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    N-CHANNEL 1.25-W, 2.5-V MOSFET SOT23 Search Results

    N-CHANNEL 1.25-W, 2.5-V MOSFET SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P
    		Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P PDF
    TK5R1A08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Datasheet
    TK155E65Z
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ Datasheet
    TK090U65Z
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Datasheet
    TK5R3E08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Datasheet

    N-CHANNEL 1.25-W, 2.5-V MOSFET SOT23 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 * TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Si2302ADS-T1–E3 (Lead (Pb)–free)


    Original     		Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302DS 08-Apr-05 PDF

    VNLR02

    Abstract: A1 marking code Si2302DS na4a S-51353
    Contextual Info: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		Si2302DS O-236 OT-23) S-51353--Rev. 11-Dec-96 VNLR02 A1 marking code na4a S-51353 PDF

    Si2302DS

    Contextual Info: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		Si2302DS O-236 OT-23) S-53600--Rev. 22-May-97 PDF

    Si2302DS

    Contextual Info: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		Si2302DS O-236 OT-23) S-51353--Rev. 11-Dec-96 PDF

    Si2302DS

    Contextual Info: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		Si2302DS O-236 OT-23) S-53600--Rev. 22-May-97 PDF

    Si2302DS

    Contextual Info: Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2302DS O-236 OT-23) 18-Jul-08 PDF

    Si2302DS

    Contextual Info: Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2302DS O-236 OT-23) S-53600--Rev. 22-May-97 PDF

    BM2302

    Abstract: W10S
    Contextual Info: BM2302 N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage


    Original     		BM2302 O-236 OT-23) BM2302 W10S PDF

    Si2302DS

    Contextual Info: Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2302DS O-236 OT-23) 08-Apr-05 PDF

    SI2302ADS-T1-GE3

    Abstract: Si2302ADS Si2302ADS-T1 Si2302ADS-T1-E3
    Contextual Info: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S


    Original     		Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302ADS-T1-E3 Si2302ADS-T1-GE3 18-Jul-08 PDF

    Si2302ADS

    Abstract: Si2302ADS-T1-E3 2A marking Si2302ADS-T1 Si2302ADS-T1-GE3 2A marking code Code T5S 36A8
    Contextual Info: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S


    Original     		Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302ADS-T1-E3 Si2302ADS-T1-GE3 2A marking 2A marking code Code T5S 36A8 PDF

    Si2302ADS-T1

    Abstract: Si2302ADS-T1-GE3 Si2302ADS Si2302ADS-T1-E3 71831 vishay siliconix code marking
    Contextual Info: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S


    Original     		Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302ADS-T1-E3 Si2302ADS-T1-GE3 08-Apr-05 71831 vishay siliconix code marking PDF

    Si2302DS 2A

    Contextual Info: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302DS S-32044--Rev. 13-Oct-03 Si2302DS 2A PDF

    si2302ds

    Abstract: Si2302ADS Si2302DS 2A
    Contextual Info: Si2302ADS New Product Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2302ADS O-236 OT-23) Si2302DS S-20617--Rev. 29-Apr-02 Si2302DS 2A PDF

    Si2302ADS-T1-E3

    Abstract: Si2302ADS Si2302ADS-T1
    Contextual Info: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Si2302ADS-T1-E3 (Lead (Pb)-free)


    Original     		Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302ADS-T1-E3 08-Apr-05 PDF

    marking code vishay SILICONIX sot-23

    Contextual Info: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302DS 08-Apr-05 marking code vishay SILICONIX sot-23 PDF

    Si2302ADS-T1-E3

    Abstract: Si2302ADS Si2302ADS-T1
    Contextual Info: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Si2302ADS-T1-E3 (Lead (Pb)–free)


    Original     		Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302ADS-T1-E3 08-Apr-05 PDF

    Si2302ADS-T1

    Abstract: Si2302ADS Si2302DS
    Contextual Info: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302DS S-41772--Rev. 20-Sep-04 PDF

    Si2302ADS

    Abstract: Si2302ADS-T1 Si2302ADS-T1-E3 2A MARKING CODE
    Contextual Info: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Si2302ADS-T1-E3 (Lead (Pb)–free)


    Original     		Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302ADS-T1-E3 S-60773 08-May-06 2A MARKING CODE PDF

    SOT-563 SOT-666

    Abstract: marking 802 soic8 sot-563 MOSFET D1 20l sot-23 siliconix MARKING CODE mSOp-8 siliconix code marking to-220 marking code 20L sot-23 sot23 V30114-T1
    Contextual Info: Si1024X Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES D D D D D D D BENEFITS Very Small Footprint High-Side Switching Low On-Resistance: 0.7 W


    Original     		Si1024X OT-563 SC-89 SC70-6L SC89-6L Specification--PACK-0007-9 T-05206, AN826 SC-89: 20-Jun-03 SOT-563 SOT-666 marking 802 soic8 sot-563 MOSFET D1 20l sot-23 siliconix MARKING CODE mSOp-8 siliconix code marking to-220 marking code 20L sot-23 sot23 V30114-T1 PDF

    SI2302DS

    Contextual Info: Tem ic SÌ2302DS S e m i c o n d u c t o r s N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary V d s V H)S(on) (Q ) Id (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ Vgs = 2.5 V 2.4 20 TO-236 (SOT-23) G S T Ï Ï /' Top View SÎ2302DS (A2)* ♦Marking Code Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)


    OCR Scan     		2302DS O-236 OT-23) S-53600-- 22-May-97 SI2302DS PDF

    smd diode A2

    Abstract: 70.2 marking smd smd diode marking 6a SMD Transistor a2 smd transistor marking A2 n-Channel 1.25-W, 2.5-V MOSFET sot23 A2 diode smd 8v smd mosfet DIODE marking A2 SMD Transistors a2
    Contextual Info: Transistors SMD Type N-Channel 1.25-W, 2.5-V MOSFET KI2302DS SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2.


    Original     		KI2302DS OT-23 smd diode A2 70.2 marking smd smd diode marking 6a SMD Transistor a2 smd transistor marking A2 n-Channel 1.25-W, 2.5-V MOSFET sot23 A2 diode smd 8v smd mosfet DIODE marking A2 SMD Transistors a2 PDF

    n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

    Abstract: ST3402 MOSFET SOT-23 mosfet vgs 5v
    Contextual Info: N Channel Enhancement Mode MOSFET ST3402 4.0A DESCRIPTION The ST3402 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.


    Original     		ST3402 ST3402 OT-23-3L 50m-ohm 65m-ohm OT-23-3L n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR MOSFET SOT-23 mosfet vgs 5v PDF

    ST3402

    Abstract: 5.8A, 25V, N Channel MOSFET
    Contextual Info: ST3402 N Channel Enhancement Mode MOSFET 4A DESCRIPTION ST3402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		ST3402 ST3402 OT-23-3L OT-23-3L 5.8A, 25V, N Channel MOSFET PDF