N MOS 80MA Search Results

7149 p

Abstract: SN54M5 54145
Contextual Info: TTL MSI TYPES SN54M5, SN54LSH5. SN74145, SN74LS145 BCD-TO-DECIMAL DECODERS/DRIVERS B U L L E T I N N O . D L -S 7 6 J 1 8 1 S . M A R C H Î 9 7 4 - H E V IS E D O C T O B E R 1 9 7 6 FOR USE AS LAMP, RELAY, OR MOS DRIVERS S N 54145, S N 54LS145 . . . J O R W PAC KAG E

SSM6L36TU

Contextual Info: SSM6L36TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36TU Unit: mm ○ High-Speed Switching Applications 2.1±0.1 Ron = 1.14Ω max (@VGS = 1.8 V) Ron = 0.85Ω (max) (@VGS = 2.5 V) Ron = 0.66Ω (max) (@VGS = 4.5 V) 1 6 2 5 3 4 0.7±0.05

SSM6L36FE

Contextual Info: SSM6L36FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36FE ○ High-Speed Switching Applications • Low ON-resistance Q1 Nch: Ron = 1.52Ω max (@VGS = 1.5 V) Ron = 1.14Ω (max) (@VGS = 1.8 V) Ron = 0.85Ω (max) (@VGS = 2.5 V) Ron = 0.66Ω (max) (@VGS = 4.5 V)

Contextual Info: SSM6L36TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36TU Unit: mm ○ High-Speed Switching Applications 2.1±0.1 Ron = 1.14Ω max (@VGS = 1.8 V) Ron = 0.85Ω (max) (@VGS = 2.5 V) Ron = 0.66Ω (max) (@VGS = 4.5 V) 1 6 2 5 3 4 0.7±0.05

A1252

Contextual Info: SILICON N CHANNEL MOS TYPE GT80J101 Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2 0 5M AX- • High Input Impedance • High Speed tf=0.40¿/s Max. • Low Saturation Voltage v CE(sat) = 3-5V (Max.) • Enhancement-Mode 0 3 .3 ± O .2 M A X IM U M RATINGS (Ta = 25°C)

THMS1616202-25

Abstract: c0ee
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THMS1616202-25,-35 ¡DESCRIPTIONS The T H M S 1 6 1 620Z is a 16,384 words by 16 bits static RAM modu l e c o n s t r u c t e d on a double sided PC board using four TC55417J 16Kx4 static RAMs in SOJ packages. The T H M S 1 6 1 6 2 0 Z is o ffered in a 40 pin 500 mil zip m o dule suitable for

MC3459

Abstract: KF CAPACITOR
Contextual Info: .B . u I Input 1A Input 2A output A I vc~ Input ID Input 2D I Input lB output D Input Input Ic 2B Input output 2C B output Gnd c I 1 P SUFFIX PLASTIC CASE TYPICAL PACKAGE 646 OPERATION Input 2.5 V/div 2,5 V/div Utput Vcc TA MDTL and MTTL are Trademarks of

Contextual Info: OSC7050 Series Features ．Reflow Solder is possible ．Built-in C‐MOS IC wit Tri‐State Function ．TTL/HCMOS ．RoHS Compliant / Pb Free Specifications Holder Type Frequency Operating Temperature Range Storage Temperature Range Frequency

SSM6L36FE

Contextual Info: SSM6L36FE 東芝電界効果トランジスタ シリコンN・PチャネルMOS形 SSM6L36FE ○ 高速スイッチング 単位: mm 1.6±0.05 • 1.5 V 駆動です • オン抵抗が低い Q1 Nch: Ron = 1.52 Ω 最大 (@VGS = 1.5 V) 1.2±0.05 : Ron = 0.66 Ω (最大) (@VGS = 4.5 V)

NE582N

Abstract: 75494 NE582
Contextual Info: NE582-N PIN CONFIGURATION DESCRIPTION The NE582 is a general interface device comprising a high current output transistor and drive circu itry in each of 6 elements. Each output transistor is individually capa­ ble o f sinking 400mA with a typical satura­

Contextual Info: STLC3075 INTEGRATED POTS INTERFACE FOR HOME ACCESS GATEWAY AND WLL 1 • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ FEATURES Figure 1. Package MONOCHIP SLIC OPTIMISED FOR WLL & VoIP APPLICATIONS IMPLEMENT ALL KEY FEATURES OF THE BORSHT FUNCTION

74ls145m

Contextual Info: TYPES SN54145, SN54LS145, SN74145, SN74LS145 BCD-TO-DECIMAL DECODERS/DRIVERS M ARCH 1974—R E V IS E D D EC EM BER 1983 FO R U S E A S LAM P, R E L A Y , O R MOS D R IV E R S Full Decoding of Input Logic SN54145, SN74145, and SN74LS145 Have 80-mA Sink-Current Capability

CIRCUIT BREAKER AEG me 800

Abstract: catalog for 3RT series contactor* siemens Weidmuller upac Telemecanique catalog 9101900000 Siemens 4-20mA Loop Isolator catalog for 3RT Power contactor* siemens upac MCB 10 AMP 87426
Contextual Info: CATALOGUE 10 2006/2007 Short Form Catalogue Quick Reference Guide Company profile Weidmüller is the leading manufacturer of components for electrical and electronic interconnection technologies. The company develops, produces and sells customer-oriented solutions comprising the entire Weidmüller product portfolio.

DIODE SJ 98

Abstract: CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS T H M S 16 1620Z-25,-35 ¡DESCRIPTION The T H M S 1 6 1 6 2 0 Z is a 16,384 words by 16 bits static RAM module constr u c t e d on a double sided PC board using four TC55417J 16KX4 static RAMs in SOJ packages. The T H M S 1 6 1 6 2 0 Z is o ffered in a 40 pin 500 mil zip m o dule suitable for

TC227

Abstract: IR sensor LFN 2N700Z S14800 U53D LS 2027 audio amp a-b osai em 231 rtd aa2c SOT23-5 LM2729
Contextual Info: Model: R15B R:0 Intel Banias+855PM+ICH4 PCB STACK UP LAY1 TOP LAY2 GND LAY3 IN1 LAY4 IN2 LAYS GND1 LAY6 VCC LAY7 IN3 LAY8 IN4 LAY9 GND2 LAY10 BOTTOM Revision History A Page Page Page Page Page Page Page Page Page Page Page ORIGINAL RELEASE 1 2 3 4 5 6 7 8

IRF9120

Abstract: STLC3055N E-STLC3055N CFL DC 12V TQFP44 tip off 0401 transistor circuit tip off 0401
Contextual Info: STLC3055N WLL & ISDN-TA SUBSCRIBER LINE INTERFACE CIRCUIT 1 • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ FEATURES Figure 1. Package MONOCHIP SLIC OPTIMISED FOR WLL & VoIP APPLICATIONS IMPLEMENT ALL KEY FEATURES OF THE BORSHT FUNCTION

74ls145

Contextual Info: GD54/74LS145 BCD-TO-DECIMAL DECODER/DRIVER Features Pin Configuration • Full Decoding of Input Logic • 80-mA Sink-Current Capability • All Outputs Are Off for Invalid BCD Input Con­ ditions • Low Power Dissipation of ’LS145.35 mW Typical INPUTS

thermo couple t

Abstract: MT29TZZZ8D5JKEZB-107 W ES.95Q LED OPF AQY221N2S AQY221N2SX AQY221N2SZ 60N60 3v LED 50ma
Contextual Info: *3>2 WO M liAA ISOQ 4 . 3 1 0.2 ^ .löSt.OOS' x; * ^ 4 . 4 1 0.2 a“ SH“ PhotoMOS RELAYS RF Radio Frequency C (by) x R 1 0 Type 1 r / T 2.110.2 1- Q83±.008 m m inch FEATURES TYPICAL APPLICATIONS 1. In addition to lower output capaci­ tance between terminals than ever

55416P-20H

Abstract: 1S1212 TC55416P-15H
Contextual Info: 16,384 W O R D x 4 BIT C M O S STATIC R A M D E S C R IP T IO N T he T C 5 5 4 1 6 P -H is a 65,536 b it high speed static random access m em ory organized as 16,384 words by 4 b its u sing CMOS technology, and operated from a single 5 - v o l t supply. Toshiba's high

Contextual Info: UL CSA AQY221N2S pending RF Radio Frequency C (by) x R 10 Type 4.4±0.2 .173±.008 2.1±0.2 .083±.008 4.3±0.2 .169±.008 mm inch 1 4 2 3 pending PhotoMOS RELAYS FEATURES TYPICAL APPLICATIONS 1. In addition to lower output capacitance between terminals than ever

UD1001

Abstract: FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

Contextual Info: TC55417P/J —15H. TC55417P/J-20H TC55417P/J—25H. TC55417P/J-35H • * 16,384 W O R D x 4 BIT CMOS STATIC RAM DESCRIPTION The TC55417P/J—H is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5 - volt supply.

AQY221

Abstract: 221n3
Contextual Info: Ultra minimum package size, SSOP 1 Form A 4-pin type. Lower output capacitance and on resistance. (C✕R5) 4.45 .175 1.80 .071 2.65 .104 mm inch 1 4 2 3 UL CSA pending pending RF PhotoMOS (AQY221N3V) FEATURES TYPICAL APPLICATIONS 1. Reduced package size