N20 N Search Results

50N20

Abstract: 42N20 DIODE N20 IXFH58N20 58N20
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH 58 N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous

fuse n20

Abstract: n20 fuse 160A Fuse bs88 curve bussmann hrc fuse bs88 200a BS88 fuse curve bs88 160A fuse curve
Contextual Info: Bussmann BS88, IEC269 N20 Industrial HRC Fuse Links 660V Special Slotted Tag Arrangement Time-Current Characteristic Curve 125A 160A 200A 250A 315A Dimensional Data Carton Quantities: 1 per carton all ratings Ordering Code: Rating followed by N20 2 Catalog

PA6 GF 30

Abstract: IEC 61076-2-101 61076-2 AWG18 60512-9a 4300-097 IEC 60512-2 PA6 GF PA6 GF 40
Contextual Info: Technical specification: ~28,5 n20 43 Female connector M12x1 field attachable n20 5 max. external cable diameter see table 1 2 4 4pos 250 V 5pos 60 V Current rating: IEC 61076-2-101 4A at 40°C Insulation resistance: IEC 60512-2 >=10 G Ù Pollution degree:

PA6 GF 30

Abstract: IEC 61076-2-101 ISO 2768 PA6 PA6 GF 40 ISO 2768-M PA6 GF 10 ISO 2768 m12x1 female connector AWG18 61076-2-101
Contextual Info: Technical specification: ~57 n20 Female connector M12x1 field attachable max. external cable diameter see table n20 1 4 2 3 1 5pos 60 V Current rating: IEC 61076-2-101 4A at 40°C Insulation resistance: IEC 60512-2 >=10 GÙ Pollution degree: IEC 60664-1 3/2

74n20

Contextual Info: High Current MegaMOSTMFET VDSS IXTK 74 N20 IXTH 68 N20 ID25 200 V 200 V RDS on 74 A 35 mW 68 A 35 mW N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ

SMD diode N20

Abstract: IXFH58N20 30n20
Contextual Info: Hi DIXYS V DSS HiPerFET Power MOSFETs IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings Test Conditions V DSS T , - 25°C to 150°C 200 V Voa„ T , = 25°C to 150°C; RGS = 1 MS2

50N20

Abstract: 42N20 4250A DIODE N20
Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 42 N20 IXTH/IXTM 50 N20 200 V 200 V ID25 RDS on 42 A 60 mΩ Ω Ω 50 A 45 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V

Contextual Info: □IXYS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 V DSS ^D25 200 V 200 V 74 A 68 A D DS on 35 mQ 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Maximum ratings Test conditions V DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS=1.0 M£2

1534F

Abstract: 50n20
Contextual Info: IXTH/IXTM 42 N20 IXTH/IXTM 50 N20 MegaMOS FET V " dss ^D25 200 V 200 V 42 A 50 A D DS on 60 mi2 45 mQ N-Channel Enhancement Mode Symbol Test Conditions V ' DSS T, = 2S°C to 150°C V„GR T, = 25°C to 150°C; Po Maximum Ratings = 1 M£i 200 V 200 V Continuous

mq68

Contextual Info: OIXYS VDSS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 200 V 200 V RDS on ^D25 74 A 35 mQ 68 A 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings VOSS Tj = 25 °C to150 °C 200 V V™ Tj = 25°C to 150°C; RGS= 1 .0 M il

N20A

Abstract: MS-001
Contextual Info: Revised January 1999 Package N20A 20-Lead Plastic Dual-In-Line Package PDIP , JEDEC MS-001, 0.300” Wide Package Number N20 1999 Fairchild Semiconductor Corporation n20a.prf www.fairchildsemi.com Package N20A January 1999

RFP12N18

Abstract: RFP12N20 "Harris Corporation 1998" AN7254 RFM12N18 RFM12N20 TB334 RFM12
Contextual Info: [ /Title RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20 /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM12N18, RFM12N20, RFP12N18, RFP12N20

12.5 MHZ crystal

Contextual Info: O-N20 SERIES Description: The products belong to our oven controlled crystal oscillator series explored for decades, with low phase noise, high stability, high shockproof, stable performance and leading technology in China. Characteristics: ● small size

Contextual Info: O-N20 SERIES Description: The products belong to our oven controlled crystal oscillator series explored for decades, with low phase noise, high stability, high shockproof, stable performance and leading technology in China Characteristics: ● s mall s ize

SO2222A

Abstract: SO2907A marking n20
Contextual Info: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A

SMD transistor n25

Abstract: O-N51A
Contextual Info: O-N20 SERIES Description: The products belong to our oven controlled crystal oscillator series explored for decades, with low phase noise, high stability, high shockproof, stable performance and leading technology in China Characteristics: ● small size ●

n20 n

Contextual Info: O-N20 SERIES Description: The products belong to our oven controlled crystal oscillator series explored for decades, with low phase noise, high stability, high shockproof, stable performance and leading technology in China. Characteristics: ● s mall size

na 39

Abstract: SO2222A SO2907A
Contextual Info: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A

Contextual Info: SPECIFICATIONS PARAMETERS RESONANT FREQUENCY RESONANT IMPEDANCE MAX MAX INPUT VOLTAGE CAPACITANCE @ 1kHZ PLATE MATERIAL OPERATING TEMPERATURE STORAGE TEMPERATURE VALUES 2,000 ± 500 300 30 45,000 ± 30% BRASS -20 ~ +70 -30 ~ +80 n20 UNITS Hz Ohm Vp-p pF

Contextual Info: SPECIFICATIONS PARAMETERS RESONANT FREQUENCY RESONANT IMPEDANCE MAX MAX INPUT VOLTAGE CAPACITANCE @ 1kHZ PLATE MATERIAL OPERATING TEMPERATURE STORAGE TEMPERATURE VALUES 2,000 ± 500 300 30 45,000 ± 30% BRASS -20 ~ +70 -30 ~ +80 n20 UNITS Hz Ohm Vp-p pF

54F74

Abstract: F1024 SS02
Contextual Info: Philips Semiconductors Military FAST Products Product specification Dual D-type flip-flop 54F74 DESCRIPTION ORDER CODE PACKAGE DESCRIPTION* 14-Pin Ceramic DIP 54F74/BCA GDIP1-T14 14-Pin Ceramic FlatPack 54F74/BDA GDFP-T14 20-Pin Ceramic LLCC 54F74/B2A CQCC2-N20

philips dl 711 delay

Abstract: DL 711 PHILIPS
Contextual Info: Philips Semiconductors Military FAST Products Product specification Dual D-type flip-flop 54F74 DESCRIPTION ORDER CODE PACKAGE DESCRIPTION* 14-Pin Ceramic DIP 54F74/BCA GDIP1-T14 14-Pin Ceramic FlatPack 54F74/BDA GDFP-T14 20-Pin Ceramic LLCC 54F74/B2A CQCC2-N20

Contextual Info: MECHANICAL DATA MLCC007 – OCTOBER 1994 FQ R-CDCC-N20 LEADLESS CERAMIC CHIP CARRIER 0.685 (17,40) 0.665 (16,89) 0.030 (0,76) MIN 0.357 (9,07) 0.343 (8,71) 0.092 (2,34) 0.069 (1,75) 10 11 0.028 (0,71) 0.022 (0,56) 0.008 (0,20) RAD TYP 0.608 (15,44) 0.592 (15,04)

Contextual Info: Materials: CuZn Plating: Nickel gal. n20 Material: 2,65 M16x1,5 Directive 2002/95/EC RoHS compliant DO NOT ALTER CAD DRAWING BY HAND Width across flats 18 Index: a 24.03.11 VF Ä3941 data sheet revised date drawn 19.09.08 appd. general tolerance: 0,0 0,00