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    N-CHANNEL MOSFET 40V 7A Search Results

    N-CHANNEL MOSFET 40V 7A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P
    Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P PDF
    TK5R1A08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Datasheet
    TK155E65Z
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ Datasheet
    TK090U65Z
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Datasheet
    TK5R3E08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Datasheet

    N-CHANNEL MOSFET 40V 7A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2804SS

    Abstract: 2804S N-Channel MOSFET 40V 7A
    Contextual Info: CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 1/9 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC2804Q8 BVDSS ID RDSON max N-CH 40V 7A 28mΩ P-CH -40V -6A 44mΩ Description The MTC2804Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8


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    C438Q8 MTC2804Q8 MTC2804Q8 UL94V-0 2804SS 2804S N-Channel MOSFET 40V 7A PDF

    fdd*8447l

    Abstract: fdd8447 FDD8447L inverter 12 V to 32v dc 40V 14A DPAK
    Contextual Info: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 54A, 8.5mΩ Features General Description „ Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer


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    FDD8447L fdd*8447l fdd8447 inverter 12 V to 32v dc 40V 14A DPAK PDF

    FDD8447L

    Abstract: fdd*8447l fdd8447 50a 30v 8.5m MOSFET
    Contextual Info: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features General Description „ Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer


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    FDD8447L FDD8447L fdd*8447l fdd8447 50a 30v 8.5m MOSFET PDF

    Contextual Info: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features General Description ̈ Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer


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    FDD8447L FDD8447L PDF

    FDB8447

    Abstract: FDB8447L Power MOSFET, Fairchild
    Contextual Info: FDB8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features General Description „ Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer


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    FDB8447L O-263AB FDB8447 FDB8447L Power MOSFET, Fairchild PDF

    FDD8447L

    Abstract: 50a 30v 8.5m MOSFET fdd8447 fdd*8447l 40V 14A DPAK
    Contextual Info: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5m: Features General Description „ Max rDS on = 8.5m: at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer


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    FDD8447L 50a 30v 8.5m MOSFET fdd8447 fdd*8447l 40V 14A DPAK PDF

    fdd*8447l

    Abstract: FDD8447L fdd8447
    Contextual Info: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 54A, 8.5mΩ Features General Description „ Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer


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    FDD8447L fdd*8447l fdd8447 PDF

    FDB8447L

    Contextual Info: FDB8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features General Description ̈ Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer


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    FDB8447L O-263AB FDB8447L PDF

    FDB8447L

    Abstract: FDB8447 fdb fairchild
    Contextual Info: FDB8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features General Description „ Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer


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    FDB8447L O-263AB FDB8447L FDB8447 fdb fairchild PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT4450 Power MOSFET 7A, 40V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT4450 is an N-channel MOSFET. it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge.


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    UT4450 UT4450 UT4450L-S08-R UT4450G-S08-R UT4450L-S08-T UT4450G-S08-T QW-R502-898, PDF

    Contextual Info: ZXMN4A06GQ Green ADVANCED INFORMATION Product Summary V BR DSS RDS(ON) 40V 0.05Ω @ VGS = 10V 40V N-CHANNEL ENHANCEMENT MODE MOSFET Features ID TA = +25°C 7A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


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    ZXMN4A06GQ AEC-Q101 DS36694 PDF

    Contextual Info: ZXMN4A06G Green ADVANCED INFORMATION Product Summary V BR DSS RDS(ON) 40V 0.05Ω @ VGS = 10V 40V N-CHANNEL ENHANCEMENT MODE MOSFET Features ID TA = +25°C 7A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


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    ZXMN4A06G AEC-Q101 DS33545 PDF

    Contextual Info: FDS4080N3 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    FDS4080N3 PDF

    FDS4080N7

    Contextual Info: FDS4080N7 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    FDS4080N7 FDS4080N7 PDF

    FDS4080N3

    Contextual Info: FDS4080N3 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    FDS4080N3 FDS4080N3 PDF

    FDS4080N7

    Contextual Info: FDS4080N7 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    FDS4080N7 FDS4080N7 PDF

    Contextual Info: FDP8447L tm N-Channel PowerTrench MOSFET 40V, 50A, 8.7mΩ Features General Description ̈ Max rDS on = 8.7mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver


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    FDP8447L O-220 FDP8447L PDF

    FDS4080N3

    Contextual Info: FDS4080N3 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    FDS4080N3 FDS4080N3 PDF

    FDS4080N3

    Contextual Info: FDS4080N3 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    FDS4080N3 FDS4080N3 PDF

    FDP8447L

    Contextual Info: FDP8447L tm N-Channel PowerTrench MOSFET 40V, 50A, 8.7mΩ Features General Description „ Max rDS on = 8.7mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver


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    FDP8447L O-220 FDP8447L PDF

    Contextual Info: FDS4080N3 40V N-Channel Bottomless PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    FDS4080N3 PDF

    A4044

    Contextual Info: FDS4080N7 40V N-Channel Bottomless PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    FDS4080N7 A4044 PDF

    FDS4080N7

    Contextual Info: FDS4080N7 40V N-Channel Bottomless PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    FDS4080N7 FDS4080N7 PDF

    FDS4080N3

    Contextual Info: FDS4080N3 40V N-Channel Bottomless PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    FDS4080N3 FDS4080N3 PDF