NEW ENGLAND MICROWAVE Search Results

93051

Abstract: 622M010 625M010 LTDT
Contextual Info: NEW ENGLAND MICROWAVE 7fl N0 Ì \ D E | bShB403 DOODllD 3 | TS"/'// D new en d w iD m ic ro w n j€ c o rp o ra tio n 1-18 GHZ LOW TRANSIENT SPDT SWITCHES MODELS 622M010/625M010 r v I •4 +r ISOLATION FEATURES • 1-18 GHz Frequency Range in a Single Unit

Frequency Generator 1MHz

Abstract: step recovery diode New England Microwave NE12003
Contextual Info: 6563403 NEW ENGLAND MICROWAVE. . bh ' 66C 00087 DE | b S b 3 4 Q 3 0DD0DÛ7 I T ^ o n -iS 1 NÉW ÉNGLM1D MICROWWe CORPORATION 26 HAMPSHIRE DRIVE, HUDSON, NEW HAMPSHIRE 03051 603 883-2900 STEP RECOVERY AND MULTIPLIER DIODES NE12000 The NE12000 step recovery and multiplier diodes are epitaxial silicon varactors which achieve high

New England Microwave

Contextual Info: NEW ENGLAND MICROWAVE 7fl N0l\ D e | hSb34D3 D O D D 115 7 J “ ' M€W€MGLN1D MICROWKI€ CORPORWIOli MINIATURE SP3T SWITCHES ISOLATION FEATURES • Hermetic, meeting MIL-STD 883, Method 1014, Condition A • Miniature, compact design 70 50 • Large choice of package styles

ltkd

Abstract: F207 RTT4 20T60 400C
Contextual Info: NEU ENGLAND MICROWAVE bt, D E '! b 5 b 3 4 ü 3 □□00G7E □ ' T-&Q.2! New Product Bulletin PIN SWITCH DRIVERS • High-speed switching of PIN diodes, le ss than 10 nanoseconds • Useful for switching rates to 10 MHZ • Choice of lo g ic , for inverting or

New England Microwave

Abstract: nem 6500 pj 37
Contextual Info: NEU ENGLAND IICROUAVE bb D e | h5ti34Q3 DODDObB ‘i New Product Bulletin ' T 'S l'- i / SPST DROP-IN MODULE SERIES 6500, INTEGRAL ECL FEATURES I Ultra-High-Speed; Rise Time less than 1 nanosecond: Compact, Miniaturized; 1.000 x .650 x .130 Reliable Thin-Film design,

pj 37

Abstract: PJ37 New England Microwave
Contextual Info: NEU ENGLAND IICROUAVE bb D e | h5ti34Q3 DODDObB ‘i New Product Bulletin ' T 'S l'- i / SPST DROP-IN MODULE SERIES 6500, INTEGRAL ECL FEATURES I Ultra-High-Speed; Rise Time less than 1 nanosecond: Compact, Miniaturized; 1.000 x .650 x .130 Reliable Thin-Film design,

code J4 diode

Abstract: RF E4
Contextual Info: NEW ENGLAND MICROWAVE 7fl D e | hSb34D3 D0DD115 7 D 7^5“/-// N0a/ CriGL^MD M OO W NIG CORPORATION ISOLATION FEATURES • Hermetic, meeting MIL-STD 883, Method 1014, Condition A • Miniature, compact design 70 50 • Large choice of package styles • Switching speeds down to 3 nanoseconds rise time

New England Microwave

Abstract: E6 DIODE E8 55A DIODE RF E4 code J4 diode
Contextual Info: NEW ENGLAND MICROWAVE 7fl D e | hSb34D3 D0DD115 7 D 7^5“/-// N0a/ CriGL^MD M OO W NIG CORPORATION ISOLATION FEATURES • Hermetic, meeting MIL-STD 883, Method 1014, Condition A • Miniature, compact design 70 50 • Large choice of package styles • Switching speeds down to 3 nanoseconds rise time

NE11302

Abstract: 50MHZ NE11301 NE11303 NE11304 NE11305 NE11306 NE11307 NE11308 Cj451
Contextual Info: 6563403 NEW ENGLAND MICROWAVE 66 C 00088 bb D Ë J b 5 L ,3 4 0 3 D □□ □□ O fifl 7 ^ 0 7 - /^ 3 I MÇW dNGLhND NICROWm€ CORPORATION 26 HAMPSHIRE DRIVE, HUDSON, NEW HAMPSHIRE 03051 603 883-2900 30 VOLT SILICON TUNING VARACTORS N E11300 The N E 1 1 3 0 0 tuning varactors are silicon abrupt junction devices. They offer the highest Q and low­

NE14201

Abstract: NE14202 NE14203 NE14204 NE14205 NE14206 NE14207 NE14208 NE14209
Contextual Info: 6563403 NEW ENGLAND MICROWAVE _ ' ' '66C 00085 bb DE | b S t i 3 4 0 3 OOOODflS fl | ~ N€W <ENGLmD MICROWme CORPORATION 2 6 H A M P S H IR E D R IV E , H U D S O N , N E W H A M P S H IR E 0 3 0 5 1 6 0 3 8 8 3 - 2 9 0 0 HIGH VOLTAGE P IN /N IP DIODES

"RF diode"

Abstract: 1N4148 230CC F-05 solid state RF HIGH-POWER SWITCH diode t29 1n4148 high speed solid state diode
Contextual Info: NEliJ ENGLAND MICROWAVE Tb D e J b S t , 34 D 3 O O Q O I S T S f ' 'T-SZ-Z! DRIVERS DEFINED m S im Sill A driver is an interface between digital circuitry TTL, ECL, etc. and solid state RF/m icrowave switch circuitry. The switch usually consists of PIN/NIP diodes or Field Effect

solid state RF HIGH-POWER SWITCH

Abstract: 1N4148 230CC F-05 TS2Z 1n4148 high speed solid state diode
Contextual Info: NEliJ ENGLAND MICROWAVE Tb D e J bS t,3 4 D3 OOQOIST S f' 'T-SZ-Z! DRIVER S D EFIN ED m S im Sill A driver is an interface between digital circu itry TTL, ECL, etc. and solid state R F /m icro w a v e sw itch circuitry. The sw itch usually co n sists o f PIN /N IP diodes o r Field Effect

NEMC1987

Contextual Info: NEU ENGLAND MICROQJAVE Tb 7 ^ 5 7 -// D E | bSb34D3 00Q01 20 h | ~ D h€W GIGLhND MOOW &VK CORPORATION SPDT UHF SWITCH MODEL 6466 ' 100 MHz to 1.5 GHz Frequency Range .375 inch square package, .125 thickness integral TTL compatible Driver SP2T toggle configuration

Adams-Russell

Contextual Info: Distributors SOUTHEAST Precision Components P.O. Box 9258 Coral Springs, FL 33075 TEL: 305-344-4274 FAX: 305-753-4107 SOUTHERN CALIFORNIA L & M Components 8939 S. Sepulveda Blvd. Suite 104 Los Angeles, CA 90045 TEL: 213-417-3044 FAX: 213-417-3470 NORTHERN CALIFORNIA

s- band Waveguide limiter

Abstract: AEROFLEX Attenuators microwave transceiver MIL-STD-1553 cable connector Aeroflex KDI Resistor SURFACE MOUNT DIODES MIL GRADE GaAs tunnel diode GSM BTS antenna Ferrite Circulators at 15 ghz tunnel diode GaAs
Contextual Info: RF & Microwave Devices Components RF Modules & Subsystems Capabilities Brochure Microelectronic Solutions – RFMW 2006 R F & M O D U L E S S U B S Y S T E M S C O M P O N E N T S D E V I C E S P E R F O R M A N C E Aeroflex is a world leader in the design, manufacture

Contextual Info: UNITED STATES INTERNATIONAL NEW ENG LAND/ KANSAS/MISSOURI/ AUSTRALIA JAPAN UPSTATE NEW Y ORK NEBRASKA Advanced Technology Marketing Tel: 508 458-0200 Fax: (508) 458-7990 Central Tech Sales Tel: (314) 831-4069 Fax: (314) 839-4686 Electronic Development Sales Pty.,

Diode LT 228

Abstract: spdt toggle switch application NEM01987
Contextual Info: f NEU ENGLAND MICR OWAV E Tt D E | bSb34D3 00Q01 20 h | ~ D 7^57-// n€w «nglnid micrownjc corporation SPDT UHF SWITCH MODEL 6466 ISOLATION FEATURES • • • • • • 100 MHz to 1.5 GHz Frequency Range .375 inch square package, .125 thickness integral TTL compatible Driver

COFDM

Contextual Info: Digital Microwave L-Band Linear RF Amplifier COFDM - Video, Audio Telemetry and IP Products July 2010 Data Sheet The most important thing we build is trust The Cobham Digital RF amplifiers bring a new level of performance and reliability to microwave transmission of digitally modulated video. The linear

ALT-4975-C

Contextual Info: Passive & Control Components Equipment and Components for the RF & Microwave Industry Active Components Oscillators www.AtlanTecRF.com Connectors, Cable and Cable Assemblies Noise Generators Satellite Communications Equipment Custom Equipment Sub-Assemblies

Ferrite Circulators at 15 ghz

Abstract: medical ultra micro coaxial cable Aeroflex KDI Resistor military resistors catalog MIL-STD-1553 cable connector KDI attenuator SURFACE MOUNT DIODES MIL GRADE kdi mixer analog phase shifters chip gsm multicoupler
Contextual Info: ned by three tured above: mer-focused. hts reserved. me021r1_Aeroflex Micro. Bro.qxd 5/17/06 4:00 PM Page 1 RF & Microwave Devices Components RF Modules & Subsystems Capabilities Brochure Microelectronic Solutions – RFMW 2006 me021r1_Aeroflex Micro. Bro.qxd

Contextual Info: New Bedford Facility Aerovox is a leading m anufacturer of film, paper, and alum inum electrolytic capacitors. The Com pany sells its products w orldw ide, principally to original equipm ent manufacturers O E M s for use as com ponents in electrical and electronic

Contextual Info: MICRONET'ICS INC 34E D t.111742 G Q 0 G 3 S eJ 5 IMR < > T ' S Z * \ New Product Bulletin PIN SWITCH DRIVERS High-speed switching of PIN diodes, less than 10 nanoseconds Useful for switching rates to 10 MHZ t Choice of logic, for inverting or non-inverting operation

Contextual Info: A _ i m F » AM PM OOU Wire Lock Connectors Catalog 29 6 112 Revised 3-97 Prod uct Facts • One piece, thru-hole, “ poke home” wire-to-board con­ nector offers fast and easy wire termination. ■ Single row, right-angle and vertical configurations avail­

Contextual Info: O rd e r this data sheet by M R F10150H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10150H’ Microwave Pulse Power Transistor 150 Watts Peak NPN 1025-1150 MHz CPT0 Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz