NEC LE 737 Search Results

Contextual Info: DATA SHEET_ NEC MOS INTEGRATED CIRCUIT uPD16750 384-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 256-GRAY SCALES DESCRIPTION The /j, P D 1 67 50 is a sou rce d rive r for T F T -L C D s ca p a b le o f d e aling w ith d isp la ys w ith 2 5 6 -g ra y scales. D ata in pu t is

1ss nec

Contextual Info: PRELIM INARY DATA S H E E T MOS IN TEGRATED CIRCUIT MC-428LFF72 3.3 V OPERATION 8 M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, HYPER PAGE MODE EDO Description Th e M C-428LFF72 1« • 6.388,608 words by 72 bits dynam ic RAM m oduli on which 8 pieces of 84 M DRAM :

M1314

Abstract: PD42S18160 4218160LE-60
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S18160, 4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

NEC 1357

Abstract: LA 8873 TRANSISTOR C 4460
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the

d70108

Abstract: NEC d70108 V20 70108 iem-871 nec d70108 nec v20 d70108 mPD70108 D70108 MICRO pD8080AFC uPD70108
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿uP D 7 0 1 0 8 V20 16-/8-BIT MICROPROCESSOR The //PD70108 V20 is a CMOS 16-/8-bit microprocessor. It has a 16-bit architecture and is equipped with a 8-bit data bus. The /iPD70108 has a pow erful instruction set which includes bit processing and packed

IRF 748 n

Abstract: PD4264800
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4264800, 4265800 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD4264800, 4265800 are 8,388,608 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

V2vFx

Abstract: 78p018f MEC 1300 nu
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION T h e ^ P D 7 8 P 0 1 8 F {A c o m e s un d e r a m ore severe qua lity a s s u ra n c e p ro g ra m than th e ¿/P D 76P 01 8= {stan dard grade), so it is cla s s ifie d a s spe c ia l grade in N E C ’s qua lity grade cla ssification .

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escrip tio n The /iPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 w ordxbitxbank , respectively.

th 20594

Abstract: HA 17723 30976 1982U 22024U
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . (Unit: mm) FEATURES • P- 1 = 24 dBm TYP.

PC1571

Abstract: upc1571
Contextual Info: NEC /uPC1571 COMPANDER N E C Electronics Inc. Pin Configuration D escription T h e /UPC1571 is a d u a l g a in c o n tr o l c ir c u it in w h ic h e ith e r c h a n n e l m a y be u se d as a d y n a m ic ra n g e c o m p re s s o r o r e x p a n d e r. E ach c h a n n e l c o n ta in s a

780308GF

Abstract: LS1CH CKK6
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿¿PD 7 8 0 3 0 6 ,7 8 0 3 0 8 8-BIT SINGLE-CHIP MICROCONTROLLER D E S C R IP T IO N /¿PD7803Q6 and 780308 are pro d u c ts in the //P D 7 8 0 3 0 8 sub s e rie s w ith in th e 78K /0 series, w h ic h in co rp o ra te s LCD

Contextual Info: PRELIMINARY PRODUCT INFORMATION NEC MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER The ,uPD78F9197Y is ,uPD789197Y sub-series products of the 78K/0S series. These microcontrollers feature an 8-bit CPU, I/O ports, timers, a serial interface, A/D converters, interrupt control

pc1571c

Abstract: PC1571 upc1571 compressor ALC compressor ic
Contextual Info: NEC A/PCI 571 COMPANDER NEC Electronics Inc. Pin Configuration Description T h e f j PC 1571 is a d u a l g a in c o n tr o l c ir c u it in w h ic h e ith e r c h a n n e l m a y be u se d as a d y n a m ic ra n g e c o m p re s s o r o r e x p a n d e r. E a ch c h a n n e l c o n ta in s a

SES N 2402

Abstract: IC3645 Q0B215 73s2s IC-3645 D482235 TI42
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P P 4 8 2 2 3 4 , / 4 8 2 2 3 5 2M-Bit Dual Port Graphics Buffer 256K-WORD BY 8-BIT Description The /¿PD482234 and /¿PD482235 have a random access port and a serial access port. The random access port has a 2M -bit 262, 144 w ords x 8 bits memory cell array structure. The serial access port can perform

UPD4265160-A60

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4264160, 4265160 6 4 M -B IT D YN A M IC RAM 4 M -W O R D BY 16-BIT, FAST PAGE M O DE Description The /iPD 4264160,4265160 are 4,194,304 words by 16 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

transistor 2sc 1586

Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

transistor NEC B 617

Abstract: nec. 5.5 473
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

NEC concurrent rdram

Abstract: concurrent RDRAM 72 NEC Rambus
Contextual Info: NEC MOS INTEGRATED CIRCUIT J IP D 4 8 8 1 7 0 18M bit Ram bus DRAM IM w o rd X 9bit x 2bank D e s c rip tio n The 18-Megabit Rambus™ DRAM (RDRAM™) is an extremely-high-speed CMOS DRAM organized a sJM words by 9 bits and capable of bursting up to 256 bytes of data at 2 nanoseconds per byte. The use of Rambus S ig r ilf f llM f t jc

P130T

Abstract: Z57F
Contextual Info: ¿¿PD75112, 75116 4-Bit Single-Chip Microcomputer Data Sheet Description Please refer to "Quality Grade on NEC Semicon­ ductor Devices" Document number IEI-1209 published by NEC Corporation to know the speci­ fication of quality grade on the devices and its

2SC 968 NPN Transistor

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from

uPD4168

Abstract: bq 726
Contextual Info: 4^ /1T V * * pPD7831xA/78P31xA 16-/8-Bit, Single-Chip CMOS Microcomputers, Real-Time Control Oriented N E C E le c tro n ic s Inc. Description n Four-channel 8 -bit A/D converter The pPD7831xA family of microcomputers is designed for use in process control. They perform all the usual

4800L

Abstract: IC-3052B 1PD42S4800L-A70 424800L uPD424800-L
Contextual Info: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ / juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability

concurrent rdram NEC

Abstract: NEC rdram concurrent 16MB NEC RDRAM concurrent concurrent RDRAM 72 Concurrent RDRAM concurrent rdram LG NEC concurrent rdram NEC Rambus LG concurrent RDRAM
Contextual Info: NEC MOS INTEGRATED CIRCUIT ju ,P D 4 8 8 1 7 0 18M bit Rambus DRAM 1 Mword x 9bit x 2bank Description The 18-Megabit Rambus™ DRAM (RDRAM™) is an extremeiy-high-speed CMOS DRAM organized as.gM woi [by 4 9 bits and capable of bursting up to 256 bytes of data at 2 nanoseconds per byte. The use of Rambus Signin

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from