N38 E Search Results
N38 E Price and Stock
NXP Semiconductors PMN38EN,135MOSFET N-CH 30V 5.4A 6TSOP |
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PMN38EN,135 | Reel | 10,000 |
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PMN38EN,135 | 60,300 | 1 |
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Rochester Electronics LLC PMN38EN,135MOSFET N-CH 30V 5.4A 6TSOP |
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PMN38EN,135 | Bulk | 1,820 |
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Torex Semiconductor LTD XC6127N38E7R-GIC SUPERVISOR 1 CHANNEL 4USPN |
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XC6127N38E7R-G | Reel | 5,000 |
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XC6127N38E7R-G | Reel | 12 Weeks | 5,000 |
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Torex Semiconductor LTD XC6127N38ENR-GIC SUPERVISOR 1 CHANNEL SSOT24 |
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XC6127N38ENR-G | Reel | 3,000 |
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XC6127N38ENR-G | Reel | 12 Weeks | 3,000 |
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Torex Semiconductor LTD XC6129N38ENR-GIC SUPERVISOR 1 CHANNEL SSOT24 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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XC6129N38ENR-G | Reel | 3,000 |
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XC6129N38ENR-G | Reel | 12 Weeks | 3,000 |
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N38 E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SL 100 NPN Transistor
Abstract: n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector BFG590 RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor
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BFG590; BFG590/X; BFG590/XR OT143 OT143R BFG590 BFG590/X BFG590/XR BFG590 711DflSb SL 100 NPN Transistor n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor | |
DSAIH0002540Contextual Info: K Ü3E C INTERNATIONAL D I 117^03 □□□□□54 7 - ^ & 0 } ^ O 7 Type N 0 . I N38 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 |
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MIL-S-19500, DSAIH0002540 | |
n38 transistorContextual Info: Philips Semiconductors bbS3^3i m m 0 0 3 NPN 8 GHz wideband transistor — Preliminary specification 4S0 • APX BFG590; BFG590/X; BFG590/XR AUER PHILIPS/DISCRETE N fc^E ]>■ PINNING FEATURES DESCRIPTION PIN • High power gain • Low noise figure BFG590 Fig.1 Code: N38 |
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BFG590; BFG590/X; BFG590/XR BFG590 BFG590/X BFG590 bb53T31 QQ314b5 n38 transistor | |
n38 transistor
Abstract: gg3m BFG590 philips MATV amplifiers
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BFG590; BFG590/X; BFG590/XR BFG590 OT143 BFG590 0Q314bS n38 transistor gg3m philips MATV amplifiers | |
Contextual Info: 43952 TERMINAL MATERIAL NO. ASSEM BLY VERSION "C" DIMENSION 43952-010 I 43952-0201 STANDARD VERSION MAKE-RIRST / BREAK-LAST 3 .5 0 / . 138 L50/L059) FINISH A FINISH A 43952-0301 STANDARD VERSION 3.5 0/ G 138) FINISH A FINISH CODE •P1 DIMENSION 3.50/(N38) |
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L50/L059) SD-43952-0 | |
Contextual Info: YH1310 Series OCXO 10 MHz – 30 MHz GREENRAY INDUSTRIES, INC. Rev A P R E C I S IO N Q U A R T Z T E C H N O L O G Y Low Phase Noise HCMOS or Sinewave Output Ideal for Base Station or Test Equipment Apps SPECIFICATIONS Frequency Output Harmonics Symmetry |
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YH1310 YH1311 -20dBc 1x10-7 2x10-7 5x10-8 10MHz | |
Allen-Bradley W heater elements
Abstract: Allen-Bradley heater elements Allen-Bradley bulletin 815 type a Allen-Bradley bulletin 705 Allen-Bradley bulletin 712 4-02-4024 Allen-Bradley 500 heater elements Allen-Bradley bulletin 815 Allen-Bradley starter 709 N7812
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n38 transistor
Abstract: marking b28 YH1310 YH13
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YH1310 n38 transistor marking b28 YH13 | |
Contextual Info: YH1310 Series OCXO 10.0 MHz – 30.0 MHz GREENRAY INDUSTRIES, INC. PRECISION QUARTZ TECHNOLOGY Euro Package CO-8 OCXO SC-cut Crystal Sine Wave Output Superior Stability SPECIFICATIONS Frequency Output Input Voltage Input Power; Warm-up@25¡C Steady State @25¡C |
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YH1310 | |
icp-n20
Abstract: n38 transistor ICP-N38 ICP-N70 ICP-N25 ICP-N50 T104
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E107856) icp-n20 n38 transistor ICP-N38 ICP-N70 ICP-N25 ICP-N50 T104 | |
ICP-N20Contextual Info: IC protector Overcurrent Protection Elements Circuit protection elements zCircuit protection elements Rohm’s circuit protectors have a very reliable current cut-off capability that protects ICs and their circuits from accidental short circuit loads. Whether operated in AC or DC circuits, these circuit protectors have a very low internal resistance in |
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E107856) ICP-N20 | |
ICP-N25
Abstract: ICP-N38 T104 ic protector
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E107856) ICP-N25 ICP-N38 T104 ic protector | |
n37 transistor
Abstract: EL2075 EL4083 n38 transistor n34 transistor VFI15 VFI13 EL2082 EL4083CN EL4083CS
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EL4083 FN7157 EL4083 n37 transistor EL2075 n38 transistor n34 transistor VFI15 VFI13 EL2082 EL4083CN EL4083CS | |
ICP-N10
Abstract: ICP-N20 n20 ic protector ICP-N38 ICP-N15 ICP-N25 N10 ICP N38 transistor N15 ICP ICP-N50
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E107856) ICP-N10 ICP-N20 n20 ic protector ICP-N38 ICP-N15 ICP-N25 N10 ICP N38 transistor N15 ICP ICP-N50 | |
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Contextual Info: revision for dwg # 1PB-BTx rev ch.no. - - date description original design 11/21/2007 revised by Philipp E. Cat. No. BT1 BT2 BT3 BT4 BT6 BT8 Color White Black Green Red Blue Yellow unless otherwise specified: all dimensions are in millimeters third angle projection |
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Contextual Info: m o l e x 1.27mm Pitch PCMCIA I/O Receptacle FEATURES AND SPECIFICATIONS featu res and Benefits Electrical • High temperature housing fo r SMT I.R. reflow Voltage: 100V Current: 0.5A Contact Resistance: 40m£2 max. Dielectric Withstanding Voltage: 500V AC |
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A7325 | |
transistor N43
Abstract: 4083C
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EL4083C ixin17 VFI10 VFI12 VFI13 VFI14 VFI15 VFI16 VFI17 transistor N43 4083C | |
CST-532AContextual Info: Package Outline g X Q <02 » | Polarity Device Super-bright Red (R / Orange IE)/ Yellow (Y(/Super/ Red (D) Bright Red (H) Amber (A) Bright Yellow (T) Bright Green (F) Package Xp = 660 nm \p = 655/695 nm Xp = 635/610 nm Xp= 590/585 nm Xp = 570/570 nm Drawing |
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CSD-5622R-21 CSD-5622E CSD-5622Y 5622G CSD-5622D-21 5622H-21 CSD-5623D CSD-5623H-21 CSD-5623A-1 5623R-21 CST-532A | |
100 n37
Abstract: n37 or gate ATL35 CMOS GATE ARRAY
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ATL35 ATL55Cells 25degC 100 n37 n37 or gate CMOS GATE ARRAY | |
SOT23 W1P
Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
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BF547 BF547W BF747 BFC505 OT323 OT353 OT143 SOT23 W1P MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323 | |
Contextual Info: DMN3018SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 21mΩ @ VGS = 10V 8.5A V(BR)DSS 30V Features and Benefits Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher |
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DMN3018SFG DS35638 | |
n37 transistor
Abstract: n38 transistor P41 transistor P42 transistor ATL60 n38P
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ATL60 at60Cells 25degC n37 transistor n38 transistor P41 transistor P42 transistor n38P | |
CMOS GATE ARRAY
Abstract: ATL60
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ATL60 at60IO step80 at60IO 25degC CMOS GATE ARRAY | |
ICP-N25
Abstract: ICP-F25 ICP-N15 ICP-F15 ICP-F10
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E107856) ICP-F10 ICP-F15 P-F20 ICP-F25 ICP-F50 ICP-F70 ICP-N10 ICP-N15 ICP-N20 ICP-N25 |