N20 N21 FET Search Results

n20 n21 fet

Abstract: 53E1 FDG6318PZ SC-70-6 SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4
Contextual Info: FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital

76129S

Abstract: 76129P HUF76129P3 HUF76129S3S HUF76129S3ST TB334
Contextual Info: HUF76129P3, HUF76129S3S Semiconductor Data Sheet 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. 6129P3 This advanced process technology

76145S

Abstract: 76145P HUF76145P3 HUF76145S3S HUF76145S3ST TB334
Contextual Info: HUF76145P3, HUF76145S3S Semiconductor Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the 145P3, innovative UltraFET process. HUF76 This advanced process technology

76129D

Abstract: 129D3 motor drive HUF76129D3 HUF76129D3S TB334
Contextual Info: HUF76129D3, HUF76129D3S Semiconductor Data Sheet 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the innovative UltraFET process. 129D3, This advanced process technology

76132P

Abstract: HUF76132P3 HUF76132S3S HUF76132S3ST TB334
Contextual Info: HUF76132P3, HUF76132S3S Semiconductor Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the innovative UltraFET process. This 132P3, advanced process technology

Contextual Info: HAJtms S HUF76129D3, HUF76129D3S S e m ic o n d u c to r 7 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 | Features • Logic Level Gate Drive • 20A, 30V • Ultra Low On-Resistance, ros ON = 0.016£2 • Temperature Compensating PSPICE Model

TC11E

Abstract: 19E-9 FDP8870 RS21E
Contextual Info: FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low

FDP047AN

Abstract: FDH047AN08A0 FDI047AN08A0 FDP047AN08A0 FDH047AN08 FDH047AN FDP047
Contextual Info: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • DC-DC converters and Off-line UPS • Qg(tot) = 92nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

Contextual Info: HUF75321D3ST Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low

tc150e3

Abstract: KP235 40V 60A MOSFET
Contextual Info: FDH038AN08A1 N-Channel PowerTrench MOSFET 75 V, 80 A, 3.8 m Ω Features Applications • R DS ON = 3.5 m Ω (Typ.), VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg(tot) = 125 nC (Typ.), VGS = 10 V • Battery Protection Circuit

Contextual Info: HUF75645P3, HUF75645S3S October 2013 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 75 A, 14 mΩ Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V

FDP3672

Abstract: diode marking 41a on semiconductor marking n6
Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

tc124e

Contextual Info: FDP8896_F085 N-Channel PowerTrench MOSFET 30V, 92A, 5.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low

Contextual Info: HUF75542P3 October 2013 Data Sheet N-Channel UltraFET Power MOSFET 80 V, 75 A, 14 mΩ Features Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

Contextual Info: HUF75631S3S October 2013 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 33 A, 40 mΩ Packaging Features JEDEC TO-263AB DRAIN FLANGE GATE SOURCE • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

Contextual Info: HUFA75645S3S December 2001 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 75 A, 14 mΩ Packaging Features JEDEC TO-263AB DRAIN FLANGE GATE SOURCE • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

FDP047AN08A0

Abstract: FDH047AN08A0 fairchild s1a diode fdp047an
Contextual Info: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • DC-DC converters and Off-line UPS • Qg(tot) = 92nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

67E-3

Abstract: FDI038AN06A0 FDP035AN06A0T FDP038AN06A0 DIODE N20 fdp038an06a0t
Contextual Info: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • rDS ON = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management

TC143E

Abstract: T 105 micro 25E3
Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ V GS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit

Contextual Info: HUF76132P3, HUF76132S3S Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. This 6132P advanced process technology 3, achieves the lowest possible on-resistance per silicon area,

118E-2

Abstract: KP120 TC292
Contextual Info: HUF76132P3, HUF76132S3S Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. This 6132P advanced process technology 3, achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75842P3 October 2013 Data Sheet N-Channel UltraFET Power MOSFET 150 V, 43 A, 42 mΩ Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.042Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

Contextual Info: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • rDS ON = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management