N20 N Search Results

50N20

Abstract: 42N20 DIODE N20 IXFH58N20 58N20
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH 58 N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous

50N20

Abstract: 42N20 4250A DIODE N20
Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 42 N20 IXTH/IXTM 50 N20 200 V 200 V ID25 RDS on 42 A 60 mΩ Ω Ω 50 A 45 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V

Contextual Info: □IXYS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 V DSS ^D25 200 V 200 V 74 A 68 A D DS on 35 mQ 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Maximum ratings Test conditions V DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS=1.0 M£2

N20A

Abstract: MS-001
Contextual Info: Revised January 1999 Package N20A 20-Lead Plastic Dual-In-Line Package PDIP , JEDEC MS-001, 0.300” Wide Package Number N20 1999 Fairchild Semiconductor Corporation n20a.prf www.fairchildsemi.com Package N20A January 1999

SO2222A

Abstract: SO2907A marking n20
Contextual Info: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A

SMD transistor n25

Abstract: O-N51A
Contextual Info: O-N20 SERIES Description: The products belong to our oven controlled crystal oscillator series explored for decades, with low phase noise, high stability, high shockproof, stable performance and leading technology in China Characteristics: ● small size ●

na 39

Abstract: SO2222A SO2907A
Contextual Info: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A

54F74

Abstract: F1024 SS02
Contextual Info: Philips Semiconductors Military FAST Products Product specification Dual D-type flip-flop 54F74 DESCRIPTION ORDER CODE PACKAGE DESCRIPTION* 14-Pin Ceramic DIP 54F74/BCA GDIP1-T14 14-Pin Ceramic FlatPack 54F74/BDA GDFP-T14 20-Pin Ceramic LLCC 54F74/B2A CQCC2-N20

Contextual Info: MECHANICAL DATA MLCC007 – OCTOBER 1994 FQ R-CDCC-N20 LEADLESS CERAMIC CHIP CARRIER 0.685 (17,40) 0.665 (16,89) 0.030 (0,76) MIN 0.357 (9,07) 0.343 (8,71) 0.092 (2,34) 0.069 (1,75) 10 11 0.028 (0,71) 0.022 (0,56) 0.008 (0,20) RAD TYP 0.608 (15,44) 0.592 (15,04)

Contextual Info: Materials: CuZn Plating: Nickel gal. n20 Material: 2,65 M16x1,5 Directive 2002/95/EC RoHS compliant DO NOT ALTER CAD DRAWING BY HAND Width across flats 18 Index: a 24.03.11 VF Ä3941 data sheet revised date drawn 19.09.08 appd. general tolerance: 0,0 0,00

Contextual Info: MECHANICAL DATA MLCC008B – APRIL 1997 HL R-CDCC-N20 LEADLESS CERAMIC CHIP CARRIER 0.685 (17,40) 0.665 (16,89) 0.030 (0,76) MIN 0.357 (9,07) 0.343 (8,71) 10 0.080 (2,03) 0.065 (1,65) 0.028 (0,71) 0.022 (0,56) 11 0.008 (0,20) RAD TYP 0.608 (15,44) 0.592 (15,04)

Contextual Info: MECHANICAL DATA MLCC009B – SEPTEMBER 1996 HM R-CDCC-N20 LEADLESS CERAMIC CHIP CARRIER 0.710 (18,03) 0.690 (17,53) 0.040 (1,02) MIN 0.408 (10,36) 0.392 (9,96) 10 0.091 (2,31) 0.069 (1,75) 11 0.028 (0,71) 0.022 (0,56) 0.008 (0,20) RAD TYP 0.500 (12,70) 0.050 (1,27)

S02222A

Abstract: S02222
Contextual Info: SO2222 S02222A r z 7 SGS-THOM SON Ä T # KfilOeilSILIOTIfi! «! SMALL SIGNAL NPN TRANSISTORS Type Marking S02222 N13 S02222A N20 • SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . MEDIUM CURRENT AF AMPLIFICATION

Contextual Info: Philips Semiconductors Military FAST Products Product specification Dual D-type flip-flop 54F74 DESCRIPTION ORDER CODE PACKAGE DESCRIPTION* 14-Pin Ceramic DIP 54F74/BCA GDIP1-T14 14-Pin Ceramic FlatPack 54F74/BDA GDFP-T14 20-Pin Ceramic LLCC 54F74/B2A CQCC2-N20

Contextual Info: SCOPE: CMOS, 12-Bit Multiplying D/A Converter Device Type: -01 -02 Generic Number: MX7541S x /883B MX7541T(x)/883B Case Outline(s). Outline Letter Q E Mil-Std-1835 GDIP1-T18 or CDIP2-T18 CQCC1-N20 Case Outline Package Code 18 Lead CERDIP J18 20-Pin Ceramic LCC L20

Contextual Info: SCOPE: CMOS DUAL 8-BIT BUFFERED MULTIPLYING D/A CONVERTER Device Type 01 Generic Number MX7628T x /883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter Q E Mil-Std-1835 GDIP1-T20 or CDIP2-T20 CQCC1-N20

Contextual Info: SCOPE: CMOS, µP-Compatible, 12-Bit D/A Converter Device Type: -01 -02 -03 Generic Number: MX7542S x /883B MX7542T(x)/883B MX7542GT(x)/883B Case Outline(s). Outline Letter Q E Mil-Std-1835 GDIP1-T16 or CDIP2-T16 CQCC1-N20 Case Outline Package Code 16 Lead CERDIP

MPQF110

Abstract: S-PQFP-N20
Contextual Info: MECHANICAL DATA MPQF110 – SEPTEMBER 2001 RGA S-PQFP-N20 PLASTIC QUAD FLATPACK 4,05 3,95 4,30 4,10 0,50 NOM/2 A “A” 4,30 4,10 B DETAIL “A” 4,05 3,95 0,50 NOM 20 1,00 NOM C0,70 Index “C” 0,25 0,09 S 1,00 0,95 MAX 0,50 1 0,50 NOM 1,00 NOM 0,75

Contextual Info: SCOPE: CMOS 8-Bit, µP-Compatible, 12-Bit D/A Converter Device Type: -01 -02 Generic Number: MX7548S x /883B MX7548T(x)/883B Case Outline(s). Outline Letter Q E Mil-Std-1835 GDIP1-T20 or CDIP2-T20 CQCC1-N20 Case Outline Package Code 20 Lead CERDIP J20 20-Pin Ceramic LCC

Contextual Info: Technical specification: n20 Rated voltage: IEC 61076-2-101 4pos 250 V M12x1 Current rating: IEC 61076-2-101 7,5 A bei 40°C, with 1,5 mm² Insulation resistance: IEC 60512 >=100 M Pollution degree: IEC 60664-1 3/2 Degree of protection: IEC 60529 IP 67, in mated

M0220

Abstract: M0-220 S-PQFP-N20
Contextual Info: MECHANICAL DATA MPQF122 – FEBRUARY 2002 RGW S-PQFP-N20 PLASTIC QUAD FLATPACK 5,15 4,85 5,15 4,85 Pin 1 Index Area Top and Bottom 1,00 0,80 0,20 REF. Seating Plane 0,05 0,00 0,08 3,25 SQ MAX 20X 0,75 0,35 0,65 1 5 20 6 16 10 15 11 20X 2,60 Exposed Thermal Die Pad

IXFN106N20

Contextual Info: HiPerFETTM Power MOSFET IXFN 106 N20 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Preliminary data * 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous

Contextual Info: Hermetic Packages for Integrated Circuits Ceramic Leadless Chip Carrier Packages CLCC J20.C MIL-STD-1835 CQCC3-N20 (C-13) 20 PAD CERAMIC LEADLESS CHIP CARRIER PACKAGE 0.010 S E H S D INCHES D3 j x 45o E3 B E h x 45o 0.010 S E F S A A1 PLANE 2 PLANE 1 -E-

TB-340

Abstract: n20 n WTB340 pcb CIRCUIT diagram
Contextual Info: Evaluation Board and Circuit '1 N20 J N29 N36CEMPTY N35ŒMPTY) TB-340 NOTES: 1. SMA FEMALE CONNECTORS. 2. PCB MATERIAL: FR4 GRADE P C L - F R - 2 2 6 OR EQUIVALENT, DIALECTRIC T H IC K N E S S = .0 2 5 DWG THIS NO: DIALECTRIC C 0 N S T A N T = 4 .5 , INCH.