N- AND P-CHANNEL 30-V D-S MOSFET Search Results
N- AND P-CHANNEL 30-V D-S MOSFET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P | |||
| DE6B3KJ101KA4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |||
| DE6B3KJ331KB4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |||
| DE6E3KJ102MN4A | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |||
| DE6E3KJ472MA4B | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive |
N- AND P-CHANNEL 30-V D-S MOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SÌ6544DQ Vishay Siliconix N- and P-Channel 30-V D-S MOSFET Rd s <o n ] (&) I d (A) 0.035 @ VGS= 10 v ±4.0 V D* (V) N-Channel 30 0.050 @ VGS = 4.5 V ±3.4 0.045 @ VGS = -1 0 V ±3.5 0.090 @ V gs = -4 .5 V ±2.5 a t -30 P-Channel Dl Q S2 P TSSOP-8 Di Si |
OCR Scan |
6544DQ 6544D S-56944-- 23-Nov-98 Si6544PQ S-56944--Rev. | |
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Contextual Info: Temic SÌ4532DY S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) N-Channel 30 P-Channel -30 rDS(on) (Q ) I d (A) 0.065 @ VGs = 10 V ±3.9 0.095 @ VGs = 4.5 V ±3.1 0.085 @ VGS = -10 V ±3.5 0.19 @ VGs = -4.5 V |
OCR Scan |
4532DY S-49520--Rev. 18-Dec-96 | |
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Contextual Info: Temic SÌ4542DY S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) 30 N-Channel P-Channel -30 rDS(on) (Q ) I d (A) 0.025 @ VGS = 10 V ± 6.9 0.035 @ VGS = 4.5 V ±5.8 0.032 @ VGS = -10 V ±6.1 0.045 @ VGS = -4.5 V |
OCR Scan |
4542DY S-54950--Rev. 29-Sep-97 S-54950-- | |
25S16Contextual Info: SÌ4542DY - SNicönix N- and P-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) N-Channel P-Channel r DS(ON) (-2) I d (A) 0.025 @ VGS = 10 V ± 6 .9 30 0.035 @ VGS = 4.5 V |
OCR Scan |
4542DY S-56944-- ov-98 25S16 | |
25S16Contextual Info: _ SÌ4542PY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET Vos (V) N-Channel P-Channel flfW O N) (ß) l D (A) 0 .025 VGs = 10 V ±6.9 0.035 @ VGS = 4,5 V ±5.8 0,032® VGS = -1 0 V ±6.1 0.045 @ VGS = -4 .5 V ±5.1 30 -30 |
OCR Scan |
4542PY 23-Nov-98 Si4542DY S-56944-- 25S16 | |
Si4558DYContextual Info: SÌ4558DY Vishay Sîliconix N- and P-Channel 30-V D-S MOSFET P R O D U C T SU M M ARY V d sO n N-Channel P-Channel R o s (on ) iß ) Id W 0.04 0 VGS = 10 V ±6 0.060 @ V q s = 4 .5 V ±4.B 30 0.040 @ VGs = “ 10 V ±6 0.070 @ V q S = “ 4-5 V ±4.4 -30 |
OCR Scan |
4558DY SI4558DY S-56944--Rev. 23-Nov-98 Si4558DY | |
Si6543DQContextual Info: Temic SÌ6543DQ Se m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V u s (V ) N-Channel 30 P-Channel I d (A) r DS(on) ( ß ) 30 0.065 @ VGs = 10 V ±3.9 0.095 @ VGS = 4.5 V ±3.1 0.085 @ Vos = -10 V ±2.5 0.19 @ V(jS = -4.5 V |
OCR Scan |
6543DQ 150aC S-49534-- 06-Oct-97 06-0ct Si6543DQ | |
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Contextual Info: SÌ4558DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY V d s (V ) N-Channel P-Channel r DS(on) (S3) I d (A) 0.040 Vq S = 10 V ±6 0.060 @ VGs = 4.5 V ±4.8 30 0.040 @ Vqs = -10 V ±6 0.070 @ VGS = -4.5 V ±4.4 -30 s2 o SO-8 ~8~| Ql Œ |
OCR Scan |
4558DY S-56944-- 23-Nov-9i 23-Nov-98 | |
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Contextual Info: TEMIC SÌ4539DY Semiconductors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V DS(V) N-Channel 30 P-Channel 30 r DS(on)(^) I d (A) 0.037 @ VGs = 10 V 0.055 @ VGS = 4.5 V 0.053 @ Vgs - —10 V 0.095 @ VGS = -^.5 v ±5.8 ±4.7 ±4.9 ±3.6 Di |
OCR Scan |
4539DY S-49534--Rev. 6-Oct-97 | |
