N-CHANNEL IGBT Search Results

DS4137

Contextual Info: GP400LSS12S 0IT I M ITEL S E M IC O N D U C T O R Powerline N-Channel IGBT Module DS4137 - 7.4 Decem ber 1998 S upersedes July 1998 version, DS4137 - 7.3 The GP400LSS12S is a single switch 1200 volt, robust n channel enhancem ent mode insulated gate bipolar

DS4737-4

Abstract: T0247 ac ITS08C06B ITS08C06P ITS08C08A T0247
Contextual Info: ITS08C06 MITEL SEM ICON D UCTOR Medium Frequency Powerline N-Channel IGBT with Ultrafast Diode Supersedes March 1999, version DS4737-3.0 DS4737-4.0 April 1999 Key Parameters The ITS08C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

igbt ignition

Abstract: ignition IGBTS drivers Intersil ignition IGBT GE 443 HGT1S14N37G3VLS HGT1S14N37G3VLS9A HGTP14N37G3VL
Contextual Info: HGT1S14N37G3VLS, HGTP14N37G3VL Data Sheet July 2000 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an

transistor 80505

Contextual Info: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S PRELIMINARY INFORMATION DS4715-1.3 ITS60F06 POWERLINE N-CHANNEL IGBT The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

IR2125Z

Abstract: IR2153Z
Contextual Info: PD - 60024C IR2125Z CURRENT LIMITING SINGLE CHANNEL DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 12 to 18V n Undervoltage lockout

POWERLINE 4 PRO

Contextual Info: Si GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4738-2.1 ITS13C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS13C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4754-2.1 ITS35C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS35C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

plessey sp

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4740-2.1 ITS40C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS40C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4739-2.1 ITS23C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS23C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: GEC P L ES SE Y S i SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4753-2.1 IT S 1 5 C 1 2 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS15C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N -C H A N N E L IGBT T his Logic Level Insulated G ate B ip o la r T ra n s is to r IG BT

Contextual Info: TOSHIBA MIG10J855H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT TEN TA TIV E MIG10J855H Units in mm HIGH P O W ER SW ITC H IN G A PPLIC A TIO N S M O TO R C O N TR O L A PPLIC A TIO N S • Integrates Inverter, Converter Power Circuits in One Package.

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR MGP20N35CL
Contextual Info: MOTOROLA Order this document by MGP20N35CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N35CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

NT 407 F TRANSISTOR TO 220

Abstract: MOTOROLA TRANSISTOR T2 NT 407 F MOSFET TRANSISTOR MGP20N40CL 632 transistor motorola mosfet ignition coil NT 407 F TRANSISTOR
Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

MG150J2YS1

Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG150J2YS1 HIGH P OWER S W I T C H I N G APPLICATIONS. M O T O R C O N TROL APP LICATIONS. . High Input Impedance . High Speed : tf~0. 35jis Max. trr-O.25 m 5 (Max.) . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode

Toshiba transistor Ic 100A

Contextual Info: TOSHIBA TENTATIVE GT25Q301 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL IGBT GT25Q301 HIGH PO W E R SWITCHING APPLICATIONS U n it in mm M OTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode H ig h Speed : tf= 0.40^s M ax. Lo w Satu ratio n Voltage : V c e

MG400H1US1

Abstract: LF400A LF400
Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG400H1US1 HIGH P OWER S W I T C H I N G APPLICATIONS. M O T O R C O N T R O L A PPLICATIONS. . High Input Impedance . High Speed : tf = 1. Ofis Max. trr=0.5ys(Max.) . Low Saturation Voltage: V q e (sat)= 5 .OV(Max.) . Enhancement-Mode

MG15H6ES1

Contextual Info: MG15H6ES1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER S W I T C H I N G APPLICATIONS. Unit in mm M O T O R C O N T R O L A P P LICATIONS. . The Electrodes are Isolated from Case. . 6 IGBTs are Built: Into 1 Package. . Enhancement-Mode . Low Saturation Voltage

MG75Q2YS40

Abstract: VGEV12
Contextual Info: TOSHIBA MG75Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 -F A ST -O N -T A B #110 High Input Impedance High Speed : tf= O.ô^s Max. trr = 0.5/æ (Max.) Low Saturation Voltage

MG75Q2YS11

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input im pedance • High speed: tf = 1 .0[is Max. • Low saturation: V CE tn- = 0.5 n s (Max.)

RG30H

Contextual Info: Preliminary SGR20N40L / SGU20N40L N-CHANNEL IGBT FEATURES * High Input Impedance * High Peak Current Capability 150A * Easy Gate Drive APPLICATIONS *Strobe Flash ABSOLUTE MAXIMUM RATINGS Symbol Characteristics V Collector-Emitter Voltage qes Rating Units

Contextual Info: TOSHIBA INSULATED GATE BIPO LAR TRAN SISTO R MG50Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT 4-FA ST-O N -TA B * 100 High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: tf = 1 .Ops Max. • Lo w saturation:

Contextual Info: TOSHIBA TENTATIVE G T 1 0 J3 1 1 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd G eneration E n h anceme nt- Mode : tf= 0.30/iS M ax. H igh Speed Low S atu ratio n V oltage : V q e (s a t )= 2.7V (M ax.)

ED 115G

Abstract: P channel 1200v 25a IGBT MIG25Q804H
Contextual Info: TOSHIBA TENTATIVE MIG25Q804H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG25Q804H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage