NC 1350 Search Results
NC 1350 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 54242-808081350LF |
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BergStik®, Board to Board connector, Unshrouded vertical stacked header, Surface Mount, Double Row, 8 Positions, 2.54mm (0.100in) Pitch. | |||
| 76341-350HLF |
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Dubox® 2.54mm, Board to Board Connector, PCB mounted Receptacle, Vertical, Through Hole, Top Entry, Single row , 50 Positions, 2.54mm (0.100in) Pitch. | |||
| 54121-407021350LF |
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BergStik®, Board to Board connector, Unshrouded vertical stacked header, Through Hole, Single Row, 2 Positions, 2.54mm (0.100in) Pitch. | |||
| 54242-807061350LF |
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BergStik®, Board to Board connector, Unshrouded vertical stacked header, Surface Mount, Double Row, 6 Positions, 2.54mm (0.100in) Pitch. | |||
| 10135064-003LF |
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PwrMAX® Power Connector, Right Angle, Plug, 2HP+24S+2HP |
NC 1350 Price and Stock
SiTime Corporation SIT3372AC-1B3-33NC135.000000MEMS OSC VCXO 135.0000MHZ LVPECL |
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SIT3372AC-1B3-33NC135.000000 | 1 |
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SiTime Corporation SIT3372AC-1E9-30NC135.000000MEMS OSC VCXO 135.0000MHZ LVPECL |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIT3372AC-1E9-30NC135.000000 | 1 |
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SiTime Corporation SIT3372AI-2B9-30NC135.000000MEMS OSC VCXO 135.0000MHZ LVDS |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIT3372AI-2B9-30NC135.000000 | 1 |
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SiTime Corporation SIT3372AC-4E2-33NC135.000000MEMS OSC VCXO 135.0000MHZ HCSL |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIT3372AC-4E2-33NC135.000000 | 1 |
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SiTime Corporation SIT3372AI-2E3-30NC135.000000MEMS OSC VCXO 135.0000MHZ LVDS |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIT3372AI-2E3-30NC135.000000 | 1 |
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NC 1350 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TOP VIEW Not to Scale 8 +VS FB 2 7 OUT –IN 3 6 NC +IN 4 5 –VS 07040-001 PD 1 NC = NO CONNECT Figure 1. 8-Lead LFCSP (CP) ADA4857-1 FB 1 8 PD –IN 2 7 +VS +IN 3 6 OUT –VS 4 5 NC NC = NO CONNECT 07040-002 TOP VIEW (Not to Scale) Figure 2. 8-Lead SOIC (R) |
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16-lead ADA4857-1/ADA4857-2 ADA4857-1 CP-16-4 | |
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Contextual Info: SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.28 76 Qgs (nC) 11 Qgd (nC) 17 Configuration Single D APPLICATIONS |
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SiHA15N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.28 78 Qgs (nC) 9 Qgd (nC) 17 Configuration Single APPLICATIONS D |
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SiHF15N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.28 76 Qgs (nC) 11 Qgd (nC) 17 Configuration Single D APPLICATIONS |
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SiHA15N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.28 78 Qgs (nC) 9 Qgd (nC) 17 Configuration Single APPLICATIONS D |
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SiHF15N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.28 76 Qgs (nC) 11 Qgd (nC) 17 Configuration Single D APPLICATIONS |
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SiHA15N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SIHF15N60E
Abstract: sihf15n60e-e3 smps 220 - s12 SIHF15n60
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SiHF15N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sihf15n60e-e3 smps 220 - s12 SIHF15n60 | |
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Contextual Info: SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.28 78 Qgs (nC) 9 Qgd (nC) 17 Configuration Single D TO-220 FULLPAK |
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SiHF15N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
U860 diode
Abstract: diode U860 diode avalanche DSA U860 tc 40138 DIODE DSA 18 diode avalanche DSA VRRM 2300 DSA VRRM 2300 G DSA 908-44 A G diode avalanche DSA 603
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OCR Scan |
00Mfl3Dfl To-50Â 400-11KC, D2950 U860 diode diode U860 diode avalanche DSA U860 tc 40138 DIODE DSA 18 diode avalanche DSA VRRM 2300 DSA VRRM 2300 G DSA 908-44 A G diode avalanche DSA 603 | |
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Contextual Info: SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.28 Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) 17 Configuration Single D TO-220 FULLPAK |
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SiHF15N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17 |
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SiHB15N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.28 78 Qgs (nC) 9 Qgd (nC) 17 |
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SiHB15N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17 |
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SiHB15N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17 |
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SiHP15N60E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.28 78 Qgs (nC) 9 Qgd (nC) 17 |
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SiHP15N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17 |
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SiHP15N60E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.28 78 Qgs (nC) 9 Qgd (nC) 17 |
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SiHP15N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.28 78 Qgs (nC) 9 Qgd (nC) 17 Configuration |
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SiHP15N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Low figure-of-merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) • • • • • 0.28 78 Qgs (nC) 9 Qgd (nC) 17 Configuration |
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SiHB15N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17 |
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SiHB15N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17 |
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SiHP15N60E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
sihf15n60e-e3
Abstract: s13002
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SiHF15N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 sihf15n60e-e3 s13002 | |
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Contextual Info: 1800 MHz to 2700 MHz, 1 W RF Driver Amplifier ADL5606 Data Sheet 14 NC 15 NC 16 NC Operation from 1800 MHz to 2700 MHz Gain of 24.3 dB at 2140 MHz OIP3 of 45.5 dBm at 2140 MHz P1dB of 30.8 dBm at 2140 MHz Noise figure of 4.7 dB at 2140 MHz Power supply: 5 V |
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16-lead ADL5605 ADL5606 ADL5606ACPZ-R7 ADL5606-EVALZ 4-06-2012-A CP-16-10 | |
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Contextual Info: 700 MHz to 1000 MHz, 1 W RF Driver Amplifier ADL5605 Data Sheet 16 NC 15 NC 13 NC FUNCTIONAL BLOCK DIAGRAM Operation from 700 MHz to 1000 MHz Gain of 23 dB at 943 MHz OIP3 of 44.2 dBm at 943 MHz P1dB of 30.9 dBm at 943 MHz Noise figure of 4.8 dB at 943 MHz |
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ADL5605 16-lead ADL5606 CP-16-10) ADL5605ACPZ-R7 ADL5605-EVALZ CP-16-10 | |