N MOSFET 80V 180A Search Results

AOB480L

Abstract: AOT480L Mj333
Contextual Info: AOT480L/AOB480L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT480L & AOB480L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This

Contextual Info: AOT480L/AOB480L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT480L & AOB480L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr. The result is outstanding efficiency with controlled switching behavior. This

Contextual Info: AOT480L/AOB480L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT480L & AOB480L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr. The result is outstanding efficiency with controlled switching behavior. This

Contextual Info: AOW480 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOW480 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is

aot480l

Abstract: DM 7820
Contextual Info: AOT480L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT480L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is

Contextual Info: AOT480L/AOB480L 80V N-Channel MOSFET TM SDMOS General Description Product Summary TM The AOT480L & AOB480L is fabricated with SDMOS trench technology that combines excellent RDS ON with low gate charge & low Qrr. The result is outstanding efficiency with controlled switching behavior. This universal

Contextual Info: SSFP42N10 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 100V Simple Drive Requirement ID25 = 42A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

isotop mosfet 180A 100V

Abstract: STE180NE10
Contextual Info: STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ VDSS RDS on ID 100 V < 6 mΩ 180A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD

Ultrasonic welding circuit diagram

Abstract: schematic diagram UPS Ultrasonic welding circuit STE180NE10 isotop mosfet 100V SWITCHING WELDING SCHEMATIC BY MOSFET
Contextual Info: STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ VDSS R DS on ID 100 V < 6 mΩ 180A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD

IRL540N equivalent

Abstract: IRL540N
Contextual Info: PD -95454 IRLI540NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V

Infineon technology roadmap for mosfet

Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
Contextual Info: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial

ISL8240

Abstract: ISL6840 ISL21060
Contextual Info: P WERING INFRASTRUCTURE Telecom/Datacom, Wired Networks and Data Storage P WERING INFRASTRUCTURE The increased amount of data and video all of which can be configured using Intersil’s being transmitted via the cloud has placed PowerNavigator — the industry’s most

IRL540N

Contextual Info: PD -95454 IRLI540NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V

Contextual Info: PD - 91503D IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier

IRFP150N

Abstract: IRF1310N TO-247AC Package Mosfet IRFP150N 4.5v to 100v input regulator
Contextual Info: PD - 91503D IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD -95454 IRLI540NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V

N mosfet 250v 600A

Contextual Info: Ihr Spezialist für Mess- und Prüfgeräte Programmable DC Electronic Load MODEL 63200 SERIES Key Features • Power Rating : 2600W, 5200W, 6500W, 10000W, 10400W, 14500W, 15600W ■ Voltage range : 0 ~ 80V/0 ~ 600V/0 ~ 1000V ■ Current range : Up to 1000A

IRFP150N

Abstract: IRFP150N International Rectifier IRF1310N 4.5v to 100v input regulator Mosfet IRFP150N 91503D
Contextual Info: PD - 91503D IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier

IRF1310N

Abstract: IRF1310n equivalent 4.5V to 100V input regulator
Contextual Info: PD - 94873 IRFI1310NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.036Ω G Description Fifth Generation HEXFETs from International Rectifier

IRFI1310N

Abstract: irfi1310 IRF1310N 4.5v to 100v input regulator
Contextual Info: PD - 9.1611A IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V RDS on = 0.036Ω G Fifth Generation HEXFETs from International Rectifier

IRF1310N

Abstract: IRFP150N IRFP150N International Rectifier 4.5v to 100v input regulator
Contextual Info: PD - 9.1503B IRFP150N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036Ω G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier

IRF1310N

Abstract: IRFI1310N 4.5v to 100v input regulator
Contextual Info: PD - 9.1611A IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V RDS on = 0.036Ω G Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 94873 IRFI1310NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.036Ω G Description Fifth Generation HEXFETs from International Rectifier

IRF1310N

Abstract: 4.5V to 100V input regulator
Contextual Info: PD - 94873 IRFI1310NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.036Ω G Description Fifth Generation HEXFETs from International Rectifier