NAND FLASH DQS Search Results

MT29C2G24MAKLAJG-75 IT

Abstract: MT29C2G24MAKLAjg JW256
Contextual Info: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components

MT29C1G24MADLAJA-6

Abstract: Micron 512MB nand FLASH MT29C2G24MAKLAJA-6 Micron 512MB nand FLASH mcp Flash MCp nand DRAM 137-ball JW190 137-Ball MCP NAND sDR mt29c 1g nand DDR mcp
Contextual Info: Preliminary‡ Micron Confidential and Proprietary 137-Ball NAND Flash with LP-DRAM MCP Features NAND Flash with LP-DRAM 137-Ball Multiple-Chip Package MCP MT29CxGxxMAxxxJA Current Production Part Numbers: Table 1 on page 2 Features Figure 1: • All-Micron NAND Flash and LP-DRAM

MT29C2G24m

Abstract: MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD
Contextual Info: Preliminary‡ 168-Ball NAND Flash and LP-DRAM PoP TI-OMAP MCP Features NAND Flash and LP-DRAM 168-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package

MT29C1G12

Abstract: mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1
Contextual Info: Preliminary‡ 152-Ball NAND Flash and LP-DRAM PoP TI OMAP MCP Features NAND Flash and LP-DRAM 152-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package

BGA 130 MCP NAND DDR

Abstract: JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball
Contextual Info: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information

Contextual Info: EN71SN10E EN71SN10E 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 256-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage

Contextual Info: EN71SN10E EN71SN10E 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 256-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage

Contextual Info: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage

Contextual Info: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage

MT29C4G48MAZAPAKQ-5

Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,

MT29F4G08ABA

Abstract: MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96
Contextual Info: Preliminary‡ Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,

Micron NAND

Contextual Info: Micron Confidential and Proprietary 16Gb, 32Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08CBACA, MT29F32G08CFACA, MT29F16G08CBACB, MT29F32G08CFACB • Operation status byte provides software method for detecting – Operation completion

MT29F32G08

Abstract: MT29F64G08 MT29F32G08A MT29F16G08ABABA MT29F16G08ABABAWP MT29F128G08A MT29F64G08A mt29f128g08 MT29F16G08ABA MT29F16G08A
Contextual Info: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb, 128Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABABA, MT29F32G08AFABA, MT29F64G08A[J/K/M]ABA, MT29F128G08AUABA, MT29F16G08ABCBB, MT29F32G08AECBB, MT29F64G08A[K/M]CBB, MT29F128G08AUCBB

MT29F16G08ABACA

Abstract: MT29F16G08ABACAWP 64gb NAND chip MT29F32G08afacawp MT29F32G08AFACA MT29F64G08 M72A micron nand flash chip 16gb MT29F16G08ABCCBH1-10ITZ:C TR MT29F16G08AB
Contextual Info: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous

Contextual Info: MS29C4G48MAZAKC1-XX 4Gb NAND FLASH x16 / 2Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION  Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.

Contextual Info: MS29C4G48MAZAKC1-XX *PRELIMINARY 4Gb NAND FLASH x16 / 2Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION  Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.

MT29C2G24MAKLA-XIT

Abstract: mt29C2G24
Contextual Info: MS29C2G24MAKLA1-XX 2Gb NAND FLASH x16 / 1Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION  Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.

29f32g08

Abstract: MT29F64G08C MT29F32G08CBABA MT29F128G08C MT29F32G08C MT29F256G08 MT29F32G08CBABAWP MT29F32G08CB 29F32G mt29f32g08cba
Contextual Info: Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08CBABA, MT29F64G08C[E/F]ABA, MT29F128G08C[J/K/M]ABA, MT29F256G08CUABA, MT29F32G08CBABB, MT29F32G08CBCBB, MT29F64G08CFABB, MT29F64G08CECBB, MT29F128G08CJABB,

MT29F8G08aba

Abstract: MT29F8G08A MT29F8G08ABABAWP MT29F8G08ABABA MT29F8G08ABAB MT29F8G08ab MT29F8G08ABCBB 29f8g08 MT29F8G08ABCBBH1 MT29F8G08ABABAW
Contextual Info: Micron Confidential and Proprietary 8Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F8G08ABABA, MT29F8G08ABCBB • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status

MT29F8G08ABABA

Abstract: MT29F8G08ABABAWP MT29F8G08aba MT29F8G08A MT29F8G08ab 29f8g08 Micron NAND flash M61A 8gb FLASH DRIVE 00H-31H
Contextual Info: Micron Confidential and Proprietary 8Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F8G08ABABA, MT29F8G08ABCBB Features • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status

MT29F64G08

Abstract: MT29F256G08 mt29f128g08 29F64G08 MT29F64G08CBAA MT29F64G08CB MT29F128 MT29F128G08CFAAB MT29F64G08cba MT29F64G
Contextual Info: Micron Confidential and Proprietary 64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F64G08CBAA[A/B], MT29F128G08C[E/F]AAA, MT29F128G08CFAAB, MT29F256G08C[J/K/M]AAA, MT29F256G08CJAAB, MT29F512G08CUAAA, MT29F64G08CBCAB, MT29F128G08CECAB, MT29F256G08C[K/M]CAB,

MT29F128G08CFABA

Abstract: Micron 512gb nand FLASH MT29F128G08CECBB MT29F64G08CBCB MT29F64G08 MT29F512G MT29F64G08cba MT29F256G08CJABA MT29F128G08CFABB 256gb toggle nand
Contextual Info: Micron Confidential and Proprietary Advance‡ 64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND Features NAND Flash Memory Features • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status

SAMSUNG MCP

Abstract: 7a7l MCP MEMORY K5D1G58KCM-D090 nand sdram mcp
Contextual Info: Preliminary MCP MEMORY K5D1G58KCM-D090 Document Title Multi-Chip Package MEMORY 1G Bit 128Mx8 Nand Flash / 256M Bit (2Mx32x4Banks) Mobile SDRAM Revision No. History Draft Date 0.0 Initial issue. - 1Gb NAND A-Die_ Ver 0.3 - 256Mb Mobile SDRAM F-Die_Ver 1.1

SAMSUNG MCP

Abstract: F407 KBE00D002M-F407 samsung "nor flash" sensing UtRAM Density 137FBGA
Contextual Info: Advance Preliminary MCP MEMORY KBE00D002M-F407 Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 128M Bit (2Mx16x4Banks) Mobile SDRAM*2 Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. - 512M NAND DDP C-Die_ ver 1.0