N CHANNEL MOSFET 45 W 10 V Search Results

CRCW08052201FKEA

Abstract: CRCW080510R0FKE MRF21010-1 MRF21010
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,

72632

Abstract: SUM55N03-16P
Contextual Info: SUM55N03-16P Vishay Siliconix New Product N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 55 0.024 @ VGS = 4.5 V 45 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized 100% Rg Tested

SUM55N03-16P

Contextual Info: SUM55N03-16P Vishay Siliconix New Product N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 55 0.024 @ VGS = 4.5 V 45 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized 100% Rg Tested

SUM55N03-16P

Contextual Info: SUM55N03-16P Vishay Siliconix New Product N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 55 0.024 @ VGS = 4.5 V 45 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized 100% Rg Tested

SUM45N25-58-E3

Abstract: SUM45N25-58 sum45n25
Contextual Info: SUM45N25-58 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) ID (A) 0.058 @ VGS = 10 V 45 0.062 @ VGS = 6 V

s3-1515

Abstract: SUM45N25-58
Contextual Info: SUM45N25-58 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) ID (A) 0.058 @ VGS = 10 V 45 0.062 @ VGS = 6 V

Contextual Info: VFT30-28 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT30-28 is Designed for General Purpose Class AB Power Amplifier Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B FEATURES: .112 x 45° A S • PG = 14 dB Typ. at 30 W /175MHz • 10:1 Load VSWR Capability

SUB45N05-20L

Abstract: SUP45N05-20L
Contextual Info: SUP/SUB45N05-20L Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 50 " a "45 0.020 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB45N05-20L

SUB45N05-20L

Abstract: SUP45N05-20L
Contextual Info: SUP/SUB45N05-20L New Product Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 50 "45 a 0.020 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S

Contextual Info: SUP/SUB45N05-20L New Product Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 50 "45 a 0.020 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S

IAf630

Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p

SUB45N05-20L

Abstract: SUP45N05-20L
Contextual Info: SUP/SUB45N05-20L Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 50 " a "45 0.020 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB45N05-20L

SUB45N05-20L

Abstract: SUP45N05-20L
Contextual Info: SUP/SUB45N05-20L Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 50 " a "45 0.020 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB45N05-20L

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50UMH-03 HIGH-SPEED SWITCHING USE FS50UMH-03 # • 2.5V DRIVE • V d s s . 3 0 V • TDS ON (MAX) . 2 2 m ii

21045F

Contextual Info: Preliminary Data Sheet May 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,

AGR26045EF

Abstract: J500 JESD22-C101A
Contextual Info: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,

710323

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10SMJ-06 HIGH-SPEED SWITCHING USE FS1OSMJ-06 • 4V DRIVE • VDSS .60V • ros ON (M AX) . 70mQ

21045F

Abstract: AGR26045EF J500 JESD22-C101A c.d.m. technology acp transistor EP 430 TRANSISTOR MOSFET 2645
Contextual Info: AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,

Contextual Info: Preliminary Data Sheet August 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

Contextual Info: FM600TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 300 Amperes/100 Volts A D F G G H K Q L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED

Contextual Info: FM600TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 300 Amperes/100 Volts A D F G G Q H K N X (11 PLACES) L L M P AB Z AB AC N P R AD 7 B E AE J 1 13 14 W T S B A AF U TC MEASURED

FM15TF-9

Abstract: JRC 062 gun diode bias symbol JRC FF 30
Contextual Info: MITSUBISHI MOSFET MODULE { F M 1 5 T F -9 , - 1 0 MEDIUM POWER SWITCHING USE INSULATED TYPE Dimensions in mm OUTUNE DRAWING 90 6 116 1 1 6 13 FM15TF-9, -10 GuN S jh 1G vN SvN G w N Sw N _ _64_ ^ ' 76 Tab # 250. t = 0.8 T ab # 110, t - 0.5 B h • Id . 15A

Contextual Info: MITSUBISHI Pch POWER MOSFET FX30UMJ-2 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX30UMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 1.3 © © o • 4 V D R IV E •V dss o - .-1 0 0 V I

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5VS-16A HIGH-SPEED SWITCHING USE FS5VS-16A OUTLINE DRAWING Dimensions in mm • V dss . 800V • rDS ON (MAX) . 2.3Q