N-CHANNEL MOSFET 600V 36A Search Results

Contextual Info: SupreMOS FCA36N60NF TM tm N-Channel MOSFET, FRFET 600V, 36A, 95mΩ Features Description • RDS on = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

36N60

Abstract: 32N60 D-68623 ld25 sot-223
Contextual Info: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data IXFK/FN 36N60 IXFK/FN 32N60 HiPerFET Power MOSFET D vv DSS ^D25 600V 600V 36A 32A DS on 0.18Q 0.25Q 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions

APT34M60B

Abstract: APT34M60S MIC4452 AG124
Contextual Info: APT34M60B APT34M60S 600V, 36A, 0.19Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: APT34M60B APT34M60S 600V, 36A, 0.19Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: APT34M60B APT34M60S 600V, 36A, 0.19Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

36N60

Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623
Contextual Info: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)

Contextual Info: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)

fairchild 4245

Abstract: FCA36N60NF
Contextual Info: SupreMOS FCA36N60NF N-Channel tm SupreMOS®, FRFET®,MOSFET 600V, 36A, 95mΩ Features Description • RDS on = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS® MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

Contextual Info: APT34F60B APT34F60S 600V, 36A, 0.19Ω Max trr ≤250ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits

Contextual Info: APT34F60B APT34F60S 600V, 36A, 0.19Ω Max trr ≤250ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits

FCP36N60N

Abstract: fcp36N60 Mosfet application note fairchild FCp Series MOSFET 600V 36A
Contextual Info: SupreMOSTM FCP36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS on = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

Fairchild Semiconductor - Process

Abstract: FCP36N60N mosfet 600v
Contextual Info: SupreMOSTM FCP36N60N tm N-Channel MOSFET 600V, 36A, 90mΩ Features Description • RDS on = 81mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

FCB36N60N

Abstract: ISD36A MOSFET 600V 36A
Contextual Info: SupreMOSTM FCB36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS on = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

APT34F60B

Abstract: APT34F60S MIC4452
Contextual Info: APT34F60B APT34F60S 600V, 36A, 0.19Ω Max trr ≤250ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

NTE2989

Abstract: mosfet 10a 600v
Contextual Info: NTE2989 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D High Speed Switching D Low On–Resistance D No Secondary Breakdown D Low Driving Power D High Voltage D Repetitive Avalanche Rated Applications: D Switching Regulators D UPS D DC–DC Converters

NTE2995

Contextual Info: NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D RDS on = 0.65Ω Typical D Extremely High dv/dt Capability D Gate Charge Minimized D Gate−to−Source Zener Diode Protected Applications: D High Current, High Speed Switching D Ideal for Off−Line Power Supplies, Adaptor and PFC

10Kf6 diode

Abstract: 10KF6 10KF6 diode International Rectifier 10kf6 diode rectifier switch mode inverter circuit diagrams IRS2117 IRS21171 IRS2118 JESD22-A114 JESD78
Contextual Info: February 18, 2009 IRS211 7,71,8 (S) SINGLE CHANNEL DRIVER Product Summary IC Features • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20V

10Kf6 diode

Abstract: 10KF6 diode International Rectifier 10KF6
Contextual Info: February 18, 2009 IRS211 7,71,8 (S) SINGLE CHANNEL DRIVER Product Summary IC Features • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20V

relay finder 45.61

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schematic diagram 230VAC to 24VDC POWER SUPPLY

Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
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10Kf6 diode

Contextual Info: October 29th, 2008 IRS211 7,71,8 (S) SINGLE CHANNEL DRIVER Product Summary IC Features • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20V

220 volt ac relays switch ups converter circuit

Abstract: HUF76639 TO-251 footprint 6 PIN SMD IC FOR SMPS linear technology 6 PIN SMD IC 36A 6 FOR SMPS huf75652 MA8630 HIP1011 HIP6000 HIP6021
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CIRCUIT BREAKER AEG me 800

Abstract: catalog for 3RT series contactor* siemens Weidmuller upac Telemecanique catalog 9101900000 Siemens 4-20mA Loop Isolator catalog for 3RT Power contactor* siemens upac MCB 10 AMP 87426
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IR2133 application note

Abstract: IR2133 application notes
Contextual Info: Data Sheet No. PD60107 revX IR2133/IR2135 J&S & (PbF) IR2233/IR2235(J&S) & (PbF) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10V/12V to 20V DC and