NCE50 Search Results
NCE50 Datasheets (10)
NCEPOWER
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
NCE50TD120WW
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NCEPOWER | 1200V, 50A Trench FSII fast IGBT with low VCE(sat), high-speed switching, positive temperature coefficient, and integrated diode in TO-264 package. | Original | ||||
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NCE5020Q
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NCEPOWER | NCE5020Q is an N-Channel Enhancement Mode Power MOSFET with 50V drain-source voltage, 20A continuous drain current, and low RDS(ON) of 11.5mΩ typical at VGS=10V, housed in a DFN3.3x3.3-8L package. | Original | ||||
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NCE50TD120BT
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NCEPOWER | 1200V, 50A Trench FSII Fast IGBT with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution in a TO-247 package. | Original | ||||
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NCE50TD120BP
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NCEPOWER | 1200V, 50A Trench FSII Fast IGBT with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution in a TO-3P package. | Original | ||||
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NCE50TD120WT
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NCEPOWER | 1200V, 50A Trench FSII Fast IGBT in TO-247 package featuring low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution for welding and industrial applications. | Original | ||||
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NCE50TD120VTP
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NCEPOWER | 1200V, 50A Trench FSII Fast IGBT in TO-247P package with low VCE(sat), high-speed switching, positive temperature coefficient, and integrated diode for PV, solar inverters, and UPS applications. | Original | ||||
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NCE5015S
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NCEPOWER | NCE5015S N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 15A continuous drain current, and low on-resistance of 7.6mΩ at 10V gate-source voltage, suitable for power switching and load switch applications. | Original | ||||
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NCE5055K
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NCEPOWER | NCE5055K is an N-Channel Enhancement Mode Power MOSFET with 50V drain-source voltage, 55A continuous drain current, and low on-resistance of 12mΩ at VGS=10V, utilizing trench technology for high efficiency and thermal performance in switching applications. | Original | ||||
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NCE5080K
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NCEPOWER | NCE5080K N-Channel Enhancement Mode Power MOSFET with 50V drain-source voltage, 80A continuous drain current, RDS(ON) less than 7.5mΩ at VGS=10V, and low gate charge for high-frequency switching applications. | Original | ||||
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NCE50TD120VT
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NCEPOWER | 1200V, 50A Trench FSII Fast IGBT with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution in a TO-247 package. | Original |