NEC B 924 L Search Results

EVLPFBA02641

Abstract: EVLPFBBX03641 EVLPFBCX02641 EVLPFBJ04641 evlpfbbx02641 s658 EVLPFBA03641 RD739 EVLPFBJ04521 EVLPFB0640
Contextual Info: Cl. I, Div. 1, Groups B GB Suffix , C, D Cl. I, Zone 1, Groups IIB + H2 (GB suffix), IIB, IIA Cl. II, Div. 1, Groups E, F, G; Class III, Simultaneous Presence EVLPFB Emergency Compact Fluorescent Continuous Operation Low Profile Luminaires Marine & Wet Locations

NE42484A

Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

DMVFB2TW052GP

Abstract: DMVFBJ064GP DMVFB2A064GP DMVFBJ084GP S826TB DMVFB2C064GP DMVFBP064GP DMVFB3TW084GP DMVFBJ052GP DMVFB2TW084GP
Contextual Info: Cl. I, Div. 2, Groups A, B, C, D Restricted Breathing Cl. I, Div. 2 & Zone 2 Suffix S826 Certified for IEC Zone 2 (Suffix S826TB) DMVFB Emergency Compact Fluorescent Continuous Operation Champ Luminaires Applications: DMVF Series Champ Lighting Luminaires

Contextual Info: 4 TH IS DRA W ING IS U N P U B L IS H E D . CO PYRIG HT 3 R E L E A S E D FO R P U B LIC A TIO N ALL RIGHTS R ESERVED . D C [.7 0 0 ] MAX A 1 4 7 1 -9 3 /1 1 R E VI SIO N S .0 D E S C R IP T IO N M1 DWN R E V IS E D PE R E C O - 1 1 - 0 0 4 8 2 0 APVD

CPMVS2W070

Abstract: induction lamp transistor Electronic ballast "INDUCTION LAMP" CPMVIG2W085 CPMVS1W070 S826TB CPMVM1W100 induction lamp ballast V2PC20 CPMVFB2W026
Contextual Info: Champ-Pak Wall Pack Luminares Cl. I, Div. 2, Groups A, B, C, D Restricted Breathing Cl. I, Div. 2 & Zone 2 Suffix S826 Certified for IEC Zone 2 (Suffix S826TB) Cl. II, Groups F, G Cl. III & Simultaneous Presence Marine & Wet Locations Enclosure Type 4X, IP66

2sa970

Abstract: 2SA564A 2SA906 2sa1015 2SA988 2SA904A 2SA1142 2SA1207 2sa949 2SA1038
Contextual Info: - 2SA 893A 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 894 895 896 89/ 898 ^ 899 ^ 900 / 901 2SA 902 ^ 2SA 903 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 904 905 ^ 906 ^ 912 913 913A 914 915 — 916 , 917 ^ 918 2SA 920 2SA 921 2SA 2SA 2SA 2SA 2SA 922 S 923 '' 924 925

ELPS502

Abstract: crouse-hinds exit emergency emergency light circuit diagram EVLA12 corrosion inhibitor ELPS50 Luminaire Photometric data circuit diagram of emergency light CID101 battery drill charger
Contextual Info: 10L ELPS Light-Pak Emergency Lighting System Applications: ELPS Series Emergency Lighting Systems are used: • To provide safe, reliable illumination indoors or outdoors to designated areas during failure or interruption of power to the normal lighting system

N2LPS12222

Abstract: crouse-hinds exit emergency N2RF1222 lamp emergency 10 watt L.E.D N2LPS12220 10 WATT LED "3 watt led" NFPA101 5 watt led
Contextual Info: Cl. I, Div. 2, Groups B, C, D Cl. I, Zone 2 Wet Locations, Marine NEMA 3, 3R, 4X Ambient 0ºC to 55ºC LED N2LPS LIGHT-PAK Emergency Lighting System Applications: LED N2LPS Light-Pak™ emergency lighting systems are used: • To provide reliable illumination for egress

D78 NEC

Abstract: spx 1404 DSPG 71051 MCM NAND VR10000 NEC 71055 986M
Contextual Info: CB-C10 2.5-Volt, 0.25-Micron drawn CMOS Cell-Based ASIC NEC Electronics Inc. Preliminary March 1997 Figure 1. Chip Size Package (CSP) Description NEC’s 0.25 µm drawn (0.18 µm L-effective) CB-C10 family incorporates ultra-high-performance cores with deep submicron process technology for high-end applications

transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and

TD032029EN

Contextual Info: Technical Data TD032033EN Effective January 2014 PS-DINAC-12DC-OK Power Supply Universal power supply for industrial applications Description PS-DINAC-12DC-OK Power Supply is a DIN rail–mounted 12 Vdc power supply, globally compatible with universal 85–264 Vac input

diode 4j

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2355, 2SK2355-2/2SK2356, 2SK2356-Z is N-Channel PACKAGE DIMENSIONS {in millimeter MOS Field Effect Transistor designed for high voltage switching

