NEC CAPACITORS VOL Search Results

NEC CAPACITORS VOL

Contextual Info: Multilayer Ceramic Capacitors Standard Products NEC TOKIN’s multilayer ceramic capacitors are high-dielectric capacitors fabricated by sintering at low temperature. NEC TOKIN was the world's first to employ these capacitors, using NEC TOKIN’s unique low-temperature sintered

Contextual Info: Tantalum Capacitors SVZ Series SV Z SER IES NEC’s SVZ series solid tantalum capacitors have low ESR value. These capacitors are suitable for noise reduction in a high-frequency application with its low ESR. FEATURES • Low Impedance ESR • Same case sizes as NEC’s R series are available

smt 35rv

Abstract: smd code marking NEC tantalum capacitor DN0J101M1S NRA225M10 smd code marking NEC capacitor MARKING CODE SMD JW DN0J 35rv transistor horizontal c 5936 104 TANTALUM capacitor nec
Contextual Info: CAPACITORS DATA BOOK NEC Corporation 1995 PREFACE Since the development of solid electrolyte tantalum capacitor having excellent performance in 1955, NEC has been advancing research into new materials and improved production technologies, and has introduced

nec eN8 capacitor

Abstract: qa solar 3722 9l 476 Tantalum Capacitor NEC TOKIN TANTALUM CAPACITORS nec jj8 nec gJ8 tantalum ca7 ne gj8 Samsung Tantalum Capacitor marking code je8
Contextual Info: CAPACITORS DATA BOOK 2005 Correct Use of Tantalum Chip Capacitors Be sure to read this before using NEC TOKIN Tantalum Capacitors. [Notes] ● Be sure to read "PRECAUTIONS FOR TANTALUM CAPACITOR USE" p56 - p66 before commencing circuit design or using the capacitor.

d7343

Contextual Info: Tantalum Capacitors SVF Series SVF SERIES NEC’s SVF series capacitors feature a built-in fuse to minimize circuit damage from over current. Thers fuse-protected capacitors are suitable for noise absorption applications such as those required for computers, terminals and measuring instruments.

tokin multilayer ceramic capacitor

Abstract: marking X5T
Contextual Info: Precautions for Use ● Soldering Leaded type capacitors ● Reflow soldering (Chip type capacitors) Soldering of multilayer ceramic capacitors should be carried out under the conditions of less than 260°C and not more than 5 sec. NEC TOKIN’s multilayer ceramic capacitors employ hightemperature solder for connecting the capacitor element

nec jj8

Abstract: nec gJ8 NEC TOKIN TANTALUM CAPACITORS ne gJ8 NE y JE8 marking code je8 jN8 datasheet ne jn8 nec JS7 ne jj8
Contextual Info: 02 Correct Use of Chip Tantalum Capacitors Be sure to read this before using NEC TOKIN Tantalum Capacitors. [Notes] ● Be sure to read "Notes on Using The Solid Tantalum Capacitor" p33 - p43 and "Cautions" (p43) before commencing circuit design or using the capacitor.

nec eN8 capacitor

Abstract: ne jj8 marking code je8 nec jj8 ne8 je8 new jn8 ne jn8 NE y JE8 capacitor ne je8 nec en8
Contextual Info: Vol.02 C a p a c i t o r s Correct Use of Tantalum Chip Capacitors Be sure to read this before using NEC TOKIN Tantalum Capacitors. [Notes] ● Be sure to read "Notes on Using The Solid Tantalum Capacitor" p34 - p42 and "Cautions" (p43) before commencing circuit design or using the capacitor.

d424256

Abstract: PD424256 uPD424256 B31h D4242
Contextual Info: m ¿IPD424256 262,144 X 4-Bit Dynamic CMOS RAM e NEC E lectronics Inc. Description The ¡j PD424256 is a fast-page dynamic RAM organized as 262,144 words by 4 bits and designed to operate from a single + 5-volt power supply. Advanced polycide technology using trench capacitors minimizes silicon

VA140

Contextual Info: JJPD424102 4,194,304 X 1-Bit Dynamic CMOS RAM F l Mlí V NEC Electronics Inc. Pin Identification The pPD424102 is a static-column dynamic RAM orga­ nized as 4,194,304 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced polycide technology using trench capacitors mini­

NEC Tokin ultra low esr

Abstract: NEC tantalum capacitor
Contextual Info: TANTALUM CAPACITORS Description NEC TOKIN’s tantulum capacitors offer the designer advanced technological design and excellent performance c h a r a c t e r i s t i c s fo r f i l t e r i n g , by p a s s i n g , c o u p l i n g , decoupling, blocking, and R C timing circuits. They are

marking code B2 NEC

Abstract: NEC tantalum capacitor 104 TANTALUM capacitor nec date code marking NEC 105M C105 SVHA1A225M SVHB21A475M SVHC1A156M DIP capacitor tantalum electronic corporation
Contextual Info: DATA SHEET TANTALUM CAPACITOR SV/H SERIES SURFACE MOUNT RESIN MOLDED TANTALUM CHIP CAPACITORS HIGH RELIABILITY NEC’s SV/H series solid tantalum capacitor has developed for automotive application. Comparing to the former type R Series , the higher reliability and the higher performance have been built in the

83FM-6613A

Contextual Info: SEC NEC Electronics Inc. Description The /JPD424102 is a static-colum n dynam ic RAM orga­ nized as 4,194,304 words by 1 bit and designed to o p e ra te from a single + 5 -v o lt pow er supply. Advanced polycide technology using trench capacitors mini­ m izes silicon area and provides high s to ra g e cell c a ­

PG2415T6X-E2-A

Abstract: marking 6-PIN PLASTIC TSON HS350
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2415T6X 0.05 to 6.0 GHz SPDT SWITCH DESCRIPTION The μPG2415T6X is a GaAs MMIC SPDT Single Pole Double Throw switch for 0.05 to 6.0 GHz applications, including dual-band wireless LAN. This device operates with dual control switching voltages of 2.7 to 3.3 V. This device can operate at frequencies

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406TB 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406T6R 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from

HS350

Abstract: package T6R
Contextual Info: GaAs INTEGRATED CIRCUIT PG2406T6R 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406TK 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from

SW SPDT 6pin

Abstract: HS350
Contextual Info: GaAs INTEGRATED CIRCUIT PG2415TK 0.5 to 6.0 GHz SPDT SWITCH DESCRIPTION The μPG2415TK is a GaAs MMIC SPDT Single Pole Double Throw switch for 0.5 to 6.0 GHz applications, including dual-band wireless LAN. This device operates with dual control switching voltages of 2.7 to 5.3 V. This device can operate at frequencies

UPG2158T5K-E2-A

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2158T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2158T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from

Marking G2

Abstract: HS350
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2158T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2158T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2415T6X 0.05 to 6.0 GHz SPDT SWITCH DESCRIPTION The μPG2415T6X is a GaAs MMIC SPDT Single Pole Double Throw switch for 0.05 to 6.0 GHz applications, including dual-band wireless LAN. This device operates with dual control switching voltages of 2.7 to 3.3 V. This device can operate at frequencies

marking g3p

Abstract: HS350 VP215
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2030TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2030TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 2.7 to 3.0 V. This device can operate frequency from

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2030TK L, S-BAND SPDT SWITCH <R> DESCRIPTION The μPG2030TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and other L, S-band applications. This device can operate 2 control switching by control voltage 2.7 to 5.3 V, at frequencies from 0.5 to 2.5 GHz,