NATIONAL SEMICONDUCTOR MARKING CODE SOD Search Results
NATIONAL SEMICONDUCTOR MARKING CODE SOD Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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SCC433T-K03-004 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor | |||
MRMS791B | Murata Manufacturing Co Ltd | Magnetic Sensor | |||
SCC433T-K03-05 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor | |||
SCC433T-K03-PCB | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board | |||
D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR |
NATIONAL SEMICONDUCTOR MARKING CODE SOD Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Diode CapacitanceContextual Info: BAT15V-02V VISHAY Vishay Semiconductors Schottky Diodes Mechanical Data Case: Plastic case SOD 523 Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box A Description Designed for RF-signal level detection and RF-mixer |
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BAT15V-02V BAT15V02V OD523 D-74025 26-Sep-02 Diode Capacitance | |
Diode CapacitanceContextual Info: BAT15V-02V VISHAY Vishay Semiconductors Schottky Diodes Description Designed for RF-signal level detection and RF-mixer application the low barrier Schottky Diode BAT15V02V can be used in wireless and mobile systems up to 12 GHz. The small space saving SOD523 package is a contribution to the continuously growing integration density |
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BAT15V-02V BAT15V02V OD523 D-74025 24-Sep-03 Diode Capacitance | |
BAR63V-02V
Abstract: BAR63V-02V-GS08
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BAR63V-02V BAR63V-02V OD523 D-74025 23-Oct-02 BAR63V-02V-GS08 | |
85639Contextual Info: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode Mechanical Data Case: Plastic case SOD 523 Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box A Description Characterized by a very low reverse Capacitance the |
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BAR63V-02V BAR63V-02V D-74025 26-Sep-02 85639 | |
Contextual Info: VESD05A1B-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 e3 > 20 kV contact discharge > 30 kV air discharge • Tiny SOD923 package • Package height = 0.4 mm • Typ. capacitance 12 pF VR = 2.5 V; f = 1 MHz |
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VESD05A1B-02Z OD923 OD923 2002/95/EC 2002/96/EC VESD05A1B-02Z VESD05A1B-02Z-GS08 08-Apr-05 | |
Contextual Info: VESD05A1B-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • • • • • • • • • • • Single-line ESD-Protection device ESD-Immunity acc. IEC 61000-4-2 e3 > 20 kV contact discharge > 30 kV air discharge Tiny SOD923 package |
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VESD05A1B-02Z OD923 OD923 2002/95/EC 2002/96/EC VESD05A1B-02Z VESD05A1B-02Z-GS08 08-Apr-05 | |
Contextual Info: VESD05A1B-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-Protection device • ESD-Immunity > 20 kV e3 IEC 61000-4-2 contact discharge • Tiny SOD923 package • Package Height = 0.4 mm • Typ. capacitance 12 pF (VR = 2.5 V; f = 1 MHz) |
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VESD05A1B-02Z OD923 OD923 2002/95/EC 2002/96/EC VESD05A1B-02Z VESD05A1B-02Z-GS08 08-Apr-05 | |
VESD05A1B-02Z-GS08Contextual Info: VESD05A1B-02Z Vishay Semiconductors ESD-Protection Diode Array in SOD923 Features • Single-line ESD-Protection device • ESD-Immunity > 20 kV e3 IEC 61000-4-2 contact discharge • Tiny SOD923 package • Package Height = 0.4 mm • Typ. capacitance 12 pF (VR = 2.5 V; f = 1 MHz) |
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VESD05A1B-02Z OD923 OD923 2002/95/EC 2002/96/EC VESD05A1B-02Z VESD05A1B-02Z-GS08 VESD05A1B-0s 08-Apr-05 | |
BA892V-02V-GS08
Abstract: BA892V-02V
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BA892V-02V BA892V-02V BA892V02V D-74025 26-Sep-02 BA892V-02V-GS08 | |
Contextual Info: BAR64V-02V VISHAY Vishay Semiconductors RF PIN Diode Mechanical Data Case: Plastic case SOD 523 Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box A Description Characterized by low reverse Capacitance the PIN |
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BAR64V-02V BAR64V-02V D-74025 26-Sep-02 | |
BAR65V-02V
Abstract: BAR65V-02V-GS08
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BAR65V-02V BAR65V-02V OD523 D-74025 23-Oct-02 BAR65V-02V-GS08 | |
BAR64V-02V
Abstract: BAR64V-02V-GS08
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BAR64V-02V BAR64V-02V OD523 D-74025 23-Oct-02 BAR64V-02V-GS08 | |
BAT15V-02V
Abstract: Diode Capacitance
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BAT15V-02V BAT15V02V OD-523 D-74025 27-Apr-04 BAT15V-02V Diode Capacitance | |
BAS581-02V-GS08Contextual Info: BAS581-02V VISHAY Vishay Semiconductors Schottky Diode in SOD-523 Features • These diodes feature very low turn-on voltage and fast switching. • Space saving SOD-523 package 1 1 2 Mechanical Data Case:SOD-523 Plastic Package Molding Compound Flammability Rating: |
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BAS581-02V OD-523 OD-523 BAS581-02V BAS581-02V-GS08 D-74025 02-Dec-03 | |
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Contextual Info: BAR65V-02V VISHAY Vishay Semiconductors RF PIN Diode Mechanical Data Case: Plastic case SOD 523 Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box A Description With the very low forward resistance combined with a |
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BAR65V-02V BAR65V-02V D-74025 26-Sep-02 | |
BAR63V-02V
Abstract: BAR63V-02V-GS08 BAR63V-02V-GS18
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BAR63V-02V OD-523 BAR63V-02V OD-523 D-74025 25-Aug-04 BAR63V-02V-GS08 BAR63V-02V-GS18 | |
BAR63V-02V
Abstract: BAR63V-02V-GS08 BAR63V-02V-GS18
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BAR63V-02V OD-523 BAR63V-02V OD-523 2002/95/EC 2002/96/EC D-74025 29-Jun-05 BAR63V-02V-GS08 BAR63V-02V-GS18 | |
Contextual Info: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than |
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BAR63V-02V OD-523 BAR63V-02V OD523 D-74025 12-Sep-03 | |
Contextual Info: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description 1 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than |
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BAR63V-02V OD-523 BAR63V-02V OD523 D-74025 12-Dec-03 | |
Contextual Info: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description 1 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than |
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BAR63V-02V OD-523 BAR63V-02V OD523 D-74025 24-Nov-03 | |
Contextual Info: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description 1 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than |
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BAR63V-02V OD-523 BAR63V-02V OD-523 OD-523) D-74025 26-Apr-04 | |
Contextual Info: BAS40-02V VISHAY Vishay Semiconductors Schottky Diode in SOD-523 Features • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. |
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BAS40-02V OD-523 OD-523 BAS40-02V BAS40-02V-GS08 D-74025 02-Dec-03 | |
BAS581-02V
Abstract: BAS581-02V-GS18
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BAS581-02V OD-523 2002/95/EC 2002/96/EC BAS581-02V-GS18 BAS581-02V-GS08 D-74025 29-Jun-05 BAS581-02V | |
Contextual Info: BAR65V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description With the very low forward resistance combined with a low reverse capacitance the BAR65V-02V is ideal for RF-signal switching. Depending on the forward current If the forward resistance (rf) can be reduced to |
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BAR65V-02V OD-523 BAR65V-02V OD523 D-74025 12-Sep-03 |