N14 167 Search Results

W16 sot 23

Abstract: rza series 51 ria 40 rba sot 23 sot 23 W16 Q-16
Contextual Info: R X A resistors isolated resistor networks features • • • • Thin film on silicon Electrical and mechanical stability High integration (up to 12 terminating lines per package) Products with lead-free terminations meet RoHS requirements applications

RIA Q16

Contextual Info: R X A resistors isolated resistor networks features • • • • Thin film on silicon Electrical and mechanical stability High integration (up to 12 terminating lines per package) Products with lead-free terminations meet RoHS requirements applications

n14 167

Abstract: PA-PGA209-01
Contextual Info: PA-PGA209-01 Map Rev B, 8/2/94 189,168 106,85 22,1 147,126 64,43 1,22 209,188 125,105 42,21 167,146 84,63 Bottom View-Base PGA A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 B1 Base 3 24 22 43 45 66 91 85 87 108 112 126 128 149 191 169 170 4 PGA

RIA Q16

Abstract: RIA N08
Contextual Info: R X A resistors isolated resistor networks features • Thin film on silicon • Electrical and mechanical stability • High integration (up to 12 terminating lines per package) applications • Series termination • Pull-up/pull-down • Current limiting

Contextual Info: R X A resistors isolated resistor networks features • Thin film on silicon • Electrical and mechanical stability • High integration (up to 12 terminating lines per package) applications • Series termination • Pull-up/pull-down • Current limiting

Contextual Info: R X A resistors isolated resistor networks features • Thin film on silicon • Electrical and mechanical stability • High integration (up to 12 terminating lines per package) applications • Series termination • Pull-up/pull-down • Current limiting

Contextual Info: R X A resistors isolated resistor networks EU features • • • • Thin film on silicon Electrical and mechanical stability High integration (up to 12 terminating lines per package) Products with lead-free terminations meet EU RoHS and China RoHS requirements

RIA N08

Abstract: 1M resistor frequency appendix T16 KOA w16 sot23 RIA Q20 ria n16
Contextual Info: isolated resistor networks KOA’s thin film termination networks provide the ideal solution for demanding high speed/high frequency data applications. Compared to thick film networks these thin film components improve performance, while saving space and reducing costs. Sophisticated semiconductor processing

rba q16

Abstract: 12w sot-23 MIL-R-55342 sot-23 12w rba q20
Contextual Info: bussed resistor networks KOA’s thin film termination networks provide the ideal solution for demanding high speed/high frequency data applications by offering high performance while reducing cost and saving space. Compared to thick film networks, these thin film resistors provide reliability and stability

rba q16

Abstract: rba q20 sot 23 W16 rba sot 23 W16 sot 23
Contextual Info: bussed resistor networks KOA’s thin film termination networks provide the ideal solution for demanding high speed/high frequency data applications by offering high performance while reducing cost and saving space. Compared to thick film networks, these thin film resistors provide reliability and stability

Contextual Info: RB X , RD(X), RT(X), RNX resistors integrated passive components EU features • Thin film (metal film) resistor array on silicon wafer • Excellent resistance matching, TCR tracking and stabilities • Custom circuits are available with flexible layout (Different

rnx Q24

Contextual Info: RB X , RD(X), RT(X), RNX resistors integrated passive components EU features • Thin film (metal film) resistor array on silicon wafer • Excellent resistance matching, TCR tracking and stabilities • Custom circuits are available with flexible layout (Different

rba q16

Abstract: rza series
Contextual Info: resistors R X A isolated resistor networks EU features • • • • Thin film on silicon Electrical and mechanical stability High integration Products with lead-free terminations meet EU RoHS and China RoHS requirements applications • Series termination

lm3242

Abstract: LM356 op-amp datasheet LM356 LM6484 SC14421 LM380 spice lm7412 LM117 model SPICE LM356 audio amplifier pc preamp with bass treble circuit diagrams lm324
Contextual Info:  Welcome to National Semiconductor's latest Linear Designers' Guide! Included in this guide are: • Product selection trees • Associated guides with definitive specifications • Alphanumeric index, to assist in finding the product ID you are seeking

Contextual Info: resistors R X A isolated resistor networks EU features • • • • dimensions and construction Q20 Dimensions inches (mm) L W p .193 .236 .025 (4.90) (5.99) (0.635) .341 .236 .025 (8.66) (5.99) (0.635) Q24 .341 (8.66) .236 (5.99) .025 (0.635) Q28 .39 (9.9)

rza series

Abstract: appendix T16 KOA A-1002B RIA Q16
Contextual Info: 1733 Reader's Spreads pg1-203:document 1/27/09 4:07 PM Page 80 R X A resistors isolated resistor networks EU features • • • • Thin film on silicon Electrical and mechanical stability High integration Products with lead-free terminations meet EU RoHS

Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • rDS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 107V, 41A, 33mΩ Features Applications • r DS ON = 26mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

MOSFET S1A

Abstract: M060 45E-2
Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

fdp3672

Abstract: diode marking 41a on semiconductor 100E30
Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

FDP3672

Abstract: diode marking 41a on semiconductor marking n6
Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

TC143E

Abstract: T 105 micro 25E3
Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ V GS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit

Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit