N MOSFET 80V 180A Search Results

AOB480L

Abstract: AOT480L Mj333
Contextual Info: AOT480L/AOB480L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT480L & AOB480L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This

aot480l

Abstract: DM 7820
Contextual Info: AOT480L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT480L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is

isotop mosfet 180A 100V

Abstract: STE180NE10
Contextual Info: STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ VDSS RDS on ID 100 V < 6 mΩ 180A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD

Infineon technology roadmap for mosfet

Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
Contextual Info: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial

ISL8240

Abstract: ISL6840 ISL21060
Contextual Info: P WERING INFRASTRUCTURE Telecom/Datacom, Wired Networks and Data Storage P WERING INFRASTRUCTURE The increased amount of data and video all of which can be configured using Intersil’s being transmitted via the cloud has placed PowerNavigator — the industry’s most

IRL540N

Contextual Info: PD -95454 IRLI540NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V

IRFP150N

Abstract: IRF1310N TO-247AC Package Mosfet IRFP150N 4.5v to 100v input regulator
Contextual Info: PD - 91503D IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier

IRFP150N

Abstract: IRFP150N International Rectifier IRF1310N 4.5v to 100v input regulator Mosfet IRFP150N 91503D
Contextual Info: PD - 91503D IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier

IRF1310N

Abstract: IRF1310n equivalent 4.5V to 100V input regulator
Contextual Info: PD - 94873 IRFI1310NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.036Ω G Description Fifth Generation HEXFETs from International Rectifier

IRFI1310N

Abstract: irfi1310 IRF1310N 4.5v to 100v input regulator
Contextual Info: PD - 9.1611A IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V RDS on = 0.036Ω G Fifth Generation HEXFETs from International Rectifier

IRFP150N

Abstract: IRFP150N International Rectifier IRF1310N 4.5v to 100v input regulator
Contextual Info: PD- 91503C IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier

IRF1310N

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 91504A IRF1310N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036Ω G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD 9.1651 B International IQ R Rectifier F B 1 8 0 S A 10 HEXFET Power MOSFET • • • • • • • • Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance

FI840

Abstract: IRL540N IRLI540N
Contextual Info: PD - 9.1497A IRLI540N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V

IRF1310N

Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 91504A IRF1310N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036Ω G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier

IRFI1310N

Abstract: IRF1310N 4.5V TO 100V INPUT REGULATOR
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1373 IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D

IRF1310N

Abstract: IRF1310NL AN-994 IRF1310NS
Contextual Info: PD - 91514B IRF1310NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1310NS Low-profile through-hole (IRF1310NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS =100V RDS(on) = 0.036Ω G ID = 42A

N mosfet 80v 180A

Abstract: fb180sa10
Contextual Info: PD 9.1651 B International Iö R Rectifier F B 1 8 0 S A 10 HEXFET Power MOSFET Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance

IRFP150N

Abstract: IRF1310N AM 22A irf 9246 IRF 450 MOSFET 4.5V TO 100V INPUT REGULATOR
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1503 IRFP150N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036Ω G

DC MOTOR CONTROL THROUGH PWM USING IC 555 48v 1a

Abstract: ISL6730 IRS 4 Channel Integrated Class D Audio Driver IC with PWM Modulator R/MOSFET IRS 630 Datasheet ISL21060
Contextual Info: P WERING INDUSTRIAL General-Purpose Factory Automation, Test and Measurement Systems, Building & Home, Energy Generation, Medical Devices and Programmable Logic Controllers P WERING INDUSTRIAL With industry-leading technology in power data acquisition processes utilize sensors and

FB180SA10

Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD- 91651C FB180SA10 HEXFET Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 100V

AN-994

Abstract: IRF540NL IRL540N IRL540NL IRL540NS
Contextual Info: PD -91535 IRL540NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL540NS l Low-profile through-hole (IRL540NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS = 100V RDS(on) = 0.044Ω G

IRF1310NL

Abstract: AN-994 IRF1310N IRF1310NS 4.5v to 100v input regulator
Contextual Info: PD - 91514B IRF1310NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1310NS Low-profile through-hole (IRF1310NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS =100V RDS(on) = 0.036Ω G ID = 42A

BU 508 AF mosfet

Abstract: AN-994 IRF1310N IRF1310NS IRF530S 4.5V TO 100V INPUT REGULATOR
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1514A IRF1310NS PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D l VDSS = 100V