N CHANNEL POWER MOS FET SOT Search Results

XP161A01A8PR

Contextual Info: XP161A01A8PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.18Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A01A8PR is a N-Channel Power MOS FET with low on-state

XP151A03A7MR

Contextual Info: XP151A03A7MR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.17Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-23 Package • Applications ■ General Description ■ Features The XP151A03A7MR is a N-Channel Power MOS FET with low on-state

XP161A0390PR

Contextual Info: XP161A0390PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.09Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A0390PR is a N-Channel Power MOS FET with low on-state

NE5500434

Abstract: nec RF package SOT89 nec 2501
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500434 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate lateral MOS

XP161A11A1PR

Abstract: sot 89 MOS FET
Contextual Info: XP161A11A1PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.105Ω MAX ◆ Gate Protect Diode Built-in ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A11A1PR is a N-Channel Power MOS FET with low on-state

NE5500234

Abstract: nec RF package SOT89 nec 2501 marking v2 FRS transceiver NE5500234-T1-AZ
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500234 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS DESCRIPTION The NE5500234 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for DCS1800 and PCS1900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate

S-90N0113SMA-TF

Abstract: S-90N0133SUA S-90N0133SUA-TF S-90N0212SMA-TF S-90N0232SUA-TF S-90N0312SMA-TF S-90N0332SUA-TF S-90N0442SUA-TF FET marking code seiko lot code
Contextual Info: Rev.3.0_00 N-CHANNEL POWER MOS FET FOR SWITCHING S-90N0133SUA The S-90N0133SUA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90N0332SUA

Abstract: 90n03 90N02 13003 TRANSISTOR equivalent FET SOT-89 N-Channel S-90N0113SMA-TF S-90N0133SUA-TF S-90N0212SMA-TF S-90N0232SUA-TF S-90N0312SMA-TF
Contextual Info: Rev.3.0_00 N-CHANNEL POWER MOS FET FOR SWITCHING S-90N0332SUA OD UC T The S-90N0332SUA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90N0513SPN

Abstract: 90N02 2 A mos fet FET SOT-89 N-Channel MARKING CODE 51 5 fet sot-89 S-90N0113SMA-TF S-90N0133SUA-TF S-90N0212SMA-TF S-90N0232SUA-TF S-90N0312SMA-TF
Contextual Info: Rev.3.0_00 N-CHANNEL POWER MOS FET FOR SWITCHING S-90N0513SPN OD UC T The S-90N0513SPN is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90N0232SUA

Abstract: 90N02 FET SOT-89 N-Channel FET MARKING CODE FET SOT-89 fet sot-89 marking code S-90N0113SMA-TF S-90N0133SUA-TF S-90N0212SMA-TF S-90N0232SUA-TF
Contextual Info: Rev.3.0_00 N-CHANNEL POWER MOS FET FOR SWITCHING S-90N0232SUA OD UC T The S-90N0232SUA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90N0133SUA

Abstract: FET SOT-89 fet sot-89 marking code FET SOT-89 N-Channel S-90N0113SMA-TF S-90N0133SUA-TF S-90N0212SMA-TF S-90N0232SUA-TF S-90N0312SMA-TF S-90N0332SUA-TF
Contextual Info: Rev.3.0_00 N-CHANNEL POWER MOS FET FOR SWITCHING S-90N0133SUA OD UC T The S-90N0133SUA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90N0312SMA

Abstract: FET MARKING CODE FET SOT-89 N-Channel S-90N0113SMA-TF S-90N0133SUA-TF S-90N0212SMA-TF S-90N0232SUA-TF S-90N0312SMA-TF S-90N0332SUA-TF S-90N0442SUA-TF
Contextual Info: Rev.3.0_00 N-CHANNEL POWER MOS FET FOR SWITCHING S-90N0312SMA OD UC T The S-90N0312SMA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90N0113SMA

Abstract: FET SOT-89 N-Channel S-90N0113SMA-TF S-90N0133SUA-TF S-90N0212SMA-TF S-90N0232SUA-TF S-90N0312SMA-TF S-90N0332SUA-TF S-90N0442SUA-TF
Contextual Info: Rev.3.0_00 N-CHANNEL POWER MOS FET FOR SWITCHING S-90N0113SMA OD UC T The S-90N0113SMA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90N0212SMA

Abstract: 90N02 S-90N0113SMA-TF S-90N0133SUA-TF S-90N0212SMA-TF S-90N0232SUA-TF S-90N0312SMA-TF S-90N0332SUA-TF S-90N0442SUA-TF FET MARKING CODE
Contextual Info: Rev.3.0_00 N-CHANNEL POWER MOS FET FOR SWITCHING S-90N0212SMA OD UC T The S-90N0212SMA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

XP151A11B0MR

Contextual Info: XP151A11B0MR ◆ ◆ ◆ ◆ ◆ ◆ Power MOS FET N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.17Ω max Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package • General Description ■ ● ● ● ● Applications

XP151A13A0MR

Contextual Info: XP151A13A0MR ◆ ◆ ◆ ◆ ◆ ◆ N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.1Ω max Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package • General Description Power MOS FET ■ ● ● ● ● Applications

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT4N10 Power MOSFET 3.5A, 100V N-CHANNEL TRENCHMOS LOGIC LEVEL FET „ DESCRIPTION The UTC UTT4N10 is an N-Channel Trench MOS Logic Level FET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance and low gate charge.

2SJ175 equivalent

Abstract: 2SJ172 2SJ175 2SK1093 2SK970 AM11 2SK109
Contextual Info: HITACHI 4AM11 SILICON N-CHANNEL/P-CHANNEL PO W E R MOS FET ARRAY HIGH SPEED POWER SWITCHING • FEA TU RES • Low Qn-Resistance N-channel; RDS Ion ^ 0.17 £?, V GS — 10 V. I0 - 2.5 A P-channel Ros o n )£ 0 .2 Q . VGS - -10 V, lD - -2.5 A Capable of 4 V Gate Drive

2N7002S

Abstract: sot-363 Marking G1 sot-363 marking DS
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002S SURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.250 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FEATURE SC-88/SOT-363 * Small surface mounting type. SC-88/SOT-363

RT 083

Contextual Info: TELEDYNE EÖE D COMPONENTS • ä^l7t.üa 0UUb3äi E _ m - T"3 S-£ST SD217, SD219 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FET ORDERING INFORMATION TO-206AF TO-72 Package SD219DE SD219DE/R SD219CHP 6.0 ohm, 25V V s b = 20V rnln

Contextual Info: TELEDYNE C OM P ON E N T S £öe m D s ö c} i 7 f c i 0 5 m SD220, SD221 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FET O R D E R IN G IN F O R M A T IO N SD220CHP Sorted Chips, in Waffle Pack . SD220HD Description 60 V, 9.0 ohm A B S O L U T E M A X IM U M R A T IN G S Tc

16116FP

Abstract: 16121FP HA16116 ha1745
Contextual Info: H A 1 6 1 1 6 F P / H A 1 6 1 2 1 FP S wi t c h i n g R e gu l a t o r for C h o p p e r Type D C / D C C o n v e r t e r Description Functions H A 16116FP and H A 16121FP are dual-channel PWM switching regulator controller ICs for use in chopper-type DC/DC converters.

toshiba fet

Contextual Info: Features and Structure POWER MOS FET Power MOS FET 1 Outstanding switching and frequency characteristics without carrier storage effect. (2) Ragged without current concentration. (3) Low driving power due to voltage-controlling device. (4) Easy parallel connections.

S-90P0112SMA

Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set