VMVM2A400GRD4

Abstract: VMVM2A250GR305 VMVS2A250GP VMVM2A250GRD4 VMVM2C400GRD4 VMVS2C250GP VMVM2C250GP vmvsj250gp VMVS2C400GP VMVM2A250GP
Contextual Info: VMV High Wattage Series 200-400W For Medium and High Mounting Heights Cl. I, Div. 2, Groups A, B, C, D Restricted Breathing Cl. I, Div. 2 & Zone 2 Suffix S826 Certified for IEC Zone 2 (Suffix S826TB) Champ H.I.D. Luminaires Cl. II, Groups E, F, G; Cl. III &

nec 424800

Abstract: RAS 0501
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿ P D 4 2 S 4 8 0 0 , 4 2 4 8 0 0 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800, 424800 are 524,288 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

D78 NEC

Abstract: 986M
Contextual Info: CB-C10 2.5-Volt, 0.25-M icron drawn CMOS Cell-Based ASIC NEC NEC Electronics Inc. Preliminary March 1997 Figure 1. Chip Size Package (CSP) Description NEC’s 0.25 n.m drawn (0.18 (j.mL-effective)CB-C10family incorporates ultra-high-performance cores with deep sub­

42s4800

Abstract: nec 42s4800
Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800, 424800 are 524,288 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

HP 8510

Abstract: rf up converter PC8109
Contextual Info: Application Note Usage and Application of µPC8106 and µPC8109 2.0-GHz Silicon Frequency Up Converter ICs for Mobile Communications Document No. P13683EJ1V0AN00 1st edition Date Published January 1999 N CP(K) 1999 Printed in Japan [MEMO] 2 The information in this document will be updated without notice.

EZ 929

Abstract: S1616
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ //¿PD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-W ORD B Y 16-BIT, FA ST P A G E M ODE, B Y T E READ/WRITE M O D E D escrip tion T h e ¿ iP D 4 2 S 1 6 1 6 0 L , 4 2 1 6 1 6 0 L , 4 2 S 1 6 1 6 0 L , 4 2 1 8 1 6 0 L a re 1,048, 576 w ord s by 16 b its C M O S d y n a m ic R A M s .

IE-78130-R

Abstract: Nec 78F0034 78f0034 78o5 LA 78045 78p054
Contextual Info: IE-78000-R/IE-78000-R-A 12. IE-78000-R/IE-78000-R-A The IE-78000-R and the IE-78000-R-A are development tool for effectively debugging hardware and software of application systems that use the 78K/0 Series 8-bit single-chip microcontrollers. The IE-78000-R and the IE-78000-R-A consist of the following hardware components.

EZ 923

Abstract: V907
Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT jjPD42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The /iPD42S16800L, 4216800L, 42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

pj 939 lv

Abstract: D780021 780023GC D780306 780024GC nec 0780021 pd7302 UPD780022 pj 939 NEC 8-BIT CONTROLLER LV DIGITAL DECODER
Contextual Info: PRELIMINARY PRODUCT INFORMATION NEC / MOS INTEGRATED CIRCI /¿ ¿ P D 7 8 0 0 2 1 , 7 8 0 0 2 2 , 7 8 0 0 2 3 ,7 8 0 0 2 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The juPD780021 , 780022, 780023, and 780024 are members of the ^PD780024 Subseries of the 78K/0 Series.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD78076Y, 78078Y 8-BIT SINGLE-CHIP MICROCONTROLLERS DESCRIPTION The ¿¡PD78076Y and 7 8 0 7 8 Y add the PC bus co n tro l fu n ctio n to the ¿¡PD78076 and 78078, and are su ita b le fo r a p p lica tio n in AV products.

UPD78F1845

Abstract: uPD78f1845 controller UPD78F18 U19672EE1V2AN00 78K0R/Fx3 frequency counter manuel circuits Self Programming 78k0r 78K0R IAR Program Examples
Contextual Info: Application Note 78K0R/Fx3 16-Bit Single-Chip Microcontroller Flash Memory Self Programming Document No. U19672EE1V2AN00 Date published May 2009 NEC Electronics 2009 Printed in Germany Legal Notes 2 • The information contained in this document is being issued in