NEC IC D 553 C Search Results

nec 2571

Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .

NEC D 553 C

Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

transistor AFR 16

Abstract: BAIL4M transistor afr 22 bn1l4m ba1l4m T108
Contextual Info: I ¿Y I fK NEC m ïâ-ê- h ^ > > x 9 Compound Transistor iír / v - r z B A I L 4M í£ í / t Ñ 1 N P N X fcf f l r i s T J U 9 4t $ o £ W T H 1 ¥ - Í í L • m m ★ x f f i t Í L £ 1*1 j t L T V ' á t o ( R j = 4 7 kQ , R 2 = 4 7 k f í ) ÖE

BN1F4M

Contextual Info: NEC D E S C R IP TIO N PNP SILICON TRANSISTOR BN1F4M The B N 1F4M is designed for use in medium speed switching PACKAG E D IM E N S IO N S circuit. FEATURE in m illim ete rs inches 4 .2 MAX. (0.1 6 5 MAX.) • Bias resistors built-in type PNP transistor equivalent circuit.

HT - 0886

Abstract: HT 0886 g3je ht 9366 MARKING LE50 T108
Contextual Info: NEC 1 î ^>— 57 . Ì / — h C om pound Transistor / \ 1 ' 7 t «F GN1A3Q & ^ •^ H ! W Ì o'<j tx m /L £ ftB itr o tte ( Ri = 1 .0 k û , 2.1 ±0.1 1.25 + 0.1 R 2 = 10 kQ O G A 1A 3Q £ 3 > r i) / > ? ') T îû tm T ' ë i t (T a = m z îv JX. ; 2

AI820

Abstract: 5886a ah506 AA1F4M l0422 PA33 T108 332I transistor et 454 TC-5886A
Contextual Info: SEC i ï f / \ Y r 7 •J- ^ . C /-a - ê - h =7 V C o m p o u n d T ra n s is to r AA1 F4M ÎfiÎÆ F *3Ü cN P N xt°^41'> 7 '^ i f é ^ ,J 4# Y:7 > i > 7 . 9 i . mm, i t R i = 22 k Q , R 2= 22 k Q o AN1F4M t =t > ~7° 'J / > ? ij Ttë t l i t c

c1677C

Abstract: P12152E C1677 C10535E PC1677C TRANSISTOR 1616 ac
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1677C 5 V-BIAS, +19.5 dBm OUTPUT, 1.8 GHz WIDE BAND SiMMIC AMPLIFIER DESCRIPTION The µPC1677C is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter

NEC Ga FET marking L

Abstract: U/25/20/TN26/15/850/NE32984D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm

6008A

Abstract: B0952 nec 1251 T108 H052
Contextual Info: Com pound T r a n s is t o r FN1A4P * £ Î/ lF * 3 1 P N P I t & • = !> V = 7 > i > ^ m ^ - f ï • mm) 0 ' < j T ?,}& }?[£ fàiië 1 1 È 1 0 ( R, = 10 kQ, R 2= 47 kQ) 2 .8 ± 0 .2 0 .6 5 Î";!: 1.5 O F A 1 A 4 P t =J > v ” IJ / > ? u Tê t t G

UPC1653

Abstract: UPC1653A UPC1653P UPC1654 1653A DB1316
Contextual Info: NEC 1.0 G Hz BANDWIDTH SILIC O N M M IC AMPLIFIER UPC1653A UPC1653P FEATU RES N O IS E F IG U R E A N D P O W E R G AIN • BROAD FREQUENCY R E SP O N SE 1300 M H z T Y P a! 3 dB Down so • INPUT AND OUTPUT MATCHED TO 50 Q 25 • AVAILABLE IN CHIP OR HERMETIC PACKAG E

O552

Abstract: T108 asti 3773 GA1L3N la 5531 L092 GN1L3N mol3
Contextual Info: i. I «\ / v r * l?N I i ï T ÎK r NEC C o m p o u n d T ran sis to r GN1L3N ffif/L r t i e p n p :n t f * * y□v ^ v i* * :? n Sfc U v ^ to R i = 4 .7 k fì, R 2= 10 k£2 o G A 1 L 3 N t 3 > y }) / > ? i) X " itm X"ê i i ~ (Ta = 25 °C) H g 9 n u ?

xeh 250 120

Abstract: T108 TC-6056 UUJK
Contextual Info: 5 ; . = /— 1^. ~J— NEC m Com pound Transistor FAI L4Z ty - ÌV - • m m $ f t o^qrxffi^^lLtv^tc ( R x= 4 7 2.8 + 0.2 0.651 1.5 kQ) O E o F N 1 L 4 Z =? > 7 ° t (T a Il U / = > 9 ]) X i t m T ' è £-?< 25 °C ) h& ^r # Se VcBO te 60 V Marking Z JU 9 9 ' ^ - l " / 9 f f J M E

Transistor NEC K 3654

Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS

Contextual Info: NEC NEC Electronics Inc. //PD411001 1 ,0 4 8 ,5 7 6 X 1-BIT DYNAMIC NMOS RAM PRELIMINARY INFORMATION Description Pin Configurations The/¿PD411001 is a nibble mode version 1,048,576word by 1-bit dynam ic N-channel MOS random access memory RAM . It is designed to operate from a single

2SA1608

Abstract: 2SC4173
Contextual Info: NEC j m^Tfvrx A Silicon T ran sisto r _ 2SC4173 N P N ih N PN Silicon Epitaxial T ra n sisto r Audio Frequency A m p lifie r and Switching # i t O ftg | mii i t i 1 , X 't -y - f > 7", • &)§ iSigipM Ù ¿1a S t t c f if f l- C 'è 4" 11] i t o

lm313XBN

Abstract: 428-C
Contextual Info: HITACHI/ OPTOELE CTR ONICS blE D 44^205 0012557 553 « H I T M '^ÊSmÊiÊËi m LM313XBN • 2 5 6 d o t(W ) x 6 4 d o t (H ) graphic and a lph a-n um eric display (EL Backlit version) ■ C o n tro lle r L S I H D 6 1 8 3 0 is b u ilt-in ■ C o lo r to n e : Y e llo w g re e n

transistor 2sc 1586

Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

2sc5194-t1

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz

transistor NEC B 617

Abstract: nec. 5.5 473
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

PC7905H

Abstract: PC7905
Contextual Info: NEC N E C Electronics Inc. D escrip tion /jPC7900 SERIES THREE-TERMINAL 1.0 A NEGATIVE VOLTAGE REGULATORS Pin C o n fig u ra tio n T he //PC7900 series o f three te rm in a l reg u la to rs are m o n o lith ic negative voltage reg u la to rs w h ich feature

NEC 1357

Abstract: LA 8873 TRANSISTOR C 4460
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the

Contextual Info: MC-41256A9 262,144 X 9-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A9 is a 262,144-word by 9-bit DRAM mod­ ule designed to operate from a single + 5-volt power supply. Advanced dynamic NMOS circuitry, Including a

Contextual Info: SEC pPD72065/65B CMOS Floppy-Disk Controller NEC Electronics Inc. Description The ¿¿PD72065/65B CMOS Floppy-Disk Controller FDC is NEC’s follow-on to the pPD765A/B. (¿iPD72065B is a functionally enhanced version of ¿iPD72065.) The FDC is an LSI chip containing the circuitry and control func­