N-CHANNEL 250V POWER MOSFET 40A Search Results

Contextual Info: STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40N25FSY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

mosfet 40a 200v

Abstract: RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1 STRH40N25FSY3
Contextual Info: STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N25FSY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge ■ Light weight

STRH40N25FSY3

Abstract: RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1
Contextual Info: STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA Features Type VDSS STRH40N25FSY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge

96N25T

Contextual Info: Preliminary Technical Information IXTC96N25T Trench Gate Power MOSFET VDSS ID25 = 250V = 40A Ω ≤ 31mΩ Electrically Isolated Back Surface RDS(on) N-Channel Enhancement Mode Avalanche Rated ISOPLUS220 (IXTC) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C

Contextual Info: Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTC96N25T = 250V = 40A Ω ≤ 31mΩ Electrically Isolated Back Surface RDS(on) N-Channel Enhancement Mode Avalanche Rated ISOPLUS220 (IXTC) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

FL20KM-5A

Abstract: THV100 fl20km5a
Contextual Info: MITSUBISHI POWER MOSFET ARY FL20KM-5A IMIN PREL . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL20KM-5A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE FS40SM-5 OUTLINE DRAWING D im ensions in mm 4.5 15.9MAX. , iw Tr 5.45 • V dss . 250V • TDS ON (MAX) . 0.0860

FL20KM-5A

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

MOSFET FK25SM

Contextual Info: MITSUBISHI Neh POWER MOSFET FK25SM-5 HIGH-SPEED SWITCHING USE FK25SM-5 OUTLINE DRAWING Dimensions in mm w O '2 4 • VOSS . 250V • rDS ON (MAX) . 0 .1 6 Í 2

K1397

Abstract: Shindengen Electric Mfg LTD141 2SK1397 F40W25
Contextual Info: L V X v U - X M ° 7 - M 0 S F E T LVX Series Power MOSFET OUTLINE DIMENSIONS 2SK 1397 Case MTO-3P [F40W25] 5.0 ± 250V 40A • M l < 3.3 a a •A * * [Unit ! mm] a -j l - E # « » Date code Ciss) 1f[C tîD ;W 7 7 .B A *§ M Î)'!/J ^ tV a & E IA J No.

Contextual Info: MITSUBISHI Neh POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE FS40SM-5 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 A oh iriv h o d CNJ 4>3.2 CNJ 3 3 4.4 1.0 D (D 5.45 5.45 0.6 2.8 4 Q@© •V d s s . 250V >rDS (ON (MAX).0.086Í2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE FS40SM-5 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 <t>3.2 5.45 0.6 4 Q w r V d s s .250V rDS ON (MAX) . 0.086Í2

FL20KM-5A

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

relay finder 45.61

Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415
Contextual Info: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .

schematic diagram 230VAC to 24VDC POWER SUPPLY

Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
Contextual Info: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .

complementary MOSFET 2sk

Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Contextual Info: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V

1000w audio amplifier circuit diagram class D

Abstract: 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 12v 1000W AUDIO AMPLIFIER SCHEMATIC 100W smps amplifier circuit diagram class D 1000w 1000w smps audio amplifier circuit diagram 1000w transistor audio amplifier circuit diagram SCHEMATIC 12v 1000w smps 1000W AUDIO AMPLIFIER class D
Contextual Info: -1- IRAUDPS1 12V System Scalable 250W to1000W Audio Power Supply For Class D Audio Power Amplifiers Using the IR2085 self oscillating gate driver And Direct FETS IRF6648 By Manuel Rodríguez CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of

5a6 zener diode

Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Contextual Info: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical

800w class d circuit diagram schematics

Abstract: SCHEMATIC 1000w smps 1000w SMPS CIRCUIT DIAGRAM 1000w class d circuit diagram schematics 500w class d circuit diagram schematics amplifier circuit diagram class D 1000w SCHEMATIC 12v 1000w smps 1000w audio amp circuit diagram 1000w audio amplifier circuit diagram class D 800w audio amplifier circuit diagram
Contextual Info: -1- IRAUDPS1 12V System Scalable 250W to1000W Audio Power Supply For Class D Audio Power Amplifiers Using the IR2085 self oscillating gate driver And Direct FETS IRF6648 By Manuel Rodríguez CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of

1000w subwoofer amplifier PCB layout

Abstract: IRS2085 IR2093 12v 1000W AUDIO AMPLIFIER amplifier circuit diagram class D 1000w 500w push-pull power schematic diagram 1000w smps audio amplifier circuit diagram 1000w SMPS CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 1000w amplifier circuit diagram
Contextual Info: -1- IRAUDPS1 12V System Scalable 250W to1000W Audio Power Supply For Class D Audio Power Amplifiers Using the IR2085 self oscillating gate driver And Direct FETS IRF6648 By Manuel Rodríguez CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of

FCA50CC50

Abstract: RL4R FBA50CA45 FBA50CA50 FBA75CA45 FBA75CA50 FCA75CC50 SF100 107506
Contextual Info: MOSFET MODULE FCA50CC50 UL;E76102 （M） FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（2 devices are serial connected with a fast recovery diode （trr≦100ns）reverse connected across each MOSFET.） The mounting base of the

2SK2532

Abstract: 54573 EN5457
Contextual Info: 2SK2532 Ordering number : EN5457 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2532 General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable