N14 189 Search Results

HG1133G

Abstract: HG1131G HG1077G hg1133 DL7670 HG1075G HG-1133 NAG161 DL7670G IC N141
Contextual Info: -7 3 i % 5ê £ it ñ íi a^y-r.'-Y fck GL9E100 =a> GL8K10 HG1075G HG1077G HG1Í05G H^xi Iu7<-i DL-7671G t !> -f nm n -r —v 1 >- > X DL-7673G HG1131G HG1133G N AG131 NKG131 N14 * ? > - it úíj ft tì T„ = 25’CÌ V n y GL8E100 GL9K10 DL-7670G £ AA

Allen-Bradley W heater elements

Abstract: Allen-Bradley heater elements Allen-Bradley bulletin 815 type a Allen-Bradley bulletin 705 Allen-Bradley bulletin 712 4-02-4024 Allen-Bradley 500 heater elements Allen-Bradley bulletin 815 Allen-Bradley starter 709 N7812
Contextual Info: BULLETIN c m T&w PRODUCT I 815 DATA TYPEN HEATERELEMENTS HEATER ELEMENT SELECTION - The “Full Load Amps.” listed in the tables are to be used for heater element selection. The rating of the relay in amperes at 40” C is 115% of the “Full Load Amps.” listed for the “Heater Type No.”

n14 167

Abstract: PA-PGA209-01
Contextual Info: PA-PGA209-01 Map Rev B, 8/2/94 189,168 106,85 22,1 147,126 64,43 1,22 209,188 125,105 42,21 167,146 84,63 Bottom View-Base PGA A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 B1 Base 3 24 22 43 45 66 91 85 87 108 112 126 128 149 191 169 170 4 PGA

DL-7750R

Abstract: HD1131R DL7750R HD11050 hd11310 NARG161 HD-11330 HD1075 HD-11310 DL-76510
Contextual Info: -65- « « 'S g it tfc ?, 1-f y 4-1 fe 3 * > ‘7 / “ K * tr > -f- V K K w •7t ¥ m f t ~k. f t 1 Í 7 ’^ 2 5 - C fö \7'„ = 25:C i Dp WHtit iá t . E n Xp (nm' AA (nm) 1F (m A ) G a A IA s 660 20 10 •9] y — K lv im cd) I f (m A ) (V ) 10 3.4

DL7750R

Abstract: HD-11330 hd11310 DL-7750R DL-76510 DL7751R HD11050 dl76500 7750R DL-7751R
Contextual Info: -65- « « 'S g it tr > tfc ?, fe 3 * > ‘7 / “ K * 1-f y 4-1 K K •7t ¥ m ft f t ~k. 1 Í 7 ’^ 2 5 - C w fö \7'„ = 25:C i Dp -f- V WHtit iá t . E n (nm' AA (nm) G a A IA s 660 20 10 1.8 G aAsP 635 35 20 1.8 G a A IA s 660 20 G aAsF 635 35 Xp

SL-2283

Abstract: LN513YK NAA141 NAA143 NAA145 NAA147 NAA161 NKA141 NKA143 NKA145
Contextual Info: -69- ¿2 £ 3S % fe it n - t to m ! t „= 25“C ü -k. Æ tö i.Ta = 25’Ci Dp }± 3 Í> -T /-K •± •S it iligUlÜHÖ; ¡i -f ' S C I w m - i l '/ - K X9 'v - Af nm AA If (nm) im A) I\ If (m cd) im A ) Vf 'V i «III;! If Im A) ¡//A) Vr \V ) I f im A)

TLR306

Abstract: TLR308 HDSP-3733 HDSP-7303 HDSP-3731 HDSP-H101 hdsp 3731 HDSP-3401 HDSP-3403 HDSP-5503
Contextual Info: -67— £ A •i t ^ % tt it il- •f >-f. h n 3Z> -r / - K AA Ai ’ nmi 'nm¡ ly ImAi 1Í ( T„ = 25°C & ^ a iS I lŒ a n it r a m m itm Vf If <medí im A 1 cV I If Ih CmAi ^ A tè ; t „= 25‘C 1 « Jf^ s Dp m i Vu (V i '»mA) 7) m ill iV ; re i

01e3

Abstract: SKB 30 / 02 SKB 7 02 AN9321 AN9322 HUF75631SK8 HUF75631SK8T MS-012AA TB334
Contextual Info: interrii H U F 7 5 6 3 1 S K 8 Data S h eet O c to b e r 1999 F ile N u m b e r 4 78 5 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance BRANDING DASH - rDS ON = 0 -0 3 9 Q , VGS = 10 V • Simulation Models

TLR313

Abstract: TLR352 TLR-313 TLR312 s336t TLR353 TLRA347S NAR103 NAR105 NAR107
Contextual Info: -66- •i t ^ È•J f t ü it fe 3 Í/ - 7 / - K £ X f-IKI? ses H ö m m itm f t j\ 'æ Ta= 25’0 W liiÜ TSŒ S ta f f i« $ s + t £ I f Ap AA I f Iv (nm (nm) (mA) (mcd) (mA) # v —y W (V ) I f la (mA) (/¿A) I f Vu (V) (mA) {T „ = 25°C) m ím %

DFRC

Abstract: 86130 2A1050 AN7254 AN7260 ITF86130SK8T MS-012AA TB370 bv164 RS391
Contextual Info: in t e ITF86130SK8T r r ii J a n u a ry . Data Sheet 14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET File Num ber 4798.2 Features • Ultra Low On-Resistance ‘ Packaging r D S O N = 0 .0 0 7 8 a VGS= 10V ‘ rDS(ON) = 0 .0 1 0 a VGs = 4.5V

TB370

Abstract: AN9321 AN9322 HUF75531SK8 HUF75531SK8T MS-012AA
Contextual Info: HUF75531SK8 Data Sheet December 2001 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER

HUF75631SK8

Abstract: HUF75631SK8T MS-012AA TB334 AN7254 AN7260 AN9321 AN9322
Contextual Info: HUF75631SK8 Data Sheet October 1999 File Number 4785 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.039Ω, VGS = 10V BRANDING DASH 5 1 2 3 • Simulation Models - Temperature Compensated PSPICE and SABER

lambda IC 101

Abstract: AN7254 AN7260 ITF86172SK8T MS-012AA TB370 vj04
Contextual Info: ITF86172SK8T interrii January. m i Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET File Number 4809.1 Features • Ultra Low On-Resistance Packaging ‘ rDS ON = 0 .0 1 6£i, v gs = - 1 0 V S 0 8 (JEDEC MS-012AA) ‘ rDS(ON) = 0.023i2, VGS = - 4 .5 V

Contextual Info: HUFA75531SK8 TM Data Sheet November 2000 File Number 4953 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER

T25 4 h5

Abstract: AF4 equivalent AF14 160 e7 af17 AR29 J9-J14 AC22 AE23 EPF10K130E
Contextual Info: EPF10K130E Device Pin-Outs ver. 1.1 Pin Name 1 MSEL0 (3) MSEL1 (3) nSTATUS (3) nCONFIG (3) DCLK (3) CONF_DONE (3) INIT_DONE (4) nCE (3) nCEO (3) nWS (5) nRS (5) nCS (5) CS (5) RDYnBUSY (5) CLKUSR (5) DATA7 (5) DATA6 (5) DATA5 (5) DATA4 (5) DATA3 (5) DATA2 (5)

FDD8870_NL

Abstract: OC-86 FDD8870 FDU8870
Contextual Info: FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

AF14

Abstract: AC22 AE23 EPF10K130E AJ32 AE10-AE11 AE20-AE21
Contextual Info: EPF10K130E Device Pin-Outs ver. 1.1 Pin Name 1 MSEL0 (3) MSEL1 (3) nSTATUS (3) nCONFIG (3) DCLK (3) CONF_DONE (3) INIT_DONE (4) nCE (3) nCEO (3) nWS (5) nRS (5) nCS (5) CS (5) RDYnBUSY (5) CLKUSR (5) DATA7 (5) DATA6 (5) DATA5 (5) DATA4 (5) DATA3 (5) DATA2 (5)

Contextual Info: HUF76121SK8 S em iconductor Data Sheet April 1999 • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

FDD8870

Abstract: FDU8870
Contextual Info: tm FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

lambda IC 101

Abstract: ITF86182SK8T MS-012AA TB370
Contextual Info: in t e ITF86182SK8T r r ii Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET J a n u a ry . mi File Num ber 4797.2 Features • Ultra Low On-Resistance ‘ rDS ON = 0 .0115i2,v Gs = - 1 0 V Packaging S 0 8 (JEDEC MS-012AA) BRANDING DASH

Contextual Info: HUFA75631SK8 TM Data Sheet November 2000 File Number 4959 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH 5 • Simulation Models - Temperature Compensated PSPICE® and SABER Electrical Models - Spice and SABER Thermal Impedance Models

Contextual Info: FDD8870 / FDU8870 tm N-Channel PowerTrench MOSFET 30V, 160A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

tlr306

Abstract: HDSP-3733 TLR308 IC MAN6760 HDSP-3731 HP 5082-7651 HDSP-F003 HP 5082-7653 hp 5082-7750 hp 5082-7751
Contextual Info: -6 2 - IE f£ ffy £ it tfc £ its ? & £ fe /-K á' •± ¥ m # i i r „ = 25°C f t Jz Æ fë íT<,-= 25°C) ks > ipfifu n n A.P (nm) -£ v —K AX I f (nm) Im A) Iv I f Vf I f (m A) (V) 30 10 —5 5 —100 - 5 5 —100 33 5 30 10 —55—100 -5 5 -1 0 0

Contextual Info: ISL9N305ASK8T N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFET General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves