MIL-DTL-28840 Commercial Equivalent Box Mount Receptacle with PC Tail Contacts Shell Size See Table Basic Part Number 907-037 - NF Key Position 25 - S 1 Finish Contact Style NF - Olive Drab Cadmium / Nickel

Contextual Info: D38999 Type USB Connectors 233-342 USB SuperSeal D38999 Series III Type Receptacles USB 2.0 Type A Receptacle to PC Tail Termination • Size 15 Basic Number 233-342 Connector Style See Below NF 00 15 Finish NF = Cadmium Olive Drab M = Electroless Nickel

1N23C diode

Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
Contextual Info: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure

907-037

Contextual Info: MIL-DTL 28840 907-037 Glenair MIL-DTL-28840 Commercial Equivalent Box Mount Receptacle with PC Tail Contacts Shell Size See Table Basic Part Number 907-037 - NF Key Position 25 - S 1 Finish Contact Style NF - Olive Drab Cadmium / Nickel S - Socket Contacts / PC Tail

907-003

Contextual Info: MIL-DTL 28840 907-003 Glenair MIL-DTL-28840 Commercial Equivalent Box Mount Receptacle with PC Tail Contacts Basic Part Number Key Position Shell Size See Table 907-003 - NF 25 - P 1 Finish Contact Style NF - Olive Drab Cadmium / Nickel P - Pin Contacts / PC Tail

HFET-2201

Abstract: sealectro Adams-Russell hewlett packard application bulletin 73 HFET2201 10GH IS211 8542B sealectro 52 111 HPAC
Contextual Info: H E W L E T T ^ PACKARD COMPONENTS LOW NOISE BROADBAND MICROWAVE GaAS FET HFET-2201 Features LOW NOISE FIGURE 2.4 dB Typical NF at 10 GHz 3.1 dB Typical NF at 14 GHz HIGH MAXIMUM AVAILABLE GAIN 14.5 dB Typical Ga max at 10 GHz HIGH OUTPUT POWER 12 dBm Linear Power at 10 GHz

2sk991

Abstract: 2SK9 ASGA 2sk99
Contextual Info: MOS M O S Field Effect P ow er Transistor N - ^ * ; i " N or7— M O S FET I i f f l mm 2SK991 ii, Nf-^*;w^i?'"o,7- M 0 S FET T*. 5 V * « * I C <nf t * tw J : & i £ K ï f t * * » T f é ì ' M x ^ y f > ^ x T O : mm t t . 4.8 MAX. -1.3±0.2 y t '/ ' f

630-022

Contextual Info: FeedThroughs 630-022 Feed-Through Fittings Banding Adapter RFI/EMI Environmental Fitting Type A - Rear Mount B - Front Mount C - Flange Mount Finish See Table II, Page D-3 Dash Number See Table III Basic Part Number Product Series 630 A 022 NF RFI/EMI Environmental

eec-f5r5u333

Contextual Info: Electric Double Layer Capacitors “Gold” Capacitor NF Series Features • IC memory back-up device nA range load • Large capacitance for long time back-up • General purpose • 5mm terminal spacing Specifications Item Performance Characteristics Operating Temperature Range

NE33284AS

Abstract: NE33284A NE33284A-SL NE33284A-T1 MODEL 536
Contextual Info: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:

Contextual Info: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω

Contextual Info: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω

FUJITSU MMIC LNA

Abstract: FUJITSU LNA
Contextual Info: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω

FMM5702

Abstract: FMM5702X 34500 544 mmic 2732G NF 936
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

874 561 0 4V

Abstract: FMM5702X FMM5702
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

Contextual Info: D38999 Type USB Connectors 233-342 SuperSeal MIL-DTL-38999 Series III Type Receptacles USB 2.0/3.0 Type A or B Receptacle to PC Tail Termination • Size 15 Basic Number 233-342 USB Performance 2 = 2.0 3 = 3.0 Connector Style See Below NF 00 - 15 Finish

Contextual Info: COMPONENT RESEARCH CO I bSE D • 5303^11 00DQ70? OTT ^ 1 2 Component Research METALLIZED POLYCARBONATE CAPACITOR J- f l- t S PRODUCT FEATURES { 7 i" y 1.0 /nF 30VDC ACTUAL SIZE CAPACITOR QUALIFIED TO MIL-C-83421/01 FAILURE RATE S. HERMETICALLY SEALED, HIGH RELIABILITY SCREENED FOR CRITICAL AEROSPACE APPLICATIONS.

SA 848

Contextual Info: ALH209C Low-Noise Amplifier GaAs Telecom Products Features • RF frequency: 37-43 GHz • Linear gain: 16 dB • NF: 3.0 dB • PldB: 15 dBm • DC power: 4 Vdc at 50 mA Description and Applications The ALH209C is a broadband three-stage, compact, low-noise monolithic HEMT amplifier designed for

MD58-0005

Contextual Info: Preliminary Specifications Integrated Transceiver 2.1 - 2.7 GHz MD58-0005 V1.A Features ● ● ● ● ● ● ● ● ● SSOP-28 Fully Integrated Transmit and Receive Functions Operates Over +3 V to +5 V Supply Low 22 mA Receive Current Gain = 15 dB High Receiver Dynamic Range (IIP3 = -2 dBm, SSB NF = 4dB)

Contextual Info: W haì HEWLETT WL'EM PACKARD Silicon Bipolar RFIC Amplifiers Technical Data MSA-20XX Series Features MSA-2011 M SA -2011 • Surface Mount SOT-143 Package • 3 dB Bandwidth: DC to 1.0 GHz • 16.2 dB Gain at 1 GHz • 4.3 dB NF at 1 GHz MSA-2035 M SA -2035

NEC K 2500

Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz