Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NEC IC D 553 C Search Results

    NEC IC D 553 C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F193/BEA
    Rochester Electronics LLC 54F193/BEA - Dual marked (M38510/34304BEA) PDF Buy
    PEF24628EV1X
    Rochester Electronics LLC PEF24628 - SOCRATES Four-channel SHDSL EFM system-on-chip PDF
    ICM7555MTV/883
    Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    ICL8212MTY/B
    Rochester Electronics LLC Programmmable High Accuracy Voltage Detecor PDF Buy
    LM710CH
    Rochester Electronics LLC LM710 - Comparator, 1 Func, 5000uV Offset-Max, 40ns Response Time, BIPolar, MBCY8 PDF Buy

    NEC IC D 553 C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    nec 2571

    Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .


    OCR Scan
    2SC4957 2SC4957-T1 4957-T2 2SC4957) nec 2571 NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz PDF

    NEC D 553 C

    Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.


    OCR Scan
    2SC4957 2SC4957-T1 2SC4957-T2 Ple-107 NEC D 553 C TRANSISTOR MAC 223 NEC IC D 553 C PDF

    D 1437 transistor

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


    OCR Scan
    2SC5004 D 1437 transistor PDF

    transistor AFR 16

    Abstract: BAIL4M transistor afr 22 bn1l4m ba1l4m T108
    Contextual Info: I ¿Y I fK NEC m ïâ-ê- h ^ > > x 9 Compound Transistor iír / v - r z B A I L 4M í£ í / t Ñ 1 N P N X fcf f l r i s T J U 9 4t $ o £ W T H 1 ¥ - Í í L • m m ★ x f f i t Í L £ 1*1 j t L T V ' á t o ( R j = 4 7 kQ , R 2 = 4 7 k f í ) ÖE


    OCR Scan
    Cycleg50 transistor AFR 16 BAIL4M transistor afr 22 bn1l4m ba1l4m T108 PDF

    BN1F4M

    Contextual Info: NEC D E S C R IP TIO N PNP SILICON TRANSISTOR BN1F4M The B N 1F4M is designed for use in medium speed switching PACKAG E D IM E N S IO N S circuit. FEATURE in m illim ete rs inches 4 .2 MAX. (0.1 6 5 MAX.) • Bias resistors built-in type PNP transistor equivalent circuit.


    OCR Scan
    PDF

    HT - 0886

    Abstract: HT 0886 g3je ht 9366 MARKING LE50 T108
    Contextual Info: NEC 1 î ^>— 57 . Ì / — h C om pound Transistor / \ 1 ' 7 t «F GN1A3Q & ^ •^ H ! W Ì o'<j tx m /L £ ftB itr o tte ( Ri = 1 .0 k û , 2.1 ±0.1 1.25 + 0.1 R 2 = 10 kQ O G A 1A 3Q £ 3 > r i) / > ? ') T îû tm T ' ë i t (T a = m z îv JX. ; 2


    OCR Scan
    PWS10 CycleS50 HT - 0886 HT 0886 g3je ht 9366 MARKING LE50 T108 PDF

    AI820

    Abstract: 5886a ah506 AA1F4M l0422 PA33 T108 332I transistor et 454 TC-5886A
    Contextual Info: SEC i ï f / \ Y r 7 •J- ^ . C /-a - ê - h =7 V C o m p o u n d T ra n s is to r AA1 F4M ÎfiÎÆ F *3Ü cN P N xt°^41'> 7 '^ i f é ^ ,J 4# Y:7 > i > 7 . 9 i . mm, i t R i = 22 k Q , R 2= 22 k Q o AN1F4M t =t > ~7° 'J / > ? ij Ttë t l i t c


    OCR Scan
    SC-43B Cycled50 AI820 5886a ah506 AA1F4M l0422 PA33 T108 332I transistor et 454 TC-5886A PDF

    c1677C

    Abstract: P12152E C1677 C10535E PC1677C TRANSISTOR 1616 ac
    Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1677C 5 V-BIAS, +19.5 dBm OUTPUT, 1.8 GHz WIDE BAND SiMMIC AMPLIFIER DESCRIPTION The µPC1677C is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter


    Original
    PC1677C PC1677C c1677C P12152E C1677 C10535E TRANSISTOR 1616 ac PDF

    NEC Ga FET marking L

    Abstract: U/25/20/TN26/15/850/NE32984D
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm


    OCR Scan
    NE32984D NE32984D NE32984D-SL NE32984Dr NEC Ga FET marking L U/25/20/TN26/15/850/NE32984D PDF

    6008A

    Abstract: B0952 nec 1251 T108 H052
    Contextual Info: Com pound T r a n s is t o r FN1A4P * £ Î/ lF * 3 1 P N P I t & • = !> V = 7 > i > ^ m ^ - f ï • mm) 0 ' < j T ?,}& }?[£ fàiië 1 1 È 1 0 ( R, = 10 kQ, R 2= 47 kQ) 2 .8 ± 0 .2 0 .6 5 Î";!: 1.5 O F A 1 A 4 P t =J > v ” IJ / > ? u Tê t t G


    OCR Scan
    PWS10 CycleS50 6008A B0952 nec 1251 T108 H052 PDF

    UPC1653

    Abstract: UPC1653A UPC1653P UPC1654 1653A DB1316
    Contextual Info: NEC 1.0 G Hz BANDWIDTH SILIC O N M M IC AMPLIFIER UPC1653A UPC1653P FEATU RES N O IS E F IG U R E A N D P O W E R G AIN • BROAD FREQUENCY R E SP O N SE 1300 M H z T Y P a! 3 dB Down so • INPUT AND OUTPUT MATCHED TO 50 Q 25 • AVAILABLE IN CHIP OR HERMETIC PACKAG E


