NA51 TRANSISTOR DATA SHEET Search Results

NA51 TRANSISTOR DATA SHEET Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
54F151/BEA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA)	PDF

NA51 TRANSISTOR DATA SHEET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
DL05L Abstract: lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates Contextual Info: Library Characteristics AMI AMERICAN MICROSYSTEMS, INC Description • Cost driven architecture: - Offers both 2 and 3 level metal interconnect to provide the lowest user cost for the number of gates and pads required. - Compiled memory blocks on standard cells are	OCR Scan	2Kx32 16Kx32 256x16 R04cwxyz, R06cwxyz 4D55c DL05L lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates	PDF
NA2X Abstract: 16 BIT ALU design with verilog/vhdl code QN-08 1329 vhdl code gold sequence code tda 2030 ic 5 pins AMI 9198 na44 MG82C54 32 BIT ALU design with verilog/vhdl code 8085 memory organization Contextual Info: 0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,+6 9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the	Original		PDF

Catalog Datasheet

Type

Document Tags

PDF

DL05L

Abstract: lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates
Contextual Info: Library Characteristics AMI AMERICAN MICROSYSTEMS, INC Description • Cost driven architecture: - Offers both 2 and 3 level metal interconnect to provide the lowest user cost for the number of gates and pads required. - Compiled memory blocks on standard cells are

OCR Scan

2Kx32 16Kx32 256x16 R04cwxyz, R06cwxyz 4D55c DL05L lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates

PDF

NA2X

Abstract: 16 BIT ALU design with verilog/vhdl code QN-08 1329 vhdl code gold sequence code tda 2030 ic 5 pins AMI 9198 na44 MG82C54 32 BIT ALU design with verilog/vhdl code 8085 memory organization
Contextual Info: 0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,+6 9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the

Original

PDF