1N4007F
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Shikues Semiconductor
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Surface Mount, 50-1000V, 1A, Low Profile, Glass Passivated, Lead Free, SMAF Case, 27mg. |
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1N4007W
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AK Semiconductor
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Surface mount general purpose silicon rectifier in SOD-123FL package, rated for 1A average forward current and reverse voltages from 50V to 1000V, with 30A peak surge current capability. |
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1N4007L
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Shenzhen Heketai Electronics Co Ltd
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Surface mount general purpose rectifier diode with 1 A average forward current, 30 A peak surge current, low forward voltage drop, glass passivated junction, and reverse voltage ratings from 50 to 1000 V in SOD-123FL package. |
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1N4007
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SUNMATE electronic Co., LTD
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1N4001 - 1N4007 axial leaded rectifier diodes feature 50 to 1000V reverse voltage range, 1.0A average rectified current, low forward voltage drop of 1.0V at 1.0A, high surge current capability, and operating temperature from -65 to +125°C. |
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1N4007WS
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AK Semiconductor
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Surface mount glass passivated standard rectifier diode in SOD-323 package, with reverse voltage ratings from 50V to 1000V, 1.0A forward current, low forward voltage drop, and negligible reverse recovery time. |
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1N4007G
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Microdiode Semiconductor
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Rectifier, reverse voltage 50-1000V, forward current 1.0A, flammability 94V-0, low leakage, high surge current, soldering 250°C/10s, DO-41. |
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1N4007G
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Shikues Semiconductor
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Reverse Voltage 50-1000V, Forward Current 1A, Cathode, Anode, 25°C ambient. |
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1N4007WS
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Shenzhen Heketai Electronics Co Ltd
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Surface mount rectifier diode in SOD-323 package with 1 A average forward current, 25 A non-repetitive surge current, glass-passivated junction, and reverse voltage ratings from 50 to 1000 V for 1N4001WS through 1N4007WS. |
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1N4007
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AK Semiconductor
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1N4002 through 1N4007 DO-41 standard silicon rectifiers feature reverse voltages from 100 to 1000 V, forward current rating of 1 A, low profile package for surface mount applications, lead-free and compliant with RoHS directives. |
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1N4007G
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AK Semiconductor
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1N4002G through 1N4007G are DO-41 surface mount silicon rectifiers with reverse voltage ratings from 100 to 1000 V, 1 A average forward current, 30 A peak surge current, and glass passivated junctions suitable for high reliability applications. |
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1N4007WS
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SLKOR
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Fast switching, high conductance, SMD, 300mA, 400mA, 500mW, 150ć, -55 to 150ć, 100V, 4ns. |
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1N4007
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JCET Group
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1N4001 through 1N4007 general purpose rectifier diodes in DO-41 package, rated for 50V to 1000V repetitive peak reverse voltage, 1A average forward current, with high surge current capability and operating junction temperature from -55C to +150C. |
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1N4007W
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Shandong Jingdao Microelectronics Co Ltd
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Surface mount general purpose silicon rectifier in SOD-123FL package, with reverse voltage ratings from 50 to 1000 V, forward current up to 1 A, and surge current capability of 30 A. |
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1N4007
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Shikues Semiconductor
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Original |
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1N4007W
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Shenzhen Heketai Electronics Co Ltd
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Surface mount general purpose rectifier diode in SOD-123 package with peak reverse voltage from 50V to 1000V, 1A average forward current, 30A non-repetitive surge current, low forward voltage drop, and glass passivated junction. |
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1N4007
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Microdiode Semiconductor
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Reverse voltage 50-1000V, forward current 1.0A, flammability 94V-0, low leakage, high surge, 250°C/10s soldering, 0.23g. |
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1N4007F
