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    N5 AMPLIFIER Search Results

    N5 AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM759H/B
    Rochester Electronics LLC LM759 - Power Operational Amplifier PDF Buy
    HA2-2541-2
    Rochester Electronics LLC HA2-2541 - Operational Amplifier PDF Buy
    LM759CH
    Rochester Electronics LLC LM759 - Power Operational Amplifier, MBCY8 PDF Buy
    LM1536J/883
    Rochester Electronics LLC LM1536 - Operational Amplifier - Dual marked (7800304PA) PDF Buy
    LM108AL
    Rochester Electronics LLC LM108 - Super Gain Op Amp PDF Buy

    N5 AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bsc 68e

    Abstract: 2N5684 motorola 2N5685 MOTOROLA 2N5686 2N5684 2N5685 3015 hj N5685 J5685 PNP 2N5684
    Contextual Info: MOTOROLA O rder this docum ent by 2N5684/D SEMICONDUCTOR TECHNICAL DATA PNP 2 N 56 84 High-C urrent Com plem entary Silicon Power Transistors NPN 2 N 56 85 . . . designed for use in high-pow er amplifier and switching circuit applications. • • • 2 N5 6 8 6 *


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    2N5684/D 2N5685 2N5684 2N5686 2N5686 97A-05 O-204AE bsc 68e 2N5684 motorola 2N5685 MOTOROLA 3015 hj N5685 J5685 PNP 2N5684 PDF

    Diode LT n5

    Contextual Info: I HITACHI 2 S B 1 1 6 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER e 13X X I Raw 2. "»iiçtwir (Fiaogci .V Knww Í[jiríten\í<>n5; <r. null (JEDEC TO-2ZOAB) I ABSOLUTE MAXIMUM RATINGS ,Ta=25*C) Item 2SB1 106 Symbol Unit Collector to to«: voltage


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    2SB11Ü Diode LT n5 PDF

    WTVA0300N07SMTF

    Abstract: WTVA0300N07 TVA0500N07 fx090 TVA0600N 3N7 diode tva0600 WTVA TVA0600N07 WTVA0300N07S
    Contextual Info: 4.21.2010 DATA SHEET WTVAXX00N0XSMTF FEATURES • • • • • • • • • • • APPLICATIONS Wide Band DC – 20GHz True Surface Mount Package Small Footprint 0.075 X 0.060 Replaces AGC loops with a single device Available in 3, 4, 5,and 6 dB in N3, N5, and N7 shift


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    WTVAXX00N0XSMTF 20GHz WTVAXX00N0XSMTF WTVA0300N07SMTF WTVA0300N07 TVA0500N07 fx090 TVA0600N 3N7 diode tva0600 WTVA TVA0600N07 WTVA0300N07S PDF

    Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM 3S 9B N5 - 9 9 7 0 C opyri ght 200 7-2011 Texas Instruments Incorporated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments


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    Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 1 3 4 4 2 . 2 5 4 9 S P M S 213B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated


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    Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 1 3 4 4 2 . 2 5 4 9 S P M S 213B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated


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    Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 11 4 2 5 C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments


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    IC1340

    Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 11 4 2 5 C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments


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    Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 1 5 8 5 2 . 2 7 4 3 S P M S 213C C o p yri g h t 2 0 07-2014 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2014 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments


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    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC1654 TRANSISTOR NPN SOT–23 FEATURES  High Frequency Power Amplifier Application  Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    OT-23 2SC1654 PDF

    Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23


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    2SC1654 OT-23 BL/SSSTC096 PDF

    PM2-LH10

    Abstract: photoelectric sensor circuit diagram light dark sensor circuit pm2-lf10 PM2-LH10-L N4 Amplifier CN-13-C1 sensor 13 L shock sensor amplifier zener diode code color
    Contextual Info: PHOTOELECTRIC SENSORS PM2 SERIES MS-AJ Sensor Mounting Stand Convergent Reflective Micro Photoelectric Sensor PM2 Micro PM Convergent Reflection Sensing Ensures Stable Detection CHX-SC2 SU-7/SH SS-A5 Sensor Checker Amplifier-separated Type VF NX5 Multi-voltage Type


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    PM2-LL10-C1 PM2-LL10B-C1 PM2-LH10 photoelectric sensor circuit diagram light dark sensor circuit pm2-lf10 PM2-LH10-L N4 Amplifier CN-13-C1 sensor 13 L shock sensor amplifier zener diode code color PDF

    marking N5 mmic

    Abstract: mmic n5 marking n5 amplifier RF TRANSISTOR 586 EDS-101105 NGA-586 RF amplifier GHz driver n5 359 rf amplifier marking n5 SIRENZA MARKING
    Contextual Info: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with


