NEC D 75 P Search Results

PD7506

Abstract: uPD7500
Contextual Info: SEC //P D 75 06 4-B IT, SINGLE-CHIP CMOS MICROCOMPUTER NEC Electronics Inc. Pin C onfigurations D escription T he //P D 7 5 0 6 C M O S 4-b it single chip m icrocom puter has the /L/PD7500 series architecture. T w en ty-tw o I/O lines are organized into the 2-bit input port 0, the 4-bit

Contextual Info: DATA SHEET_ 75 3018 NEC MOS INTEGRATED CIRCUIT ^PD P 4-BIT SINGLE-CHIP MICROCONTROLLER The nPD 75P3018 replaces the nP D 753017’s internal m ask ROM with a one-tim e PROM, and features expanded ROM capacity. Because the nP D 75P3018 supports program m ing by users, it is suitable for use in evaluations of system s in

Contextual Info: 6427525 N E C ELECTRONICS INC W7S * “72C 09181 D 75 DËTfc L4575E5 Q00T1Û1 7 T ~ S R 603C D W RED n*aA sP N h ig h NEC Electronics Inc. IN TE N SITY LEDs NEPOC SERIES Description Features The SR 6 0 3D , S R 6 0 3 C and S R 6 0 3 W are full resinmolded LE D lamps which emit brilliant, uniform red

pc574j

Abstract: sh03 5108a T108 HS 1621 UPC-574J XL08 LM 3323
Contextual Info: NEC Aà i? T /\f7 * < • 4 — B ipolar A nalog Integ rated C irc u it M PC574J V o lt a g e II M a x im u m R a t in g s T a = 2 5 fê 5e # 10 Iz mA s fi » ÜC * Pd yB ijnL Jt Topt —20—+75 °C ÿB liDL Ä Tstg —40~ °C + D i m e n s io n s (Unit : mm

N transistor NEC sc88

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA679TB N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA679TB is a switching device, which can be driven directly by a 2.5 V power source. The µ PA679TB features a low on-state resistance and excellent switching characteristics, and is suitable for

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4148 SWITCHING N-CHANNEL MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4148 is a switching element that is most suitable for use in φ 5.2 MAX. DC-DC converter whose DC input voltage is 24 to 48 V. 5.5 MAX.

transistor c5578

Abstract: BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor
Contextual Info: Asia / Pacific Belden Electronics Division Australia Hong Kong Shanghai 2200 U.S. Highway 27 South Richmond, IN 47374-7279 Phone: 765-983-5200 Fax: 765-983-5294 E-mail: info@belden.com Web: www.belden.com Belden Australia Pty Ltd. 100 Olympia Street Tottenham, Victoria 3012

DCS1800

Abstract: NE5520279A NE5520279A-T1 NE5520279A-T1A VP215 ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology

2SK3638

Abstract: 2SK3638-ZK
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3638 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE

uPD42S4800

Abstract: UPD42S4800-70 KM48C512-10 nec v80 upd424800le uPD424800
Contextual Info: - 4M CMOS X 4 D y n a m i c ••/ f- > R A M 5 2 4, 2 8 8 x 8 2 8 P I N 5 1 4 8 0 0 A * [*typ] / ft t í 239 it, f) [*typ] U 71^ m £ a TRAC TRCÏ TCAH max ain «in (ns) (ns) (ns) £ CC) KM514800JP/Z P/TT/RR-10 HM514800JP/ZP/TT/RR-7 HM514800JP/ZP/TT/RR-8

SC-95

Abstract: transistor NEC 2500
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1919 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION • 2.5 V drive available • Low on-state resistance RDS(on)1 = 58 mΩ MAX. (VGS = −4.5 V, ID = −3.0 A) RDS(on)2 = 60 mΩ MAX. (VGS = −4.0 V, ID = −3.0 A)

upa1817

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1817 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µPA1817 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and

D1843

Abstract: 2SK4095 2SK4095-AZ 2SK4095-T-AZ SC-43A
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4095 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4095 is the best switching element for the DC-DC φ 5.2 MAX. converter usage from 24 to 48 V in the direct current input

D1877

Abstract: 2SK4092 2SK4092-A MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4092 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

PA1813

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and

NP36P04KDG

Abstract: NP36P04KDG-E1-AY NP36P04KDG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P04KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP36P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP36P04KDG-E1-AY Note

NP100P06PDG

Abstract: NP100P06PDG-E1-AY MP-25ZP NP100P06PDG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P06PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P06PDG-E1-AY

2sk3570

Abstract: 2SK3570-ZK D16256EJ2V0DS00 2SK3570-S 2SK3570-Z MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3570 SWITCHING N-CHANNEL POWER MOS FET ★ DESCRIPTION ORDERING INFORMATION The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, PART NUMBER PACKAGE

NP32N055HDE

Abstract: NP32N055IDE NP32N055SDE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HDE, NP32N055IDE, NP32N055SDE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications.

NP32N055SHE

Abstract: NP32N055HHE NP32N055IHE d1415
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HHE, NP32N055IHE, NP32N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER Transistors designed for high current switching applications.

SC-95

Contextual Info: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA508TE N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA508TE is a switching device, which can be driven

MPC320

Abstract: a25C
Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT /¿PC3207GR FREQUENCY DOWN CONVERTER FOR VHF TO UHF BAND TV/VCR TUNER DESCRIPTION The / jPC3207GR is a Silicon monolithic 1C designed for TV/VCR tuner applications. This 1C consists of a double balanced mixer DBM , I6cal oscillator, preamplifier for precscaler operation, IF amplifier, regulator, UHF/VHF

2SK2234

Abstract: MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK2234 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS

d1413

Abstract: 2SK3356 NEC J 302 MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3356 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3356 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3356 TO-3P designed for high current switching applications.