N-CHANNEL MOSFET 400V 25A Search Results

IRFP360

Abstract: TB334
Contextual Info: IRFP360 Data Sheet January 2002 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field

irfp360

Abstract: TB334
Contextual Info: IRFP360 Data Sheet July 1999 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field

IRF360

Contextual Info: PD - 90518 IRF360 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF360 400V 0.20Ω ID 25A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF360

Abstract: IRF3601 mosfet irf360
Contextual Info: PD - 90518 IRF360 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF360 400V 0.20Ω ID 25A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

irfp360

Contextual Info: IRFP360 S e m iconductor Data Sheet July 1999 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field

BT 13A

Abstract: IRFP360
Contextual Info: IRFP360 Data Sheet Title FP3 bt A, 0V, 00 m, an- 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

Contextual Info: PRODUCT G Â T A I 1 N~CHANNEL ENHANCEMENT MOS FET 400V, 150A. 0.035D SDF150NA40 HE FEATURES • RUGGED PACKAGE • H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE

mosfet 500v 10A

Abstract: FL14KM-10A
Contextual Info: MITSUBISHI POWER MOSFET RY FL14KM-10A INA ELIM on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL14KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3

FL14KM-10A

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2N6792 JANTX

Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
Contextual Info: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds

IR2153Z

Abstract: ir2153
Contextual Info: PD-60024D IR2125Z CURRENT LIMITING SINGLE CHANNEL DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 12 to 18V n Undervoltage lockout

IR2125Z

Contextual Info: Data Sheet No. PD-6.024A IR2125Z CURRENT LIMITING SINGLE CHANNEL DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 12 to 18V n Undervoltage lockout

IGBT 500V 35A

Abstract: IR2125Z MO-036aa
Contextual Info: PD - 60024B IR2125Z CURRENT LIMITING SINGLE CHANNEL DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 12 to 18V n Undervoltage lockout

IR2125Z

Abstract: IR2153Z
Contextual Info: PD - 60024C IR2125Z CURRENT LIMITING SINGLE CHANNEL DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 12 to 18V n Undervoltage lockout

NTE2969

Contextual Info: NTE2969 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Low Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower Leakage Current D Low Static Drain–Source On–State Resistance

5a6 zener diode

Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Contextual Info: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical

IJW120R070T1

Abstract: IJW120R silicon carbide
Contextual Info: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description

FL14KM-10A

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

irf440

Contextual Info: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t

TV flyback transformer pinout

Abstract: xbox schematic diagram xbox power supply schematic diagram ncp1207 smd transformer less power supply 12 volt 3A 600 volt mosfet TRANSISTOR SMD C22B SMD ZENER DIODE 26b NCP1337 TV flyback transformer
Contextual Info: TND334/D Rev. 2, JUN − 2009 50 W Four−Output Internal Power Supply for Set Top Box Reference Design Documentation Package Semiconductor Components Industries, LLC, 2009 June, 2009 − Rev. 2 1 Publication Order Number: TND334/D Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes

LT812

Contextual Info: UN IT RO DE CORP 9347963 TE ¿ F | cî 3M7cib3 U N I T R O D E CORP 92D 10554 GD1DSSM D POWER MOSFET TRANSISTORS 4 0 0 V olt, 1 .8 O h m N -Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

relay finder 45.61

Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415
Contextual Info: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .