NEC VT 575 Search Results

PB6350

Abstract: ECL-10KH 208PGA L100K BA17T
Contextual Info: N E c ELECTRONICS INC bM27SaS 0011677 D J~~ 6427525 N E C ELECTRONICS INC 91D 11877 D T-42-IH3 E C L -3 A b ip o la r g a te a r r a y s NEC Electronics Inc. PRELIM INARY INFORMATION June 1987 D escription Features The E C L-3 A series consists of two ultra-high-speed

2SK736

Contextual Info: _ 525 N E C N E C ELECTRONICS INC EL EC TR ONI CS /j INC_ 98D 18908 D Tfi D e | ^ 57555 □□IflTOfl ñ N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK736 DESCRIPTION FEA TU R ES The 2SK736 is N-Channel MOS Field Effect Power Transistor

44-PIN

Abstract: HS350 VP215 6 GHZ nec
Contextual Info: DATA SHEET BIPOLAR ANALOG + DIGITAL INTEGRATED CIRCUIT µPB1009K REFERENCE FREQUENCY 16.368/16.384/19.2/14.4/26 MHz, 2ndIF FREQUENCY 4.092/2.556 MHz RF/IF FREQUENCY DOWN-CONVERTER + PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER DESCRIPTION The µPB1009K is a silicon monolithic IC developed for GPS receivers. This IC integrates a full VCO, second IF

nec vt 575

Contextual Info: DATA SHEET BIPOLAR ANALOG + DIGITAL INTEGRATED CIRCUIT µPB1009K REFERENCE FREQUENCY 16.368/16.384/19.2/14.4/26 MHz, 2ndIF FREQUENCY 4.092/2.556 MHz RF/IF FREQUENCY DOWN-CONVERTER + PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER DESCRIPTION The µPB1009K is a silicon monolithic IC developed for GPS receivers. This IC integrates a full VCO, second IF

receiver IC 14 MHz

Abstract: 44-PIN HS350 VP215
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HS350

Abstract: NE696M01 VP215 K3140
Contextual Info: DATA SHEET BIPOLAR ANALOG + DIGITAL INTEGRATED CIRCUIT µPB1008K REFERENCE FREQUENCY 27.456 MHz, 2ndIF FREQUENCY 132 kHz RF/IF FREQUENCY DOWN-CONVERTER + PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER DESCRIPTION The µPB1008K is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion

dd417

Contextual Info: 'd a t a b427525 GÜM17SE ST2 « N E C E NEC sh eet MOS INTEGRATED CIRCUIT f juPD42S4260L, 424260L 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The /¿PD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs with optional fast page mode

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ELECTRON DEVICE UPD3733 2088-BIT CCD LINEAR IMAGE SENSOR WITH PERIPHERAL CIRCUIT . The pPD3733 is a 2088-bit high sensitivity CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal.

HS350

Abstract: NE696M01 VP215 K3140
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CA726 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CA726 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 64M

Contextual Info: P R E LIM IN A R Y DATA S H E E T NEC MOS INTEGRATED CIRCUIT MC-422000LAB72F 3.3 V OPERATION 2M -WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-422000LAB72F is a 2 097 152 words by 72 bits dynamic RAM module on which 9 pieces of 16M DRAM ( /xPD 4217800L) are assembled.

d5205g

Contextual Info: DATA SHEET NEC / ELECTRON DEVICE MOS INTEGRATED C IR C U IT / ¿ ¿ P D 5 2 5 C M O S ANALOG M ULTIPLEXER DESCRIPTION The ¿¿PD5205 is 8-channel C-MQS analog m u ltip le x e r. A single-pole 8-position m ode and double-pole 4-position m ode are settable by 8 /4 te rm in a l.

Contextual Info: DATA SHEET M O S INTEGRATED CIRCUIT MC-42S2000LAB32S SERIES 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The M C -4 2S2000LA B 32S series is a 2,097,152 w ords by 32 bits dynamic R A M m odule (Small Outline D IM M ) on which 4 pieces of 16 M DRA M : iiPD42S17800L are assembled.

Contextual Info: PRELIM IN A RY DATA SH EET MOS INTEGRATED CIRCUIT mPD42S18165L, 4218165L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/W RITE MODE Description The /iPD42S18165L, 4218165L are 1 048576 words by 16 bits CMOS dynam ic RAM s w ith optional hyper page

NEC C1875

Abstract: UPC1875CT UPC1875 L427S2
Contextual Info: PRELIMINARY DATA SHEET NEC BIPOLAR ANALOG INTEGRATED C IR C U IT • ELECTRON DEVICE b4E752S 004^3*15 ÔÔ3 « N E C E ju PC1875 STEREO-ONLY US MTS DECODER The ¿iPC1875 is an LSI used for stereo-only US MTS Multi Channel Television Sound . The ¿/PC1875 includesall functions

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4264800, 4265800 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The /¡P D 42 6480 0,4265800 are 8,388,608 words by 8 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

424800-70

Abstract: 42s4800 2716D nec 42s4800 UPD 552 C 424800-80 NEC D 553 C 574 nec uPD424800 nec 2716d
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / ¿¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The J2PD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The ¿iPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

MC-458CA727

Abstract: MC-458CA727EFA-A75 MC-458CA727PFA-A75 PD45128163
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA727 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-458CA727EFA and MC-458CA727PFA are 8,388,608 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 128M SDRAM : µPD45128163 are assembled.

Contextual Info: DATA SHEET M O S INTEGRATED CIRCUIT /1PD42S4800, 424800 4 M-BIT DYNAM IC RAM 512 K-WORD BY 8-BIT, FA ST PAGE M ODE Description The /¿PD42S4800, 424800 are 524,288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CA726 4M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CA726 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 64M

nec A2C

Abstract: kmxx nec vt 575
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ / ¿ P D 4 2 1 1 6 5 1 M-BIT DYNAMIC RAM 64K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D escription The î î PD421165 is a 65,536 words by 16 bits CMOS dynamic RAM with optional hyper page mode (EDO).

nec A2C

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ ¿ ¿ P P 421165 1 M-BIT DYNAMIC RAM 64K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The ¿¿PD421165 is a 65,536 words by 16 bits CMOS dynamic RAM with optional hyper page mode (EDO).

Contextual Info: I • b 4 2 7 5 5 5 D O M l ^ 5 7 b M N E C E À T A NEC S H E E T MOS INTEGRATED CIRCUIT /¿PD42S4900, 424900 4 M BIT DYNAMIC RAM 512 K-WORD BY 9-BIT, FAST PAGE MODE DESCRIPTION ★ The /iPD42S4900, 424900 are 524 288 w ords by 9 bits dynam ic CMOS RAMs. The fast page m ode cap ab ility