N-MOSFET 150V 150MA Search Results

Contextual Info: PD-96930B 2N7590T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYS63134CM 300K Rads (Si) 0.090Ω

2N7590T3

Contextual Info: PD-96930C 2N7590T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYS63134CM 300K Rads (Si) 0.090Ω

2n7590

Contextual Info: PD-96930B 2N7590T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYS63134CM 300K Rads (Si) 0.090Ω

2N7590

Contextual Info: PD-96930B 2N7590T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYS63134CM 300K Rads (Si) 0.090Ω

JANSR2N7589U3

Abstract: IRHNJ63134 PD-96931B JANSF2N7589U3
Contextual Info: PD-96931B IRHNJ67134 JANSR2N7589U3 150V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/746 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) IRHNJ63134 300K Rads (Si) RDS(on) 0.088Ω 0.088Ω

JANSR2N7589U3

Contextual Info: PD-96931C IRHNJ67134 JANSR2N7589U3 150V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/746 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) IRHNJ63134 300K Rads (Si) RDS(on) 0.088Ω 0.088Ω

Contextual Info: PD-96931B IRHNJ67134 JANSR2N7589U3 150V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/746 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) IRHNJ63134 300K Rads (Si) RDS(on) 0.088Ω 0.088Ω

Contextual Info: PD-96959B 2N7581U2 IRHNA67164 150V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67164 Radiation Level 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 300K Rads (Si) 0.018Ω 56A* International Rectifier’s R6TM technology provides

2N7581

Abstract: 2N768 2N758 2N7581u2
Contextual Info: PD-96959B 2N7581U2 IRHNA67164 150V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67164 Radiation Level 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 300K Rads (Si) 0.018Ω 56A* International Rectifier’s R6TM technology provides

Contextual Info: PD-96997A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYB67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYB63134CM 300K Rads (Si) 0.090Ω 19A International Rectifier’s R6 TM technology provides

Contextual Info: PD-96997A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYB67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYB63134CM 300K Rads (Si) 0.090Ω 19A International Rectifier’s R6 TM technology provides

470pf

Contextual Info: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS PA85 • PA85A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • HIGH VOLTAGE — 450V (±225V) • HIGH SLEW RATE — 1000V/µS • HIGH OUTPUT CURRENT — 200mA

5a6 zener diode

Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Contextual Info: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical

Contextual Info: LTC4054L-4.2 150mA Standalone Linear Li-Ion Battery Charger in ThinSOT DESCRIPTION FEATURES n n n n n n n n n n n n n Programmable Charge Current Range: 10mA to 150mA No External MOSFET, Sense Resistor or Blocking Diode Required Complete Linear Charger in ThinSOT Package for

FR4 pcb

Contextual Info: PA79 PA79 P r o d u c t IInnnnoovvaa t i o n FFr roomm Power Operational Amplifier FEATURES DESCRIPTION The PA79 is a high voltage, high speed, low idle current op-amp capable of delivering up to 200mA peak output current. Due to the dynamic biasing of the input

capacitor 100 microfarad 50v

Abstract: PA78EU pa78 design
Contextual Info: PA78 PA78 P r o d u c t IInnnnoovvaa t i o n FFr roomm Power Operational Amplifier FEATURES DESCRIPTION The PA78 is a high voltage, high speed, low idle current op-amp capable of delivering up to 200mA peak output current. Due to the dynamic biasing of the input

AAT2430

Contextual Info: DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT2491 is a monolithically integrated dual N-channel high-voltage cascode-clamp lateral TrenchDMOS array. The dual-channel AAT2491 monolithically integrates

PA78EU

Abstract: variable resistor 50k PA86U
Contextual Info: PA86 PA86 P r o d u c t IInnnnoovvaa t i o n FFr roomm Power Operational Amplifier FEATURES DESCRIPTION The PA86 is a high voltage, high speed, low idle current op-amp capable of delivering up to 200mA peak output current. Due to the dynamic biasing of the input

vishay zener diode 1A 30v

Abstract: zener smd diode 3.3v 1w N mosfet 100v 600A zener diode 3.3v 10w zener 15v diode 300mA 1A 60V SCHOTTKY diode toshiba zener smd diode 6.2v 1w vishay 10w resistor 200V, 1W zener diode 314v Optocoupler
Contextual Info: ெࡔࡔॆӷ‫ິࠅ༹ڞ‬ ᆌᆩጀ๥1346 JosephāDeNicholas 2006౎3ሆ ᆅჾ ‫ݴ‬पఇ๕ āāLM5070HE ߛၳ ೠࠚ‫ۉ‬ୟӱጆோยऺᆩઠ༵ࠃᇑ āāྺକߵ਍‫ۉ‬ᇸ؏ൽઠߴPD‫ڪݴ‬पLjPSEॽࣷߴPD IEEE802.3afग़ඹ‫ڦ‬ᅜ໿ྪઍ‫(ۉ‬PoE)‫ۉ‬ᇸă޿‫ۉ‬ᇸ‫܀ڦ‬

DIODE SMD 44w

Abstract: power supply 100v 30a schematic smd transistor 44w 1A 60V SCHOTTKY diode toshiba 314v Optocoupler CMZ5936B LM5070 12v output panasonic diode C2012X7R1C224 smd 44w
Contextual Info: National Semiconductor Application Note 1346 Joseph DeNicholas March 2006 Introduction Classification Mode The LM5070 HE High Efficiency evaluation board is designed to provide an IEEE802.3af compliant, Power over Ethernet (PoE) power supply. The power supply features the

Pa3177NL

Abstract: LT3748 IGBT 48V 200A Si7738 BZT52C5 RC snubber mosfet design 750311591 flyback snubber c3748 B360 diode
Contextual Info: LT3748 100V Isolated Flyback Controller Features n n n n n n n n n n Description 5V to 100V Input Voltage Range 1.9A Average Gate Drive Source and Sink Current Boundary Mode Operation No Transformer Third Winding or Opto-Isolator Required for Regulation Primary-Side Winding Feedback Load Regulation

si7738

Abstract: Pa3177NL pa2467
Contextual Info: LT3748 100V Isolated Flyback Controller FEATURES n n n n n n n n n n DESCRIPTION The LT 3748 is a switching regulator controller specifically designed for the isolated flyback topology and capable of high power. It drives a low side external N-channel power

Pa3177NL

Abstract: LT3748 600V 300A igbt dc to dc boost converter IGBT 48V 200A Si7738 LT3748EMS PA2467NL DC1557 PA2367NL SBR8U60P5
Contextual Info: LT3748 100V Isolated Flyback Controller FEATURES DESCRIPTION n The LT 3748 is a switching regulator controller specifically designed for the isolated flyback topology and capable of high power. It drives a low side external N-channel power MOSFET from an internally regulated 7V supply. No third

1000w inverter PURE SINE WAVE schematic diagram

Abstract: 4000w audio amplifier 4000w AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v 200W AUDIO booster CIRCUIT DIAGRAM 5000w audio amplifier circuit diagram PA09 8 PIN TO-3 PACKAGE DIMENSIONS 3000w audio amplifier 5000w power amplifier circuit diagram power amplifier 5000W with schematic 50w ultrasonic generator 40khz
Contextual Info: For latest updates, please see Product SA01 SA02 SA03 SA04 SA06 SA07 SA13 SA14 SA16 SA50 SA51 PA01/73 PA02 PA03 PA04 PA05 PA07 PA08 PA09 PA10 PA12 PA19 PA21/25/26 PA41/42 PA44 PA45 PA46 PA51 PA61 PA81/82J