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    NGA-586 NGA-586 EDS-101105 marking N5 mmic mmic n5 marking n5 amplifier RF TRANSISTOR 586 RF amplifier GHz driver n5 359 rf amplifier marking n5 SIRENZA MARKING PDF

    NGA-589

    Abstract: marking n5 amplifier 6.0 GHZ marking n5 amplifier
    Contextual Info: Product Description Stanford Microdevices’ NGA-589 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases


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    NGA-589 NGA-589 EDS-100376 marking n5 amplifier 6.0 GHZ marking n5 amplifier PDF

    marking N5 mmic

    Abstract: marking n5 amplifier NGA-589 marking n5 amplifier 6.0 GHZ mmic n5
    Contextual Info: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance


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    NGA-589 NGA-589 NGA589 EDS-100376 marking N5 mmic marking n5 amplifier marking n5 amplifier 6.0 GHZ mmic n5 PDF

    SIRENZA MARKING

    Contextual Info: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with


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    NGA-586 NGA-586 EDS-101105 SIRENZA MARKING PDF

    Contextual Info: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with


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    NGA-586 NGA-586 EDS-101105 PDF

    NGA-586

    Abstract: EDS-101105 marking n5 amplifier marking n5 DBM
    Contextual Info: Product Description Stanford Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases


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    NGA-586 NGA-586 EDS-101105 marking n5 amplifier marking n5 DBM PDF

    LE-12T

    Abstract: marking N5 mmic marking n5 amplifier
    Contextual Info: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier • High Gain : 19.2 dB at 1950 MHz • Operates From Single Supply • Low Thermal Resistance Package T -20 Applications LE T ORL -30 6 • PA Driver Amplifier • Cellular, PCS, GSM, UMTS


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    NGA-589 NGA589 EDS-100376 LE-12T marking N5 mmic marking n5 amplifier PDF

    2N5518

    Abstract: 2N551 2N5521 2N5515 2N5516 2N5517 2N5519 2N5520 2N5515-2N5524 200fia
    Contextual Info: □1 G E SOLI» STATE DE I 3Û7SGÛ1 D011D04 T " — 2* f — iL y «• N IO K> z « I m 2N5515-2N5524 Dual N-Channel JF E T Low Noise Amplifier ABSOLUTE MAXIMUM RATINGS n FEATURES IO • Tight Temperature Tracking M • Tight Matching Ta = 25°C unless otherwise specified


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    2N5515-2N5524 D011D04 6037-2N5515-19 6019-2N5520-24 10sec) 250mW 375mW 200HA 2N5518 2N551 2N5521 2N5515 2N5516 2N5517 2N5519 2N5520 2N5515-2N5524 200fia PDF

    N7 thermistor

    Abstract: 20/shicoh n7
    Contextual Info: DATA BOOK Thin Film Components Variable Chip Attenuators SUSUMU CO.,LTD. Variable Chip Attenuators Structure Structure :Combine a NTC at the center of a thin film chip attenuator in parallel. Protection film Thermistor Resistor Resistance film Electrode grounded terminal


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    PBX1632S PXV1220S PBV1632S PBV1632S-4dB-N4 20pcs) PBV1632S-6dB-N4 N7 thermistor 20/shicoh n7 PDF

    EDS-101105

    Abstract: NGA-586 transistor c 6093
    Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ NGA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for


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    NGA-586 DC-6000 19ess EDS-101105 transistor c 6093 PDF

    Contextual Info: Audio ICs Bus interface for car audio BA8272F The BA8272F is a bus interface 1C slave side developed for car audio applications. When used with the BA8272F (mas­ ter side), it is possible to construct a communication system for the deck and components such as power amplifiers, CD


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    BA8272F BA8272F BA8270F 200pF PDF

    LA7796T

    Abstract: 617DB-1010
    Contextual Info: Ordering number : ENA1145A Monolithic Linear IC LA7796T For Digital CATV/Cable Modem Receiver AGC Amplifier Overview LA7796T is an AGC amplifier. It is ideally suited for use with Digital CATV, Cable modem receiver and IP Telephony receiver. Functions • IF AGC control


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    ENA1145A LA7796T LA7796T A1145-8/8 617DB-1010 PDF