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Contextual Info: TEMIC SÌ4558DY Semiconductors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel 30 P-Channel 30 I d (A) ±6 ±4.8 ±6 ±4.4 r DS(on)(^) 0.040 @ VGs = 10 V 0.060 @ VGs = 4.5 V 0.040 @ VGS = -10V 0.070 @ VGS = -4.5 V S2 o \JZ S O -8 |
OCR Scan |
4558DY S-49534--Rev. -Oct-97 06-Oct-97 | |
S-49534
Abstract: Si4539DY
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Si4539DY S-49534--Rev. 06-Oct-97 S-49534 | |
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Contextual Info: Si4539DY Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel N Channel 30 P Channel P-Channel –30 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 D1 D1 |
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Si4539DY 08-Apr-05 | |
S-49534
Abstract: Si4539DY
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Original |
Si4539DY 18-Jul-08 S-49534 | |
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Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel −30 30 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 6.9 0.035 @ VGS = 4.5 V 5.8 0.032 @ VGS = −10 V −6.1 0.045 @ VGS = −4.5 V −5.1 |
Original |
Si4542DY Si4542DY-T1 S-32125--Rev. 27-Oct-03 | |
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S3125Contextual Info: Si6544BDQ New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 FEATURES rDS(on) (W) ID (A) 0.032 @ VGS = 10 V 4.3 0.046 @ VGS = 4.5 V 3.7 0.043 @ VGS = - 10 V - 3.8 0.073 @ VGS = - 4.5 V |
Original |
Si6544BDQ Si6544BDQ-T1 S-31251--Rev. 16-Jun-03 S3125 | |
Si6544BDQ
Abstract: S-31251-Rev
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Original |
Si6544BDQ Si6544BDQ-T1 08-Apr-05 S-31251-Rev | |
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Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel −30 30 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 6.9 0.035 @ VGS = 4.5 V 5.8 0.032 @ VGS = −10 V −6.1 0.045 @ VGS = −4.5 V −5.1 |
Original |
Si4542DY Si4542DY-T1 18-Jul-08 | |
Si6544BDQContextual Info: Si6544BDQ New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 FEATURES rDS(on) (W) ID (A) 0.032 @ VGS = 10 V 4.3 0.046 @ VGS = 4.5 V 3.7 0.043 @ VGS = - 10 V - 3.8 0.073 @ VGS = - 4.5 V |
Original |
Si6544BDQ Si6544BDQ-T1 S-31251--Rev. 16-Jun-03 | |
83V2Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel −30 30 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 6.9 0.035 @ VGS = 4.5 V 5.8 0.032 @ VGS = −10 V −6.1 0.045 @ VGS = −4.5 V −5.1 |
Original |
Si4542DY Si4542DY-T1 08-Apr-05 83V2 | |
Si3552DV
Abstract: Si3552DV-T1
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Si3552DV Si3552DV-T1 18-Jul-08 | |
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Contextual Info: Temic SÌ6543DQ S e m i c o n d u c t o r s Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary V d s (V) N-Channel 30 P-Channel I d (A) r DS(on) ( ß ) 30 0.065 @ VGs = 10 V ±3.9 0.095 @ VGS = 4.5 V ±3.1 0.085 @ VGs = -1 0 V ±2.5 0.19 @ VGs = -4-5 V |
OCR Scan |
6543DQ S-47958--Rev. 15-Apr-96 TSSOP-8/-28 | |
Si3552DV
Abstract: Si3552DV-T1
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Si3552DV Si3552DV-T1 08-Apr-05 | |
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Contextual Info: Si4539ADY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.036 @ VGS = 10 V 5.9 0.053 @ VGS = 4.5 V 4.9 0.053 @ VGS = - 10 V - 4.9 0.090 @ VGS = - 4.5 V - 3.7 D1 S2 SO-8 |
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Si4539ADY Si4539ADY-T1 18-Jul-08 | |
Si4532ADY
Abstract: Si4532ADY-T1
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Si4532ADY Si4532ADY-T1 S-31989--Rev. 13-Oct-03 | |