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    NA51 DATASHEET Search Results

    NA51 DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BQ2052SN-A515
    Texas Instruments Primary Lithium Gas Gauge W/High-Speed 1-Wire (HDQ) Interface, 3 Prgmable LED Patterns 16-SOIC -20 to 70 Visit Texas Instruments Buy
    BQ2013HSN-A514TR
    Texas Instruments NiCd/NiMH/Lead-Acid Gas Gauge For High Discharge Rates (>10A), Pgmable Offset Error & Load Comp. 16-SOIC 0 to 70 Visit Texas Instruments
    BQ2013HSN-A514
    Texas Instruments NiCd/NiMH/Lead-Acid Gas Gauge For High Discharge Rates (>10A), Pgmable Offset Error & Load Comp. 16-SOIC 0 to 70 Visit Texas Instruments Buy
    BQ2013HSN-A514G4
    Texas Instruments NiCd/NiMH/Lead-Acid Gas Gauge For High Discharge Rates (>10A), Pgmable Offset Error & Load Comp. 16-SOIC 0 to 70 Visit Texas Instruments
    BQ2013HSN-A514TRG4
    Texas Instruments NiCd/NiMH/Lead-Acid Gas Gauge For High Discharge Rates (>10A), Pgmable Offset Error & Load Comp. 16-SOIC 0 to 70 Visit Texas Instruments

    NA51 DATASHEET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NA50

    Abstract: nA41 na44 NA19 NA63 AE12AE13 NA38
    Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Datasheet 1.6Gb/s 64x64 Crosspoint Switch VSC852 Features • 64 Input by 64 Output Non-blocking • Fully Differential Data Path, PECL Compatible • Full Broadcast/Multicast Capability • On-chip Input Terminations • 1.6 Gbits/sec NRZ Data Bandwidth


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    vsc85264x64g52245-0na50+6na41na44na19na63ae12ae13na38 PDF

    NA38

    Abstract: NA63 YN17 YN24 YN26 na46 YN11 na51 AE12AE13 YN40
    Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information 2.5Gb/s 64x65 Crosspoint Switch VSC836 Features • 64 Input by 65 Output Crosspoint Switch • On-chip Input Terminations • 2.5Gb/s NRZ Data Bandwidth • PECL Compatible Differential Output Driver


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    vsc836160gb/s64x65g52248-0+10na38na63yn17yn24yn26na46yn11na51ae12ae13yn40 PDF

    NA52 transistor datasheet

    Abstract: na52 Multiplexor 64 inputs na44 NA51 transistor data sheet NA51 transistor datasheet na31 NA62 NA11 NA12
    Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Data Sheet 1.6Gb/s 64x64 Crosspoint Switch VSC852 Features • 64 Input by 64 Output Non-Blocking • Fully Differential Data Path, PECL-Compatible • Full Broadcast/Multicast Capability • On-Chip Input Terminations • 1.6Gb/s NRZ Data Bandwidth


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    64x64vsc852g52245-0na52 transistor datasheet+9na52multiplexor 64 inputsna44na51 transistor data sheetna51 transistor datasheetna31na62na11na12 PDF

    m6845

    Abstract: NA51 transistor AMI 52 732 V DL651 M82530 MXI21 dl541 DF421 DF101 grid tie inverter schematics
    Contextual Info: “The new 0.6µm gate array and standard cell families from AMI provide outstanding quality and selection . . . setting performance standards in 0.6µm ASIC products . . . ” • 130 ps gate delays fanout = 2, interconnect length = 0mm ■ Double and Triple Metal Interconnect; up to 900,000 gate


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    table128m6845na51 transistorami 52 732 v+7dl651m82530mxi21dl541df421df101grid tie inverter schematics PDF

    DIGITAL GATE EMULATOR USING 8085

    Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
    Contextual Info: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S


    OCR Scan
    ami6g16sami6g33sami6g41sami6g70s+16ami6g106sami6g150sami6g202sami6g333ami6g471ami6g603digital gate emulator using 80858086 microprocessor book by a k ray180 nm cmos standard cell library amiic1732dl021m91c360ami 0.6 micron3682dami equivalent gatesic/tda7388 equivalent PDF

    DL05L

    Abstract: lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates
    Contextual Info: Library Characteristics AMI AMERICAN MICROSYSTEMS, INC Description • Cost driven architecture: - Offers both 2 and 3 level metal interconnect to provide the lowest user cost for the number of gates and pads required. - Compiled memory blocks on standard cells are


    OCR Scan
    2kx3216kx32256x16r04cwxyz+12r06cwxyz4d55cdl05llm 739dl051dodcsxe04180 nm cmos standard cell library amidl021dm91c360ami 0.6 micronmicron37ami equivalent gates PDF