NEC UPD44164182 Search Results
NEC UPD44164182 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
|
Original |
||
EF25
Abstract: semiconductor quality assurance office organization samsung ddr 72M-Bit 1M x 72
|
Original |
G0706 M16000EJHV0SG00 EF25 semiconductor quality assurance office organization samsung ddr 72M-Bit 1M x 72 | |
UPD44164185F5-E60-EQ1
Abstract: UPD44165362F5-E60-EQ1 UPD444016LG5-A12-7JF UPD4482161GF-A85 UPD44325094F5-E33-EQ2 uPD431232ALGF-A10 uPD431232ALGF-A12 uPD431232ALGF-A7 uPD431232ALGF-A8 uPD431532LGF-A10
|
Original |
uPD4382321GF-A85 GS880F32BT-7 uPD4382321GF-A90 uPD4382322GF-A67 GS88032BT-200 UPD4311231LGF-A7 GS81032AT-5 uPD4382322GF-A75 GS88032BT-150 UPD44164185F5-E60-EQ1 UPD44165362F5-E60-EQ1 UPD444016LG5-A12-7JF UPD4482161GF-A85 UPD44325094F5-E33-EQ2 uPD431232ALGF-A10 uPD431232ALGF-A12 uPD431232ALGF-A7 uPD431232ALGF-A8 uPD431532LGF-A10 | |
AM 5888
Abstract: SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442
|
Original |
M16000EJEV0SG00 AM 5888 SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442 | |
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
Original |
M8E0904E | |
BGA15
Abstract: 72M-BIT samsung ddr quad data rate SRAM idt 150-NM
|
Original |
M16000JJHV0SG 150nm 144pin PD48288118 M16000JJHV0SG00 BGA15 72M-BIT samsung ddr quad data rate SRAM idt 150-NM | |
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社 |
Original |
PD44164082A-A, 4164092A-A, 4164182A-A, 4164362A-A PD44164082A-A2 PD44164092A-A PD44164182A-A1 PD44164362A-A524 HSTA13 PD44164362AF5-EQ2-A | |
PD44164362F5-EQ1
Abstract: PD44164362F5 PD44164362F5-E50-EQ1 PD44164362 PD44164182F5-EQ1 nc-10g
|
Original |
PD44164082, 18M-BIT PD44164082 152-word PD44164182 576-word 18-bit PD44164362 288-word 36-bit PD44164362F5-EQ1 PD44164362F5 PD44164362F5-E50-EQ1 PD44164182F5-EQ1 nc-10g | |
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44164082A-A, 44164092A-A, 44164182A-A, 44164362A-A 18M-BIT DDRII SRAM 2-WORD BURST OPERATION Description The μPD44164082A-A is a 2,097,152-word by 8-bit, the μPD44164092A-A is a 2,097,152-word by 9-bit, the μPD44164182A-A is a 1,048,576-word by 18-bit and the μPD44164362A-A is a 524,288-word by 36-bit synchronous |
Original |
PD44164082A-A, 4164092A-A, 4164182A-A, 4164362A-A 18M-BIT PD44164082A-A 152-word PD44164092A-A PD44164182A-A | |
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44164082A, 44164092A, 44164182A, 44164362A 18M-BIT DDRII SRAM 2-WORD BURST OPERATION Description The μPD44164082A is a 2,097,152-word by 8-bit, the μPD44164092A is a 2,097,152-word by 9-bit, the μPD44164182A is a 1,048,576-word by 18-bit and the μPD44164362A is a 524,288-word by 36-bit synchronous double data rate static |
Original |
PD44164082A, 4164092A, 4164182A, 4164362A 18M-BIT PD44164082A 152-word PD44164092A PD44164182A | |
e50yContextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit PD44164082A-A, 44164092A-A, 44164182A-A, 44164362A-A 18M ビット DDRII SRAM 2 ワード・バースト・オペレーション μPD44164082A-A(2,097,152 ワ ー ド x 8 ビット), μPD44164092A-A ( 2,097,152 ワード × 9 ビット), |
Original |
PD44164082A-A, 4164092A-A, 4164182A-A, 4164362A-A PD44164082A-A2 PD44164092A-A PD44164182A-A1 PD44164362A-A524 ns300 ns270 e50y |