NEC MARKING SURFACE Search Results

E256146

Abstract: 200KA LPCC-30 PDBFS220 2A1279 PDBFS500 2A127 NEC 2933 500kcmil Cooper Bussmann lpj
Contextual Info: Maximize Short-Circuit Current Rating While Improving Safety UL Listed, Finger-Safe Enclosed Power Distribution Blocks Offer High SCCR New 2008 NEC and UL 508A SCCR marking requirements state that the following equipment must be marked with an assembly SCCR:

UL508A 28.1

Abstract: ul508a 2A1279 E256146 LP-CC-30 UL508A TABLE 28.1 LPCC-30 PDBFS220 FNQ-R-30 PDBFS330
Contextual Info: Power Distribution Block Maximize Short-Circuit Current Rating While Improving Safety UL Listed, IP-20 Enclosed Power Distribution Block Offer High SCCR New 2005 NEC and UL508A SCCR marking requirements state that the following equipment must be marked with an assembly SCCR:

tokin noise filter MR-2043

Abstract: mr-2043 AT7803 ATC180031 NEC Tokin cap AT78041 AT7811 MHP TIMER AD8013 AT7812
Contextual Info: 6. References DIN rail terminal block 8-pin (ATC180031) Noise filter 10 49 10 27 50 40 Unit: mm Unit: mm 24 19 Type MR-2043: NEC Tokin Corporation M3.5 50 33 35.5 70 E English 40 4–ø4.5 Marking (label) 2.5 3.6 x 4.8 4 12 • To prevent contact failure

marking R33

Abstract: 2SC4227 2SC4227-T1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4227 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold

2SC4226

Abstract: 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold

t72 marking

Abstract: 2SC4570 2SC4570-T1 transistor for UHF
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4570 NPN EPITAXIAL SILICON RF TRANSISTOR FOR UHF TUNER OSC/MIX 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super minimold

2SC4228

Abstract: 2SC4228-T1 TRANSISTOR R44
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold

DEVICE T76

Abstract: 2SC4571 2SC4571-T1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4571 NPN EPITAXIAL SILICON RF TRANSISTOR FOR UHF TUNER OSC/MIX 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super minimold

NEC tantalum capacitor

Abstract: code marking NEC marking AA NEC SVSP0G106M SVSP0G475M SVSP0G685M SVSP0J105M SVSP0J106M SVSP0J155M SVSP0J225M
Contextual Info: DATA SHEET SOLID TANTALUM CAPACITOR SVS SERIES Surface mount resin molded, Ultra miniaturized chip The SVS series is a line-up of high performance ultra miniaturized tantalum chip capacitors. The case dimensions are 2.0 mm x 1.25 mm × 1.2 mm as shown below.

IEC60255

Abstract: ER0046EJ nec ec2 LR46266 NEC EC2 RELAYS NEC RELAY two coil
Contextual Info: DATA S H E E T MINIATURE SIGNAL RELAY EC2 ND ,EE2(ND) SERIES High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type DESCRIPTION NEC EC2 (ND) / EE2 (ND) series has based supplementary insulation for EN60950. (TUV Certified File No.

SVFD1C336M

Abstract: SVFB21A475M SVFB21V105M SVFC1A156M SVFD21A156M NEC tantalum capacitor svfc
Contextual Info: DATA S H E E T SOLID TANTALUM CAPACITOR SV/F SERIES Surface mount resin molded chip with Built-in fuse, Low blow-out current 2A The SV/F series features a built-in fuse to minimize circuit damage from over current by protection with less than a half blow-out current of the former type.

tokin 108

Abstract: NEC RELAY two coil NEC RELAY tokin IEC60255 LR46266 NEC RELAY two coil ms medical application of ultrasonic waves 5v relay 8 pin EC2 -5V
Contextual Info: DATA S H E E T MINIATURE SIGNAL RELAY EC2 ND ,EE2(ND) SERIES High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type DESCRIPTION NEC TOKIN EC2 (ND) / EE2 (ND) series has based supplementary insulation for EN60950. (TUV Certified File

marking code B2 NEC

Abstract: NEC tantalum capacitor 104 TANTALUM capacitor nec date code marking NEC 105M C105 SVHA1A225M SVHB21A475M SVHC1A156M DIP capacitor tantalum electronic corporation
Contextual Info: DATA SHEET TANTALUM CAPACITOR SV/H SERIES SURFACE MOUNT RESIN MOLDED TANTALUM CHIP CAPACITORS HIGH RELIABILITY NEC’s SV/H series solid tantalum capacitor has developed for automotive application. Comparing to the former type R Series , the higher reliability and the higher performance have been built in the

HS350

Abstract: VP215
Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8204TK VARIABLE GAIN AMPLIFIER FOR TRANSMITTER AGC DESCRIPTION The µPC8204TK is a silicon monolithic integrated circuit designed as variable gain amplifier. The package is 6-pin lead-less minimold suitable for surface mount.

IEC60255

Abstract: LR46266 NEC EC2 RELAYS
Contextual Info: DATA S H E E T MINIATURE SIGNAL RELAY EC2 ND ,EE2(ND) SERIES High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type DESCRIPTION NEC EC2 (ND) / EE2 (ND) series has based supplementary insulation for EN60950. (TUV Certified File No.

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

NEC JAPAN 282 110 01

Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

2SC4571

Abstract: 2SC4571-T1 2SC4571-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

2SC4571

Abstract: 2SC4571-T1 2SC4571-T2
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

ne5500479a-t1

Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using NEC’s NEWMOS technology NEC’s 0.6 µm WSi gate lateraldiffusion MOS FET and housed in a surface mount package. The device can deliver 31.5 dBm output power with

NE5510279A-T1

Contextual Info: DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm WSi gate lateraldiffusion MOS FET and housed in a surface mount package. The device can deliver 33.0 dBm output power with

PS8602L-E3

Abstract: PS8601L PS8602 PS8602L PS8602L1 PS8602L2 VDE0884
Contextual Info: DATA SHEET PHOTOCOUPLER PS8602,PS8602L HIGH NOISE REDUCTION HIGH SPEED ANALOG OUTPUT TYPE 8 PIN PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS8602 and PS8602L are 8-pin high speed photocouplers containing a GaAIAs LED on input side and a P-N photodiode and a high speed amplifier transistor on output side on one chip. The PS8602 is in a plastic DIP Dual Inline Package . The PS8601L is lead bending type (Gull wing) for surface mount.

PS8601

Abstract: PS8601L PS8601L1 PS8601L2 PS8601L-E3 VDE0884
Contextual Info: DATA SHEET PHOTOCOUPLER PS8601,PS8601L HIGH SPEED ANALOG OUTPUT TYPE 8-PIN PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS8601 and PS8601L are 8-pin high speed photocouplers containing a GaAIAs LED on input side and a PN photodiode and a high speed amplifier transistor on output side on one chip. The PS8601 is in a plastic DIP Dual Inline Package . The PS8601L is lead bending type (Gull wing) for surface mount.

Contextual Info: DATA SHEET PHOTOCOUPLER PS8601,PS8601L,PS8601L1,PS8601L2 HIGH SPEED ANALOG OUTPUT TYPE 8-PIN PHOTOCOUPLER <R> −NEPOC Series− DESCRIPTION The PS8601 and PS8601L are 8-pin high speed photocouplers containing a GaAIAs LED on input side and a PN photodiode and a high speed amplifier transistor on output side on one chip. The PS8601 is in a plastic DIP Dual Inline Package . The PS8601L is lead bending type (Gull wing) for surface mount.