N- AND P-CHANNEL 30-V D-S MOSFET Search Results

Contextual Info: SÌ6544DQ Vishay Siliconix N- and P-Channel 30-V D-S MOSFET Rd s <o n ] (&) I d (A) 0.035 @ VGS= 10 v ±4.0 V D* (V) N-Channel 30 0.050 @ VGS = 4.5 V ±3.4 0.045 @ VGS = -1 0 V ±3.5 0.090 @ V gs = -4 .5 V ±2.5 a t -30 P-Channel Dl Q S2 P TSSOP-8 Di Si

Contextual Info: Temic SÌ4542DY S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) 30 N-Channel P-Channel -30 rDS(on) (Q ) I d (A) 0.025 @ VGS = 10 V ± 6.9 0.035 @ VGS = 4.5 V ±5.8 0.032 @ VGS = -10 V ±6.1 0.045 @ VGS = -4.5 V

25S16

Contextual Info: _ SÌ4542PY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET Vos (V) N-Channel P-Channel flfW O N) (ß) l D (A) 0 .025 VGs = 10 V ±6.9 0.035 @ VGS = 4,5 V ±5.8 0,032® VGS = -1 0 V ±6.1 0.045 @ VGS = -4 .5 V ±5.1 30 -30

Contextual Info: TEMIC SÌ4539DY Semiconductors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V DS(V) N-Channel 30 P-Channel 30 r DS(on)(^) I d (A) 0.037 @ VGs = 10 V 0.055 @ VGS = 4.5 V 0.053 @ Vgs - —10 V 0.095 @ VGS = -^.5 v ±5.8 ±4.7 ±4.9 ±3.6 Di

Contextual Info: TEMIC SÌ4558DY Semiconductors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel 30 P-Channel 30 I d (A) ±6 ±4.8 ±6 ±4.4 r DS(on)(^) 0.040 @ VGs = 10 V 0.060 @ VGs = 4.5 V 0.040 @ VGS = -10V 0.070 @ VGS = -4.5 V S2 o \JZ S O -8

Contextual Info: SÌ4532DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) N-Channel P-Channel r DS(ON) I d (A) (-2) 0.065 @ VGS = 10 V ±3.9 0.095 @ VGS = 4.5 V ±3.1 30 0.085 @ VGS = —10 V ±3 .5 0.19 @ VGS = —4.5 V ±2 .5 -3 0 S2 Q Di

Si4544DY

Contextual Info: Si4544DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 –30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.5 0.050 @ VGS = 4.5 V "5.4 0.045 @ VGS = –10 V "5.7 0.090 @ VGS = –4.5 V "4.0 S2 SO-8 S1 1 8 D G1

SI4532CDY-T1-GE3

Abstract: Si4532CDY SI4532C
Contextual Info: Si4532CDY Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.047 at VGS = 10 V 6.0 0.065 at VGS = 4.5 V 5.2 VDS (V) N-Channel 30 P-Channel - 30 0.089 at VGS = - 10 V - 4.3 0.140 at VGS = - 4.5 V - 3.4 Qg (Typ.)

si5504

Abstract: Si5504BDC-T1-GE3 Si5504BDC Si5504BDC-T1-E3 TB-3050 SI5504BDC-T1
Contextual Info: Si5504BDC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8 Qg (Typ)

Contextual Info: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)

Contextual Info: Si6544BDQ Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.032 at VGS = 10 V 4.3 0.046 at VGS = 4.5 V 3.7 0.043 at VGS = - 10 V - 3.8 0.073 at VGS = - 4.5 V - 2.8 • Halogen-free

N-Channel mosfet sot-363

Contextual Info: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)

Si4544DY

Contextual Info: Si4544DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Si4558DY

Contextual Info: Si4558DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 –30 rDS(on) (W) ID (A) 0.040 @ VGS = 10 V "6 0.060 @ VGS = 4.5 V "4.8 0.040 @ VGS = –10 V "6 0.070 @ VGS = –4.5 V "4.4 S2 SO-8 G2 S1 1 8 D G1

Contextual Info: Tem ic SÌ9939DY Semiconductors Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel -30 I d (A) ±3.5 ±3 ±2.5 ±3.5 ±3 ±2.5 r DS(on) (£2) 0.05 @ VGS = 10 V 0.07 @ Vgs = 6 V 0.08 @ VGS = 4.5 V 0.10 @ v Gs = - i o v

Si4532DY

Contextual Info: Si4532DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel P-Channel ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 30 –30 RDS(ON) (W) D1 S2 SO-8 S1 1 8 D1

Si4542DY

Abstract: Si4542DY-T1-E3 Si4542DY-T1-GE3
Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 6.9 0.035 at VGS = 4.5 V 5.8 0.032 at VGS = - 10 V - 6.1 0.045 at VGS = - 4.5 V - 5.1 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 6.9 0.035 at VGS = 4.5 V 5.8 0.032 at VGS = - 10 V - 6.1 0.045 at VGS = - 4.5 V - 5.1 • Halogen-free According to IEC 61249-2-21

Contextual Info: _SÌ4532DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMM ARY V d» W N-Channef P-Channel Id W R d s (o n ) IQ> 0 .065 @ V G S = 10 V ± 3 .9 0 .095 @ V GS = 4 .5 V ± 3.1 0.085 O V GS = - 1 0 V ± 3 .5 0.19 @ V q s = - 4 5 V

SQ4532EY

Abstract: SQ4532
Contextual Info: SQ4532EY www.vishay.com Vishay Siliconix Automotive N-and P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY N-CHANNEL VDS (V) 30 - 30 RDS(on) () at VGS = ± 10 V 0.055 0.070 RDS(on) () at VGS = ± 4.5 V 0.100 0.190 5.6 - 5.3 ID (A) Configuration

SI7540DP

Contextual Info: Si7540DP New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel -12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = -4.5 V -8.9 0.053 @ VGS = -2.5 V -6.9 D TrenchFETr Power MOSFET

SI4544DY

Contextual Info: _SÌ4544DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET V d* W N-Channe! P-Channei R d s <o n ) •d W 0 .035 @ V G S= 10 V ± 6 .5 0.050 @ V Q S= 4.5 V ± 5 .4 0.045 @ V GS = - 1 0 V ± 5 .7 0 .090 @ V GS = - 4 . 5 V ± 4 .0

S-49534

Abstract: Si6552DQ
Contextual Info: Si6552DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 0.08 @ VGS = 4.5 V "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 20 P-Channel –12 D1 S2 TSSOP-8 8 D2

fds mosfet

Contextual Info: Tem ic SÌ6435DQ S em i co n d u c t or s P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V ) r DS(on) ( ^ ) I d (A ) 30 0.040 @ V o s = -1 0 V 0.070 @ V o s = -4 .5 V ± 4 .5 ± 3 .4 s*o TSSOP-8 °n Top View *Source Pins 2, 3, 6 and 7 must be tied common.