NC 1602 A Search Results

SST39WF160x

Abstract: SST39WF1601-90-4C-B3K SST39WF1601-90-4I-B3KE SST39WF1601 SST39WF1602
Contextual Info: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories Preliminary Specifications FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)

a103 636 transistor

Abstract: BF274 SST39WF1601-90-4C-MBQE SST39WF1601 SST39WF1602
Contextual Info: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)

SST39WF1601

Abstract: SST39WF1602
Contextual Info: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)

Contextual Info: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 Data Sheet The SST39WF1601 / SST39WF1602 are a 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) devices manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate

39vf3201

Abstract: 39vf1601 39vf1601 70-4c-eke 39VF3202 39vf1602 39vf160 39VF6401 xx029 S71223-04-000 SST39VF1601
Contextual Info: 16 Mbit / 32 Mbit / 64 Mbit x16 Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 / SST39VF6401 SST39VF1602 / SST39VF3202 / SST39VF6402 SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16: SST39VF1601/1602

39vf3201

Abstract: 39vf1602 39vf1601 sst39vf1602 SST39VF160X S71223-05-000 SST39VF1601 SST39VF1601-70-4C-B3KE sst39vf1601-70-4c-eke SST39VF1602-70-4C-EKE
Contextual Info: 16 Mbit / 32 Mbit / x16 Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16: SST39VF1601/1602 2M x16: SST39VF3201/3202

Contextual Info: WPS128K32V-XPJC WHITE /VI IC ROE LECT RON IC S 128Kx32 SRAM MODULE ADVANCED* FEATURES • A ccess T im es o f 1 5 ,1 7 , 20, 25ns ■ Packaging ■ ■ Fully S ta tic O p e ra tio n : • 6 8 - le a d , P la stic PLCC, 2 5 .15 mm 0.990 inch square ■ Three S ta te O utputs

Alps Electric vco

Abstract: Alps Electric vco vco alps vco pin db25 AN885 L1 1SV229 AN-1001 AN-885 LMX1600
Contextual Info: PLLATINUM EVALUATION BOARD LMX1600/1601/1602 INTRODUCTION In order to assist in your evaluation of National Semiconductor's LMX160X series dual PLL, a blank printed circuit board is included with this product sample kit. The PCB is designed to reduce the time required to construct a

LCD 1602 display

Abstract: jrc 2360 supply JRC 2360 LCD 1602 2360 JRC LCD 1602 INTERFACE LCD display 1602 1602 lcd 1602 E lcd lcd 1602 a
Contextual Info: NJ U6 580 PRELIMINARY BIT MAP LCD DRIVER • G E N E R A L D E S C R IP T IO N ■ The N JU 6580 is a bit map LCD driver to display graphics characters. P A C K A G E O U T LIN E or It contains 1,904 bits display data RAM, microprocessor inter face circuits, instruction decoder, 96-segm ent and 17-common 1

FM PLL

Abstract: lcd 1602 g DIODE 38 S9 1602 lcd ph3sd SD 1602 lcd DIODE S4 2G LCD 1602 LCD display 1602 LCD p 1602 5b
Contextual Info: Ordering number : ENN*6633 LC72348G-9970 CMOS IC LC72348G-9970 Portable Stereo Software Specifications Preliminary Package Dimensions The LC72348G-9970 is a single chip controller designed unit : mm for portable stereo applications. 3231-QIP64G It incorporates an AM / FM PLL tuner covering the frequency

F2M1

Contextual Info: !. es 2Mx16 5V FLASH MODULE W F 2 M 1 6 -X X X 5 ADVANCED1 FEATURES • Access Time of 9 0 ,1 2 0 ,150ns Low Po w er C M O S ■ Packaging: Data Polling and Toggle Bit feature for detection of program or erase cycle completion. • 66-pin, PGA Type, 1.185 inch square, Herm etic Ceramic

WPS512K8-15RJM

Contextual Info: WHITE MICROELECTRONICS pî ÿ" A division ofBm m ar Instrument Corp. This facsimile contains information which (a may be LEGALLY PRIVILEGED, PROPRIETARY IN NATURE, OR OTHERWISE PROTECTED BY LAW FROM DISCLOSURE, and (b) is intended only for the use of the Addressee is) named below.

Contextual Info: N ICS 2Mx32 5V FLASH S IM M WPF2M32X-90PSC5 PRELIMINARY* FEATURES • Access Time of 90ns 100,000 Erase/Program Cycles ■ Packaging: Organized as 2Mx32 • 80-pin SIM M Commercial Temperature Range • The module is manufactured with four 2Mx8 CMOS Flash

Contextual Info: ! WPF512K32-90PSC5 H/HITE / M I C R O E L E C T R O N I C S 512Kx32 5V FLASH SIM M PR E LIM IN A R Y ' FEATURES • A c c e s s Tim e of 9 0 n s ■ O rganize d as 5 1 2 K x3 2 ■ Packaging: ■ C om m ercial Tem perature R a n ge • 80 -p in S I M M ■

Contextual Info: i CS 512Kx32 5V FLASH MODULE WPF512K32-60PJC5 P R E L IM IN A R Y * FEATURES • Maximum Access Time of 60ns ■ Commercial 0-70°C Range ■ Packaging ■ 5 Volt Programming. 5V ± 10% Supply ■ Low Power CMOS, 500|iA Standby • 68-lead, Plastic PLCC, 25.15 mm 0.990 inch square

Contextual Info: Ordering number:EN5939 P-Channel MOS Silicon FET CPH6302 Isa / I yoi Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. • Ultrahigh-speed switching. • 4V drive. unit: mm 2151 [CPH6302] 0.15. 2.9 6 5 4 .Oto 0.1 O U

32B-XXX3

Contextual Info: WHITE /M IC ROELECTRONIC S 1Mx32 3.3V FLASH MODULE A D V A N C ED * FEATURES Boot Code Sector A rchitecture: B = Bottom Sector Low Pow er CM O S, 1.0mA Standby • A ccess Tim es of 100, 120, 150ns ■ Packaging • 66-pin, PGA Type, 1.185 inch square. Herm etic Ceram ic

CuZn39Pb3

Abstract: m3x0.5 wj 6h 500-1802 R30-5000402 R30-5002002 R30-5005502
Contextual Info: Customer Information Sheet DRAWING No. : SHEET R 3 0 - 500XX02 2 OF 2 | IF IN DOUBT LI ALL SPACERS INCLUDING 2 5 mm THE MUST SPACER TAPPED UP 2 5 mm DOES HOLE TO BE ASK | TO 1 2 mm ± 0 . 1 0 OVER 1 2 mm ± 0 . H f NOT TO SCALE | THIRD ANGLE ALL P R O J E C T I O N |

FT2M

Abstract: erfa rs232-C pin out Monitor07 fitel amplifier
Contextual Info: Data Sheet ErFA 3300 Series February, 2000 FT2M -0007 Fully Digitized MPU Controlled EDFA ERFA 3300 Series Applications • Optical amplifier for D-WDM network Inline amplifier / Booster amplifier • Booster amplifier for optical CATV network Description

Contextual Info: RECTIFIER DIODES, Ultra Fast Recovery, Plastic Package IS * P a rt Num ber Maximum Average Rectified Peak inverse Voltage i0 Amps mm PIV (Volts M axim um Peak Forward Surge Currant Fwd Voltage g 8 .3ms gR ated f. Superimposed SAd Ti * i S ° C lf . , (Amps)

HY 1602

Contextual Info: y j M/HITE MICROELECTRONICS 512Kx8 SRAM P R E LIM IN A R Y WPS512K8-XRJX ’ PLASTIC PLUS FEATURES FIG. 1 • Access Times of 15, 20, 25nS PIN C O N FIG U R ATIO N TOP VIEW AOC 1 ' W ■ Standard Commercial Off-The-Shelf (COTS Memory Devices for Extended Temperature Range

EPC1001

Abstract: EPC Gan transistor
Contextual Info: DATASHEET EPC1001 EPC1001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

lt 6208

Abstract: a966 y A-966 A966 602B A347 7847m
Contextual Info: #$%&#' # %&'%(# %,%&%.*/# * ,%( * ,# 3. &3' /# ,( ' % 0(, 0 '&$ %,.*(' !"#$ %&'( '*$ +,-.$ /01#23-1#.$ &455,067-1640$ &4013488#3$ 9+:/&&;$ 6<$ =8#>6?8#$ <6028# 7"6A$ 56734A347#<<43B$ 601#23-1#.$ C61"$ -0$ -33-D$ 4=$ A#36A"#3-8<

EPC1005

Abstract: EPC Gan transistor
Contextual Info: DATASHEET EPC1005 EPC1005 – Enhancement Mode Power Transistor VDSS , 60 V RDS ON , 7 mW ID , 25 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure