N4007 DC Search Results

n4007

Abstract: N4007G 1N4007 marking CD N4001 1N4001 1N4002 1N4003 1N4004 1N4005 A-405
Contextual Info: 3SKÊ 1N4001 G/L - 1 N4007/GL /LITEM ÏI7 1.0A GLASS PASSIVATED RECTIFIER — / POWERSEMICONDUCTOR I Features • • • • • Glass Passivated Die Construction Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak

1N40C

Abstract: n4007 ln4001 N4001 1N4007L 1N4007 n4005 1N4001 A-405 1N4004L
Contextual Info: 3SKÊ 1N4001 / L - 1 N4007/L /LI T E M I 17 - / POWERSEMICONDUCTOR I 1.0A RECTIFIER Features • • • • • Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Reverse Leakage Current

n4007

Abstract: A-405 rectifier N4007 DC
Contextual Info: 1N4001G/L - 1 N4007/GL VISHAY 1.0A GLASS PASSIVATED RECTIFIER / u T E M ir I POWERSEMICONDUCTOR J Features Glass Passivated Die Construction Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Plastic Material - UL Flammability

1N4O07

Contextual Info: 1N4001 THRU FORWARD INTRRNATEONAL ELECTRONICS LTD, SEMICONDUCTOR TECHNICAL DATA 1 N4007 TECHNICAL SPECIFICATIONS O F S ILIC O N R E C TIFIE R VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere - - FEATURES T Low cost * Low leakage * Low forward voltage drop

Contextual Info: :m ic q n d u c to r T m 1N4001 -1 N4007 Features 1.0 min 25.4 • Low forw ard voltage drop. Dimensions in inches (mm) • High surge current capability. 0.205 (5.21) 0.160 (4.06) DO-41 COLOR BAND DENOTES CATHODE 0.107 (2.72) 0.080 (2.03) -H 0.034 (0.86)

n4007

Abstract: DS28002 n4001
Contextual Info: 1N4001/L - 1 N4007/L 1.0A RECTIFIER Features Diffused Junction High C urrent C apability and Low Forward Voltage Drop Surge O verload Rating to 30A Peak Low R everse Leakage C urrent Plastic M aterial - UL Flam m ability C lassification 94V-0 I D Mechanical Data

N4007

Abstract: AY 5 4007 fairchild semiconductor 1N4001-1N4007 1N4001-1N4007
Contextual Info: Discrete POWER & Signal Technologies S E M IC O N D U C T O R , 1N4001 -1 N4007 Features • Low forward voltage drop. 1.0 min 25.4 Dimensions in inuhes (mm) • High surge current capability. 0.205 (5.21) 0.160 (4.06) COLOR SAND DENOTES CATHODE -H 0.107 (2.72)

1N4001

Abstract: 1N4007
Contextual Info: ÏM IC Q N D U C T D R tm 1N4001 - 1 N4007 Features 1.0 min • Low forw ard voltage drop. 25.4 Dimensions in inches (mm) • High surge current capability. 0.205 (5.21) 0.160 (4.06) DO-41 COLOR BAND DENOTES CATHODE 0.107 (2.72) 0.080 (2.03) -H 0.034 (0.86)

Contextual Info: 1N4001/L - 1 N4007/L 1.0A RECTIFIER Features Diffused Junction High C urrent C apability and Low Forward V oltag e Drop S urge O verload Rating to 3 0 A P e a k I Low R everse L eakag e Current Plastic Material: U L Flam m ability Classification Rating 9 4 V -0

n4007

Abstract: N4007 DC 1N40011 1N4001-1N4007 1n4001-1n4
Contextual Info: :m ic q n d u c to r T m 1N4001 -1 N4007 Features 1.0 m in • Low forw a rd voltage drop. 25.4 Dimensions in inches (mm) • High surge current capability. 0.205 (5.21) 0.160 (4.06) C O LO R BAND D EN O TES C ATHO DE 0.107 (2.72) 0.080 (2.03) -H 0.034 (0.86)

N4001 diode

Abstract: DIODE n4007 n4007 diode diode n4001 n4004 diode n4005 N4007 N4002 diode N4003 diode 1N4001 specifications
Contextual Info: 1N4001/L-1N4007/L Vishay Lite-On Power Semiconductor ▼ 1.OARectifier Features • Diffused junction • High current capability and low forw ard voltage drop • Surge overload rating to 3 0A peak • Low reverse leakage current • Plastic m aterial - UL R ecognition flam m ability

n4007 diode

Abstract: DIODE n4007 Diode rectifier N4007 n4007 1N4001 SMT 1210 capacitors nacew 10megohms
Contextual Info: Table of Contents and Selection Chart ALUMINUM AND TANTALUM ELECTROLYTIC CAPACITORS LEADED TYPES AXIAL SUB-MINIATURE TYPES RADIAL LOW IMPEDANCE HIGH RELIABILITY TYPES RADIAL LOW LEAKAGE TYPES RADIAL SUPER-MINIATURE RADIAL STANDARD TYPES Type Series ApplicatiorVFeature

Contextual Info: MOTOROLA O rder this docum ent by BUL45/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L 45* BUL45F* NPN Silicon Power Transistor ‘ Motorola Preferred Device High Voltage SWITCHMODE™ Series POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

ST CHN 749

Abstract: 5mo 365 r S1526 Transistor GK 46 JE172 TRANSISTOR chn 602 transistor gk 2f
Contextual Info: [Z ^ 7 J # . S G S -T H O M S O N L3234 K f lQ L 3 2 3 5 M t E M E » « © HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS • H IG H L Y IN TEG R A TE D SU B S C R IB E R LINE IN TER FAC E KIT FOR PA BX AN D KE Y S Y S ­ T E M A P P LIC A TIO N S

axial zener diodes marking code c3v6

Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.

101ra100

Abstract: 22RC10 71RA120 36RA80 101RC60 PR002W 40RCS60 151ra100 250pa120 250RA80
Contextual Info: EUROPEAN CATALOGUE CATALOGO EUROPEO EUROPAISCHER KATALOG CATALOGUE EUROPEEN In tro d u c tio n The products specified in this shortform catalogue have been selected from the comprehensive range manufactured by the International Rectifier group of Companies.

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest