NEC MARKING TSON Search Results

VP215

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2137T5A L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2137T5A is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. This device is housed in a 16-pin TSON Thin small out-line non-leaded package. And this package is able to

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

K1 MARK 6PIN

Abstract: renesas tape and reel nec lot number on packing label nec package label nec lot number on REEL label renesas lot number on packing label MARK E2
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PD166007

Abstract: C11531E IL12 NEC relay 12V
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD166007 SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE PACKAGE DRAWING unit: mm The μ PD166007 device is an N-channel high-side switch with charge 4.0 MIN (4.4 TYP) sense and embedded protection functions. • Built-in charge pump

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

NEC RF Switch

Abstract: marking 6-PIN PLASTIC TSON 6 GHZ nec IEEE802.11a/b/g uPG2163T5N uPG2163T5N-E2 UPG2163
Contextual Info: PRELIMINARY PRODUCT INFORMATION GaAs INTEGRATED CIRCUIT uPG2163T5N GaAs MMIC SPDT SWITCH FOR 2.4 GHz AND 5 GHz DUALBAND WIRELESS LAN DESCRIPTION The uPG2163T5N is a GaAs MMIC SPDT switch for 2.4 GHz and 5 GHz dualband wireless LAN. Low insertion loss and dual band operations suit to dualband wireless LAN system.

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PD166007

Abstract: msl 9350 C11531E IL12
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PD166009

Abstract: AEC-Q100-002 C11531E IL12
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD166009 SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE PACKAGE DRAWING unit: mm The μ PD166009 device is an N-channel high-side switch with charge 4.0 MIN (4.4 TYP) sense and embedded protection functions. • Built-in charge pump

pd166010

Abstract: MARKING S196 AEC-Q100-002 C11531E IL12 IL1-21-2
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD166010 SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE PACKAGE DRAWING unit: mm The μ PD166010 device is an N-channel high-side switch with charge 4.0 MIN (4.4 TYP) sense and embedded protection functions. • Built-in charge pump

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD166009 SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE PACKAGE DRAWING unit: mm The μ PD166009 device is an N-channel high-side switch with charge 4.0 MIN (4.4 TYP) sense and embedded protection functions. • Built-in charge pump

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD166010 SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE PACKAGE DRAWING unit: mm The μ PD166010 device is an N-channel high-side switch with charge 4.0 MIN (4.4 TYP) sense and embedded protection functions. • Built-in charge pump

10-PIN

Abstract: HS350 VP215 BYPASS Capacitors NEC NEC MARKING TSON
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2027TQ L-BAND 4 W HIGH POWER SPDT SWITCH DESCRIPTION The µPG2027TQ is an L-band SPDT GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.0 GHz, having the low insertion loss and high

Contextual Info: PRELIMINARY PRODUCT INFORMATION GaAs INTEGRATED CIRCUIT uPG2160T5K L,S-BAND SPDT SWITCH DESCRIPTION The uPG2160T5K is a GaAs MMIC for L,S-band SPDT（Single Pole Double Throw）which were designed for mobile phone and the another L,S-band applications. This device can operate frequency from 0.5GHz to 3.0GHz, having the low insertion loss and high isolation.

nec 2031

Abstract: 10-PIN HS350 VP215
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2031TQ L-BAND SP3T SWITCH DESCRIPTION The µPG2031TQ is an L-band SP3T GaAs FET switch which was developed for CDMA/PCS/GPS triple mode digital cellular telephone application. The device can operate from 500 MHz to 2.0 GHz, having the low insertion loss

PG2164T5N

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2164T5N DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION The μPG2164T5N is a GaAs MMIC DPDT Double Pole Double Throw switch which was developed for 2.4 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.4 GHz band and 6 GHz band, having

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2162T5N DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION The μPG2162T5N is a GaAs MMIC DPDT Double Pole Double Throw switch which was developed for 2.4 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.4 GHz band and 6 GHz band, having

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2164T5N DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION The µPG2164T5N is a GaAs MMIC DPDT Double Pole Double Throw switch which was developed for 2.4 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.4 GHz band and 6 GHz band, having

marking g4x

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2163T5N SPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION The μPG2163T5N is GaAs MMIC SPDT Single Pole Double Throw switch which was developed for 2.4 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.4 GHz band and 6 GHz band, having the

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2176T5N 50 Ω TERMINATION TYPE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The μPG2176T5N is a GaAs MMIC 50 Ω termination type high power SPDT Single Pole Double Throw switch which was developed for WiMAX. This device can operate frequency from 2.3 to 5.85 GHz, having the low insertion

marking 6-PIN PLASTIC TSON

Abstract: DPDT 6 terminal switch internal diagram IEEE802.11a/b/g HS350
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2162T5N DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION The μPG2162T5N is a GaAs MMIC DPDT Double Pole Double Throw switch which was developed for 2.4 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.4 GHz band and 6 GHz band, having

10-PIN

Abstract: HS350 VP215
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2024TQ GaAs MMIC DPDT SWITCHES FOR 5 GHz BAND WIRELESS LAN DESCRIPTION The µPG2024TQ is a GaAs MMIC DPDT switch for 5 GHz band wireless LAN. Low insertion loss and high handling power contribute to user's system design.

10-PIN

Abstract: HS350 VP215
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG186TQ GaAs MMIC DBS SPDT IF SWITCH DESCRIPTION The µPG186TQ is intended for use in Direct Broadcast Satellite DBS applications within the Low Noise Block (LNB) down-converter for systems where at least multi LNB are required.