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    N38 E Search Results

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    NXP Semiconductors PMN38EN,135

    MOSFET N-CH 30V 5.4A 6TSOP
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    DigiKey PMN38EN,135 Reel 10,000
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    Rochester Electronics PMN38EN,135 60,300 1
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    • 1000 $0.13
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    Rochester Electronics LLC PMN38EN,135

    MOSFET N-CH 30V 5.4A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PMN38EN,135 Bulk 1,820
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    Torex Semiconductor LTD XC6127N38E7R-G

    IC SUPERVISOR 1 CHANNEL 4USPN
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    DigiKey XC6127N38E7R-G Reel 5,000
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    Avnet Americas XC6127N38E7R-G Reel 12 Weeks 5,000
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    Torex Semiconductor LTD XC6127N38ENR-G

    IC SUPERVISOR 1 CHANNEL SSOT24
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    DigiKey XC6127N38ENR-G Reel 3,000
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    Avnet Americas XC6127N38ENR-G Reel 12 Weeks 3,000
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    Torex Semiconductor LTD XC6129N38ENR-G

    IC SUPERVISOR 1 CHANNEL SSOT24
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    DigiKey XC6129N38ENR-G Reel 3,000
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    Avnet Americas XC6129N38ENR-G Reel 12 Weeks 3,000
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    N38 E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SL 100 NPN Transistor

    Abstract: n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector BFG590 RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor
    Contextual Info: Philips Semiconductors Product specification BFG590; BFG590/X; BFG590/XR NPN 5 GHz wideband transistor FEATURES MARKING • High power gain TYPE NUMBER • Low noise figure BFG590 N38 • High transition frequency BFG590/X N44 • Gold metallization ensures


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    BFG590; BFG590/X; BFG590/XR OT143 OT143R BFG590 BFG590/X BFG590/XR BFG590 711DflSb SL 100 NPN Transistor n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor PDF

    DSAIH0002540

    Contextual Info: K Ü3E C INTERNATIONAL D I 117^03 □□□□□54 7 - ^ & 0 } ^ O 7 Type N 0 . I N38 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377


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    MIL-S-19500, DSAIH0002540 PDF

    n38 transistor

    Contextual Info: Philips Semiconductors bbS3^3i m m 0 0 3 NPN 8 GHz wideband transistor — Preliminary specification 4S0 • APX BFG590; BFG590/X; BFG590/XR AUER PHILIPS/DISCRETE N fc^E ]>■ PINNING FEATURES DESCRIPTION PIN • High power gain • Low noise figure BFG590 Fig.1 Code: N38


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    BFG590; BFG590/X; BFG590/XR BFG590 BFG590/X BFG590 bb53T31 QQ314b5 n38 transistor PDF

    n38 transistor

    Abstract: gg3m BFG590 philips MATV amplifiers
    Contextual Info: PhjjjP^ jJjjÇonductors _ bfc.53^31 OÜ314b4 45D HIAPX NPN 8 GHz wideband transistor ^ BFG590; BFG590/X; BFG590/XR N APIER PHILIPS/DISCRETE blE »• PINNING FEATURES DESCRIPTION PIN • High power gain BFG590 Fig.1 Code: N38 • Low noise figure • High transition frequency


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    BFG590; BFG590/X; BFG590/XR BFG590 OT143 BFG590 0Q314bS n38 transistor gg3m philips MATV amplifiers PDF

    Contextual Info: 43952 TERMINAL MATERIAL NO. ASSEM BLY VERSION "C" DIMENSION 43952-010 I 43952-0201 STANDARD VERSION MAKE-RIRST / BREAK-LAST 3 .5 0 / . 138 L50/L059) FINISH A FINISH A 43952-0301 STANDARD VERSION 3.5 0/ G 138) FINISH A FINISH CODE •P1 DIMENSION 3.50/(N38)


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    L50/L059) SD-43952-0 PDF

    Contextual Info: YH1310 Series OCXO 10 MHz – 30 MHz GREENRAY INDUSTRIES, INC. Rev A P R E C I S IO N Q U A R T Z T E C H N O L O G Y Low Phase Noise HCMOS or Sinewave Output Ideal for Base Station or Test Equipment Apps SPECIFICATIONS Frequency Output Harmonics Symmetry


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    YH1310 YH1311 -20dBc 1x10-7 2x10-7 5x10-8 10MHz PDF

    Allen-Bradley W heater elements

    Abstract: Allen-Bradley heater elements Allen-Bradley bulletin 815 type a Allen-Bradley bulletin 705 Allen-Bradley bulletin 712 4-02-4024 Allen-Bradley 500 heater elements Allen-Bradley bulletin 815 Allen-Bradley starter 709 N7812
    Contextual Info: BULLETIN c m T&w PRODUCT I 815 DATA TYPEN HEATERELEMENTS HEATER ELEMENT SELECTION - The “Full Load Amps.” listed in the tables are to be used for heater element selection. The rating of the relay in amperes at 40” C is 115% of the “Full Load Amps.” listed for the “Heater Type No.”


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    n38 transistor

    Abstract: marking b28 YH1310 YH13
    Contextual Info: YH1310 Series OCXO 10.0 MHz – 30.0 MHz GREENRAY INDUSTRIES, INC. PRECISION QUARTZ TECHNOLOGY Euro Package CO-8 OCXO SC-cut Crystal Sine Wave Output Superior Stability SPECIFICATIONS Frequency Output Input Voltage Input Power; Warm-up@25°C Steady State @25°C


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    YH1310 n38 transistor marking b28 YH13 PDF

    Contextual Info: YH1310 Series OCXO 10.0 MHz – 30.0 MHz GREENRAY INDUSTRIES, INC. PRECISION QUARTZ TECHNOLOGY Euro Package CO-8 OCXO SC-cut Crystal Sine Wave Output Superior Stability SPECIFICATIONS Frequency Output Input Voltage Input Power; Warm-up@25¡C Steady State @25¡C


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    YH1310 PDF

    icp-n20

    Abstract: n38 transistor ICP-N38 ICP-N70 ICP-N25 ICP-N50 T104
    Contextual Info: IC protector Overcurrent Protection Elements Circuit protection elements zCircuit protection elements Rohm’s circuit protectors have a very reliable current cut-off capability that protects ICs and their circuits from accidental short circuit loads. Whether operated in AC or DC circuits, these circuit protectors have a very low internal resistance in


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    E107856) icp-n20 n38 transistor ICP-N38 ICP-N70 ICP-N25 ICP-N50 T104 PDF

    ICP-N20

    Contextual Info: IC protector Overcurrent Protection Elements Circuit protection elements zCircuit protection elements Rohm’s circuit protectors have a very reliable current cut-off capability that protects ICs and their circuits from accidental short circuit loads. Whether operated in AC or DC circuits, these circuit protectors have a very low internal resistance in


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    E107856) ICP-N20 PDF

    ICP-N25

    Abstract: ICP-N38 T104 ic protector
    Contextual Info: IC protector Overcurrent Protection Elements Circuit protection elements zCircuit protection elements Rohm’s circuit protectors have a very reliable current cut-off capability that protects ICs and their circuits from accidental short circuit loads. Whether operated in AC or DC circuits, these circuit protectors have a very low internal resistance in


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    E107856) ICP-N25 ICP-N38 T104 ic protector PDF

    n37 transistor

    Abstract: EL2075 EL4083 n38 transistor n34 transistor VFI15 VFI13 EL2082 EL4083CN EL4083CS
    Contextual Info: EL4083 CT ODU ENT E PR PLACEM r at T E L E O R S e B D C nte /tsc O NDE port MME ical Sup ersil.com O C E n t h w.in NO R oData r Tec oSheet r ww ct u conta -INTERSIL 1-888 December 1995, Rev. B FN7157 Current Mode Four Quadrant Multiplier Features The EL4083 makes use of an Elantec


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    EL4083 FN7157 EL4083 n37 transistor EL2075 n38 transistor n34 transistor VFI15 VFI13 EL2082 EL4083CN EL4083CS PDF

    ICP-N10

    Abstract: ICP-N20 n20 ic protector ICP-N38 ICP-N15 ICP-N25 N10 ICP N38 transistor N15 ICP ICP-N50
    Contextual Info: IC protector Overcurrent Protection Elements Circuit protection elements zCircuit protection elements Rohm’s circuit protectors have a very reliable current cut-off capability that protects ICs and their circuits from accidental short circuit loads. Whether operated in AC or DC circuits, these circuit protectors have a very low internal resistance in


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    E107856) ICP-N10 ICP-N20 n20 ic protector ICP-N38 ICP-N15 ICP-N25 N10 ICP N38 transistor N15 ICP ICP-N50 PDF

    Contextual Info: revision for dwg # 1PB-BTx rev ch.no. - - date description original design 11/21/2007 revised by Philipp E. Cat. No. BT1 BT2 BT3 BT4 BT6 BT8 Color White Black Green Red Blue Yellow unless otherwise specified: all dimensions are in millimeters third angle projection


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    Contextual Info: m o l e x 1.27mm Pitch PCMCIA I/O Receptacle FEATURES AND SPECIFICATIONS featu res and Benefits Electrical • High temperature housing fo r SMT I.R. reflow Voltage: 100V Current: 0.5A Contact Resistance: 40m£2 max. Dielectric Withstanding Voltage: 500V AC


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    A7325 PDF

    transistor N43

    Abstract: 4083C
    Contextual Info: HIGH PERFORMANCE ANALOG iNTEOTATÊDCMCUfTS F eatu res Current Mode Four Quadrant Multiplier G eneral D escrip tion T he 4083C m akes use of an E lantec fully com plim entary oxide isolated bipolar process to produce a p a te n t pending cu rren t in, cu rren t out four q uadrant m ultiplier. In p u t and o u tp u t signal


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    EL4083C ixin17 VFI10 VFI12 VFI13 VFI14 VFI15 VFI16 VFI17 transistor N43 4083C PDF

    CST-532A

    Contextual Info: Package Outline g X Q <02 » | Polarity Device Super-bright Red (R / Orange IE)/ Yellow (Y(/Super/ Red (D) Bright Red (H) Amber (A) Bright Yellow (T) Bright Green (F) Package Xp = 660 nm \p = 655/695 nm Xp = 635/610 nm Xp= 590/585 nm Xp = 570/570 nm Drawing


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    CSD-5622R-21 CSD-5622E CSD-5622Y 5622G CSD-5622D-21 5622H-21 CSD-5623D CSD-5623H-21 CSD-5623A-1 5623R-21 CST-532A PDF

    100 n37

    Abstract: n37 or gate ATL35 CMOS GATE ARRAY
    Contextual Info: BUF2T ATL35 CMOS Gate Array cell data sheets 1.0 DESCRIPTION: 2x tristate bus driver with active high enable Truth Table: E I | O -0 X | Z 1 0 | 0 1 1 | 1 ATL55Cells BUF2T O I E VDD! p P11 VDD! p P4 n N3 p P12 VSS! I O n N5 VDD! N13 VSS! n p VDD! P0


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    ATL35 ATL55Cells 25degC 100 n37 n37 or gate CMOS GATE ARRAY PDF

    SOT23 W1P

    Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
    Contextual Info: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23


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    BF547 BF547W BF747 BFC505 OT323 OT353 OT143 SOT23 W1P MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323 PDF

    Contextual Info: DMN3018SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 21mΩ @ VGS = 10V 8.5A V(BR)DSS 30V Features and Benefits Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher


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    DMN3018SFG DS35638 PDF

    n37 transistor

    Abstract: n38 transistor P41 transistor P42 transistor ATL60 n38P
    Contextual Info: BUF2T ATL60 CMOS Gate Array cell data sheets 3.3 DESCRIPTION: 2x Tri State bus driver with active high enable Truth Table: E I | O -0 X | Z 1 0 | 0 1 1 | 1 at60Cells BUF2T O I E VDD! p P11 VDD! p P4 n N3 p P12 VSS! I O n N5 VDD! N13 VSS! n p VDD! P0


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    ATL60 at60Cells 25degC n37 transistor n38 transistor P41 transistor P42 transistor n38P PDF

    CMOS GATE ARRAY

    Abstract: ATL60
    Contextual Info: PIC ATL60 CMOS Gate Array cell data sheets 3.3 DESCRIPTION: input buffer Truth Table: P | AI0 -0 | 1 | 1 at60IO_step80 PIC P AI0 P I at60IO ESD_PROTECT U384 AI0 U379 O I IOBUF8_VERSION2 8X at60IO / $Revision: 1.27 $


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    ATL60 at60IO step80 at60IO 25degC CMOS GATE ARRAY PDF

    ICP-N25

    Abstract: ICP-F25 ICP-N15 ICP-F15 ICP-F10
    Contextual Info: noHm Circuit Protection Elements •RO HM ’s Circuit Protection Elements ROHM overcurrent protection elements are in lightweight, small package, offering low internal impedance against rated current, but high resistance against cut off current. They positively protect semiconductors such as ICs, LSIs,


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    E107856) ICP-F10 ICP-F15 P-F20 ICP-F25 ICP-F50 ICP-F70 ICP-N10 ICP-N15 ICP-N20 ICP-N25 PDF