NDP6020P Search Results

R6024

Abstract: NDB6020P NDP6020P zener diode 5v with reverse recovery time 1us NDP602
Contextual Info: September 1997 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -24 A, -20 V. RDS ON = 0.05 Ω @ VGS= -4.5 V. RDS(ON) = 0.07Ω @ VGS= -2.7 V. RDS(ON) = 0.075 Ω @ VGS= -2.5 V. These logic level P-Channel enhancement mode power field

NDB6020P

Abstract: NDP6020P
Contextual Info: N November 1996 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

Contextual Info: September 1997 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -24 A, -20 V. RDS ON = 0.05 Ω @ VGS= -4.5 V. RDS(ON) = 0.07Ω @ VGS= -2.7 V. RDS(ON) = 0.075 Ω @ VGS= -2.5 V. These logic level P-Channel enhancement mode power field

zener diode 5v with reverse recovery time 1us

Abstract: 201U-S R6024 NDB6020P NDP6020P
Contextual Info: September 1997 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -24 A, -20 V. RDS ON = 0.05 Ω @ VGS= -4.5 V. RDS(ON) = 0.07Ω @ VGS= -2.7 V. RDS(ON) = 0.075 Ω @ VGS= -2.5 V. These logic level P-Channel enhancement mode power field

Contextual Info: F A I R C H September 1997 I L D SEM IC ONDUCTO R tm NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -24 A, -20 V. Rds on = 0.05 £2 @ VGS= -4.5 V. RDS(0N) = 0.07£2 @ VGS= -2.7 V. Rds(0N) = 0.075 £2 @ VGS= -2.5 V.

ndp602dp

Abstract: NDB6020P NDP6020P EFB810-3/4-3/NDP6020P
Contextual Info: |R C H | September 1997 SEM ICONDUCTÜR tm NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,

Diode lt 725

Abstract: P6020P
Contextual Info: Sept mber 1997 s e m ic d n d u c t o r NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,

SL-1-C1-0R050L

Contextual Info: ANALOG ► DEVICES Precision Voltage Regulator Controller ADP3310 FEATURES ±1.5% Accuracy Over Line, Load and Temperature Low Power BiCMOS: 800 |*.A Quiescent Current Shutdown Current: 1 |j.A Typical Stable with 10 |iF Load Capacitor +2.5 V to +15 V Operating Range

IRF74D

Abstract: 2N39D6 rfid based toll tax ADP3328 ADP33 329d IRF74D4 IRF7404 NDP602 ADP3319
Contextual Info: DEVICES FAX-aN-DEMAND HOTLINE - Page r-. ANALOG ~ DEVICES PrecisionVoltage RegulatorController ADP3310 FEATURES :!:1.5% Accuracy Over Line, Load and Temperature Low gOOJ.1A Typical! Quiescent Current Shutdown Current: 1 J.1A(Typical! Stable with 10 J.1FLoad Capacitor

LM2975

Abstract: l46b voltage regulator l46A lm2975ai-x.x L45A lm297 LM2975AI-X LP2975AIM
Contextual Info: LP2975 www.ti.com SNVS006E – MAY 2004 – REVISED JUNE 2011 MOSFET LDO Driver/Controller Check for Samples: LP2975 FEATURES DESCRIPTION • • • • • • A high-current LDO regulator is simple to design with the LP2975 LDO Controller. Using an external P-FET,

NDP6020P

Abstract: ADP3328 ADP3328AR "Precision Voltage Regulator" ADP3310 ADP3310AR-3 ADP3310AR-5 ADP3319 ADP3319AR-1 ADP3319AR-2
Contextual Info: a Precision Voltage Regulator Controller ADP3310 FEATURES ؎1.5% Accuracy Over Line, Load and Temperature Low Power BiCMOS: 800 ␮A Quiescent Current Shutdown Current: 1 ␮A Typical Stable with 10 ␮F Load Capacitor +2.5 V to +15 V Operating Range Fixed Output Voltage Options: 2.8 V, 3 V, 3.3 V, 5 V

FDC6331

Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
Contextual Info: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

12SnOFC

Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
Contextual Info: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will

IC 4090

Abstract: data sheet IC 4090
Contextual Info: a Lithium-Ion Battery Charger ADP3820 FUNCTIONAL BLOCK DIAGRAM FEATURES ؎1% Total Accuracy 630 ␮A Typical Quiescent Current Shutdown Current: 1 ␮A Typical Stable with 10 ␮F Load Capacitor 4.5 V to 15 V Input Operating Range Integrated Reverse Leakage Protection

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

LM2975

Abstract: LM297 L45A 6100B RSC11 fpg 12v L47B ic MARKING FZ LP2975 LP2975AIMMX-12
Contextual Info: LP2975 MOSFET LDO Driver/Controller General Description Features A high-current LDO regulator is simple to design with the LP2975 LDO Controller. Using an external P-FET, the LP2975 will deliver an ultra low dropout regulator with extremely low quiescent current.

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

FQP630

Abstract: FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A
Contextual Info: Discrete MOSFET TO-220 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220 N-Channel ISL9N302AP3 30 Single 0.0025 0.0033 - - 110 75 345 FDP8030L 30 Single 0.0035 0.0045

LM2975

Abstract: lm297 L45A l45b l47a l46A voltage regulator l46A L46B l47B LP2975AIMM-12
Contextual Info: LP2975 MOSFET LDO Driver/Controller General Description Features A high-current LDO regulator is simple to design with the LP2975 LDO Controller. Using an external P-FET, the LP2975 will deliver an ultra low dropout regulator with extremely low quiescent current.

panasonic inverter dv 707 manual

Abstract: al 12 fc battery drill charger panasonic inverter manual dv 707 cd 1619 CP fm radio Sharp amplifier SM 30 panasonic inverter dv 707 panasonic parameter inverter dv 707 manual LM 358 battery charger schematic 12v 10A lithium ion car battery charger wiring diagram 220v ac to 5V dc power supply using 7805 regulato
Contextual Info: PRACTICAL DESIGN TECHNIQUES FOR POWER AND THERMAL MANAGEMENT BOOST V IN O ^ SWITCH V|N +7V TO +24V +5V @ 1A A D P3050-5 BIAS ON FB GND COMP 22|xF 4 k il 1nF 100|xF * V|N anyCAP LDO TOPOLOGY C COMP NONINVERTING W IDEBAND DRIVER Rl 3415 American Drive Mississauga, Ontario,LAV TT4