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N-700-2
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Bivar
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Narr-O-Gide - Narrow Width Press in Card guides |
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588.18KB |
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N-700-2-CI
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Bivar
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Boxes, Enclosures, Racks - Card Guides - CARD GUIDE NARROW 7".078 NYL NAT |
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47.66KB |
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AD-2N7002KW
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JCET Group
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N-channel MOSFET in SOT-323 package with 60V drain-source voltage, 340mA continuous drain current, 2.5 ohm RDS(on) at 10V VGS, and ESD protection, suitable for load switching and DC/DC converters. |
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2N7002G
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Shikues Semiconductor
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N-Channel Enhancement Mode FET, VDS 60V, ID 340mA, RDS(ON) <2.5ohm @ VGS=10V, <3.0ohm @ VGS=4.5V. |
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2N7002K
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Shikues Semiconductor
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60V/0.5A, RDS(ON)=2000mΩ@VGS=10V, 2500mΩ@VGS=4.5V, SOT-23, Power Management in Desktop/DC-DC Converters. |
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2N7002W
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JCET Group
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N-channel MOSFET in SOT-323 package with 60 V drain-source voltage, 115 mA continuous drain current, 0.2 W power dissipation, and low on-resistance of 0.95 ohms at VGS = 10 V. |
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2N7002BK
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VBsemi Electronics Co Ltd
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N-Channel 60-V MOSFET in SOT-23 package with 2.8 ohm typical RDS(on) at 10 V VGS, low threshold voltage of 2 V, fast switching speed, 25 pF input capacitance, and 1200 V ESD protection. |
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AK2N7002
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK2N7002 with 60V drain-source voltage, 0.115A continuous drain current, RDS(ON) less than 3 ohms at VGS=5V, available in SOT-23 surface mount package. |
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2N7002T
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SLKOR
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HSSK2N7002
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Huashuo Semiconductor
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Dual N-channel 60V fast switching MOSFET in SOT-363 package with 2.3 ohm maximum RDS(on), 300 mA continuous drain current, and low gate charge for efficient switching in portable applications. |
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AK2N7002K
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AK Semiconductor
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AK2N7002K N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 0.3A continuous drain current, RDS(ON) less than 3 ohms at VGS=4.5V, available in SOT-23 surface mount package. |
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2N7002K
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Shenzhen Heketai Electronics Co Ltd
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N-channel MOSFET 2N7002K in SOT-23 package with 60 V drain-source voltage, 340 mA continuous drain current, low on-resistance of 1.7 ohms at 10 V gate voltage, and fast switching speed. |
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AD-2N7002K
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JCET Group
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N-channel MOSFET in SOT-23 package with 60V drain-source voltage, 340mA continuous drain current, 0.9 ohm typical RDS(on) at 10V VGS, suitable for load switching, power tools, LED applications, and DC/DC converters. |
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2N7002E
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VBsemi Electronics Co Ltd
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N-Channel 60-V MOSFET in SOT-23 package with 2.8 ohm RDS(on) at 10 V VGS, low threshold voltage of 2 V typ, 25 pF input capacitance, and 1200V ESD protection, suitable for high-speed switching applications. |
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JMTD2N7002KS
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel MOSFET with 60V drain-source voltage, 0.2A continuous drain current, RDS(on) less than 2.8 ohms at VGS = 5V, available in DFN1006-3L package. |
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2N7002AK
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AK Semiconductor
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N-channel enhancement MOSFET in SOT-23 package with 60 V drain-source voltage, 200 mA continuous drain current, and low on-resistance of 2.8 ohms at 10 V gate-source voltage. |
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2N7002（丝印12W）
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Shikues Semiconductor
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Surface-mounted, low threshold voltage, ESD >2KV, BV 60V, Ptot 0.83W, ID 0.43A, RDS(ON) 3Ω@10V, 4Ω@4.5V. |
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HSS2N7002K
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Huashuo Semiconductor
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N-channel 60V fast switching MOSFET in SOT-23 package with 1.3A pulsed drain current, 1 ohm typical RDS(on) at VGS=4.5V, suitable for low side load switches, DC-DC converters, and portable applications. |
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2N7002T-HAF
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JCET Group
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N-channel MOSFET in SOT-523 package with 60 V drain-source voltage, 115 mA drain current, 5 ohm typical on-resistance at 10 V gate-source voltage, and 150 mW power dissipation. |
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AD-2N7002KW
