1N5817 Thru 1N5819
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CREATEK Microelectronics
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Schottky Barrier Rectifier in DO-41 package with low reverse leakage, high forward surge current capability, 20V to 40V maximum repetitive peak reverse voltage, 1.0A average forward rectified current, and 0.45V to 0.60V forward voltage at 1.0A. |
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1N5819
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Microdiode Semiconductor
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Reverse Voltage 20-40V, Forward Current 1.0A, DO-41 case, Low power loss, High efficiency. |
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1N5819WS
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SUNMATE electronic Co., LTD
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Schottky barrier diode 1N5819WS in SOD-323 package features 40V peak repetitive reverse voltage, 350mA forward continuous current, low forward voltage drop, low capacitance of 50pF, and fast reverse recovery time of 10ns. |
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1N5819WS
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AK Semiconductor
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Schottky barrier diode in SOD-323 package with low forward voltage drop, negligible reverse recovery time, and reverse voltage ratings of 20V, 30V, and 40V for 1N5817WS, 1N5818WS, and 1N5819WS respectively. |
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1N5819
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JCET Group
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Schottky rectifier diode 1N581X with 1A average forward current, 20V to 40V repetitive peak reverse voltage, high surge current capability, and operating junction temperature from -55°C to +125°C. |
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1N5819W
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Shenzhen Heketai Electronics Co Ltd
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Schottky barrier diode in SOD-123 surface mount package with low forward voltage, 40V peak reverse voltage, 1A forward current, and low capacitance for high-frequency applications. |
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1N5819W
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Shandong Jingdao Microelectronics Co Ltd
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Schottky barrier rectifier with 20 V, 30 V, or 40 V maximum DC blocking voltage, 1 A average forward current, low forward voltage drop, high surge capability, and SOD-123FL surface mount package. |
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1N5819LWT
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Shenzhen Heketai Electronics Co Ltd
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Schottky barrier diode in SOD-523 package with 40V peak repetitive reverse voltage, 350mA forward current, low forward voltage drop, and 10ns reverse recovery time, suitable for surface mount applications. |
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1N5819W
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AK Semiconductor
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Schottky barrier diode in SOD-123 package with low forward voltage drop, negligible reverse recovery time, and reverse voltage ratings of 20V, 30V, and 40V for 1N5817W, 1N5818W, and 1N5819W respectively. |
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1N5819
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AK Semiconductor
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Schottky Barrier Rectifier in DO-41 package with reverse voltage ratings of 20 to 40 V, forward current of 1 A, low forward voltage drop, and high surge current capability. |
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1N5819
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SUNMATE electronic Co., LTD
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Schottky barrier rectifier diode 1N5817-1N5819 with 20-40V peak repetitive reverse voltage, 1.0A average rectified output current, low forward voltage drop, high surge capability, and operating temperature range of -65 to +125°C. |
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1N5819WS
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Shenzhen Heketai Electronics Co Ltd
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Schottky barrier diode in SOD-323 surface mount package with low forward voltage, 20V to 40V maximum DC blocking voltage, 1.0A average forward rectified current, and operating temperature range from -50 to +125°C. |
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1N5817 Thru 1N5819