    OCR Scan
    UPC1653A UPC1653P UPC1653 UPC1654. 20prn UPC1653P UPC1654 1653A DB1316 PDF

    O552

    Abstract: T108 asti 3773 GA1L3N la 5531 L092 GN1L3N mol3
    Contextual Info: i. I «\ / v r * l?N I i ï T ÎK r NEC C o m p o u n d T ran sis to r GN1L3N ffif/L r t i e p n p :n t f * * y□v ^ v i* * :? n Sfc U v ^ to R i = 4 .7 k fì, R 2= 10 k£2 o G A 1 L 3 N t 3 > y }) / > ? i) X " itm X"ê i i ~ (Ta = 25 °C) H g 9 n u ?


    OCR Scan
    CyclesS50 O552 T108 asti 3773 GA1L3N la 5531 L092 GN1L3N mol3 PDF

    xeh 250 120

    Abstract: T108 TC-6056 UUJK
    Contextual Info: 5 ; . = /— 1^. ~J— NEC m Com pound Transistor FAI L4Z ty - ÌV - • m m $ f t o^qrxffi^^lLtv^tc ( R x= 4 7 2.8 + 0.2 0.651 1.5 kQ) O E o F N 1 L 4 Z =? > 7 ° t (T a Il U / = > 9 ]) X i t m T ' è £-?< 25 °C ) h& ^r # Se VcBO te 60 V Marking Z JU 9 9 ' ^ - l " / 9 f f J M E


    OCR Scan
    PWS10 xeh 250 120 T108 TC-6056 UUJK PDF

    Transistor NEC K 3654

    Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS


    OCR Scan
    NE32984D NE32984D NE32984D-T1A NE32984D-SL NE32984D-T1 Transistor NEC K 3654 NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V PDF

    Contextual Info: NEC NEC Electronics Inc. //PD411001 1 ,0 4 8 ,5 7 6 X 1-BIT DYNAMIC NMOS RAM PRELIMINARY INFORMATION Description Pin Configurations The/¿PD411001 is a nibble mode version 1,048,576word by 1-bit dynam ic N-channel MOS random access memory RAM . It is designed to operate from a single


    OCR Scan
    uPD411001 576word /nPD411001 3-001659A //PD411001 HPD411001 PDF

    2SA1608

    Abstract: 2SC4173
    Contextual Info: NEC j m^Tfvrx A Silicon T ran sisto r _ 2SC4173 N P N ih N PN Silicon Epitaxial T ra n sisto r Audio Frequency A m p lifie r and Switching # i t O ftg | mii i t i 1 , X 't -y - f > 7", • &)§ iSigipM Ù ¿1a S t t c f if f l- C 'è 4" 11] i t o


    OCR Scan
    2SC4173 2SA1608 2SC4173 PDF

    lm313XBN

    Abstract: 428-C
    Contextual Info: HITACHI/ OPTOELE CTR ONICS blE D 44^205 0012557 553 « H I T M '^ÊSmÊiÊËi m LM313XBN • 2 5 6 d o t(W ) x 6 4 d o t (H ) graphic and a lph a-n um eric display (EL Backlit version) ■ C o n tro lle r L S I H D 6 1 8 3 0 is b u ilt-in ■ C o lo r to n e : Y e llo w g re e n


    OCR Scan
    LM313XBN DG1255T 428-C lm313XBN 428-C PDF

    transistor 2sc 1586

    Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range


    OCR Scan
    2SC5006 2SC5006 transistor 2sc 1586 B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor PDF

    2sc5194-t1

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz


    OCR Scan
    2SC5194 2SC5194-T2 2sc5194-t1 PDF

    transistor NEC B 617

    Abstract: nec. 5.5 473
    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range


    OCR Scan
    2SC5007 2SC5007 transistor NEC B 617 nec. 5.5 473 PDF

    PC7905H

    Abstract: PC7905
    Contextual Info: NEC N E C Electronics Inc. D escrip tion /jPC7900 SERIES THREE-TERMINAL 1.0 A NEGATIVE VOLTAGE REGULATORS Pin C o n fig u ra tio n T he //PC7900 series o f three te rm in a l reg u la to rs are m o n o lith ic negative voltage reg u la to rs w h ich feature


    OCR Scan
    /PC7900 //PC7900 PC7905 PC7905H PDF

    NEC 1357

    Abstract: LA 8873 TRANSISTOR C 4460
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the


    OCR Scan
    2SC5004 2SC5004 NEC 1357 LA 8873 TRANSISTOR C 4460 PDF

    Contextual Info: MC-41256A9 262,144 X 9-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A9 is a 262,144-word by 9-bit DRAM mod­ ule designed to operate from a single + 5-volt power supply. Advanced dynamic NMOS circuitry, Including a


    OCR Scan
    MC-41256A9 144-word pPD41256 MC-41256A9 PDF

    Contextual Info: SEC pPD72065/65B CMOS Floppy-Disk Controller NEC Electronics Inc. Description The ¿¿PD72065/65B CMOS Floppy-Disk Controller FDC is NEC’s follow-on to the pPD765A/B. (¿iPD72065B is a functionally enhanced version of ¿iPD72065.) The FDC is an LSI chip containing the circuitry and control func­


    OCR Scan
    pPD72065/65B PD72065/65B pPD765A/B. iPD72065B iPD72065. PDF