N- AND P-CHANNEL 30-V D-S MOSFET Search Results

Contextual Info: SÌ6544DQ Vishay Siliconix N- and P-Channel 30-V D-S MOSFET Rd s <o n ] (&) I d (A) 0.035 @ VGS= 10 v ±4.0 V D* (V) N-Channel 30 0.050 @ VGS = 4.5 V ±3.4 0.045 @ VGS = -1 0 V ±3.5 0.090 @ V gs = -4 .5 V ±2.5 a t -30 P-Channel Dl Q S2 P TSSOP-8 Di Si

Contextual Info: Temic SÌ4532DY S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) N-Channel 30 P-Channel -30 rDS(on) (Q ) I d (A) 0.065 @ VGs = 10 V ±3.9 0.095 @ VGs = 4.5 V ±3.1 0.085 @ VGS = -10 V ±3.5 0.19 @ VGs = -4.5 V

Contextual Info: Temic SÌ4542DY S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) 30 N-Channel P-Channel -30 rDS(on) (Q ) I d (A) 0.025 @ VGS = 10 V ± 6.9 0.035 @ VGS = 4.5 V ±5.8 0.032 @ VGS = -10 V ±6.1 0.045 @ VGS = -4.5 V

25S16

Contextual Info: SÌ4542DY - SNicönix N- and P-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) N-Channel P-Channel r DS(ON) (-2) I d (A) 0.025 @ VGS = 10 V ± 6 .9 30 0.035 @ VGS = 4.5 V

Contextual Info: Temic SÌ6544DQ Semiconductors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) N-Channel 30 P-Channel -30 rDS(on) (Q ) I d (A) 0.035 @ VGs = 10 V ±4 .0 0.050 @ Vos = 4.5 V ±3 .4 0.045 @ V GS = -10 V ±3.5 0.090 @ VGs = -4-5 V ±2.5

25S16

Contextual Info: _ SÌ4542PY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET Vos (V) N-Channel P-Channel flfW O N) (ß) l D (A) 0 .025 VGs = 10 V ±6.9 0.035 @ VGS = 4,5 V ±5.8 0,032® VGS = -1 0 V ±6.1 0.045 @ VGS = -4 .5 V ±5.1 30 -30

Si4558DY

Contextual Info: SÌ4558DY Vishay Sîliconix N- and P-Channel 30-V D-S MOSFET P R O D U C T SU M M ARY V d sO n N-Channel P-Channel R o s (on ) iß ) Id W 0.04 0 VGS = 10 V ±6 0.060 @ V q s = 4 .5 V ±4.B 30 0.040 @ VGs = “ 10 V ±6 0.070 @ V q S = “ 4-5 V ±4.4 -30

Si6543DQ

Contextual Info: Temic SÌ6543DQ Se m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V u s (V ) N-Channel 30 P-Channel I d (A) r DS(on) ( ß ) 30 0.065 @ VGs = 10 V ±3.9 0.095 @ VGS = 4.5 V ±3.1 0.085 @ Vos = -10 V ±2.5 0.19 @ V(jS = -4.5 V

Contextual Info: SÌ4558DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY V d s (V ) N-Channel P-Channel r DS(on) (S3) I d (A) 0.040 Vq S = 10 V ±6 0.060 @ VGs = 4.5 V ±4.8 30 0.040 @ Vqs = -10 V ±6 0.070 @ VGS = -4.5 V ±4.4 -30 s2 o SO-8 ~8~| Ql Œ

Contextual Info: TEMIC SÌ4539DY Semiconductors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V DS(V) N-Channel 30 P-Channel 30 r DS(on)(^) I d (A) 0.037 @ VGs = 10 V 0.055 @ VGS = 4.5 V 0.053 @ Vgs - —10 V 0.095 @ VGS = -^.5 v ±5.8 ±4.7 ±4.9 ±3.6 Di

Contextual Info: TEMIC SÌ4558DY Semiconductors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel 30 P-Channel 30 I d (A) ±6 ±4.8 ±6 ±4.4 r DS(on)(^) 0.040 @ VGs = 10 V 0.060 @ VGs = 4.5 V 0.040 @ VGS = -10V 0.070 @ VGS = -4.5 V S2 o \JZ S O -8

S-49534

Abstract: Si4539DY
Contextual Info: Si4539DY Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel N Channel 30 P Channel P-Channel –30 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 D1 D1

Contextual Info: Si4539DY Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel N Channel 30 P Channel P-Channel –30 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 D1 D1

S-49534

Abstract: Si4539DY
Contextual Info: Si4539DY Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel N Channel 30 P Channel P-Channel –30 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 D1 D1

Si4542DY

Abstract: Si4542DY-T1
Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel −30 30 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 6.9 0.035 @ VGS = 4.5 V 5.8 0.032 @ VGS = −10 V −6.1 0.045 @ VGS = −4.5 V −5.1

S3125

Contextual Info: Si6544BDQ New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 FEATURES rDS(on) (W) ID (A) 0.032 @ VGS = 10 V 4.3 0.046 @ VGS = 4.5 V 3.7 0.043 @ VGS = - 10 V - 3.8 0.073 @ VGS = - 4.5 V

Si6544BDQ

Abstract: S-31251-Rev
Contextual Info: Si6544BDQ New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 FEATURES rDS(on) (W) ID (A) 0.032 @ VGS = 10 V 4.3 0.046 @ VGS = 4.5 V 3.7 0.043 @ VGS = - 10 V - 3.8 0.073 @ VGS = - 4.5 V

Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel −30 30 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 6.9 0.035 @ VGS = 4.5 V 5.8 0.032 @ VGS = −10 V −6.1 0.045 @ VGS = −4.5 V −5.1

Si6544BDQ

Contextual Info: Si6544BDQ New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 FEATURES rDS(on) (W) ID (A) 0.032 @ VGS = 10 V 4.3 0.046 @ VGS = 4.5 V 3.7 0.043 @ VGS = - 10 V - 3.8 0.073 @ VGS = - 4.5 V

83V2

Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel −30 30 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 6.9 0.035 @ VGS = 4.5 V 5.8 0.032 @ VGS = −10 V −6.1 0.045 @ VGS = −4.5 V −5.1

Si3552DV

Abstract: Si3552DV-T1
Contextual Info: Si3552DV Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V 2.5 0.175 @ VGS = 4.5 V 2.0 0.200 @ VGS = - 10 V - 1.8 0.360 @ VGS = - 4.5 V - 1.2 TSOP-6

Contextual Info: Temic SÌ6543DQ S e m i c o n d u c t o r s Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary V d s (V) N-Channel 30 P-Channel I d (A) r DS(on) ( ß ) 30 0.065 @ VGs = 10 V ±3.9 0.095 @ VGS = 4.5 V ±3.1 0.085 @ VGs = -1 0 V ±2.5 0.19 @ VGs = -4-5 V

Si3552DV

Abstract: Si3552DV-T1
Contextual Info: Si3552DV Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V 2.5 0.175 @ VGS = 4.5 V 2.0 0.200 @ VGS = - 10 V - 1.8 0.360 @ VGS = - 4.5 V - 1.2 TSOP-6

Contextual Info: Si4539ADY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.036 @ VGS = 10 V 5.9 0.053 @ VGS = 4.5 V 4.9 0.053 @ VGS = - 10 V - 4.9 0.090 @ VGS = - 4.5 V - 3.7 D1 S2 SO-8