N CHANNEL IGBT Search Results

Contextual Info: ITS40C06 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4740 - 2.1 The ITS40C06 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r

ITS25C12

Contextual Info: ITS25C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4741 - 2.1 The ITS25C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r

Contextual Info: ITS23C06 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4739-2.1 The ITS23C06 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r

DS4752

Contextual Info: ITS08C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Novem ber 1997 version, DS4752 - 2.1 The ITS08C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r

T0-264

Abstract: ITS35C12T
Contextual Info: ITS35C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4754 - 2.1 The ITS35C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r

Contextual Info: ITS08C12 M ITEL S E M IC O N D U C T O R Powerline N-Channel IGBTW ith Ultrafast Diode Advance Information S upersedes N ovem ber 1997 version, DS4752 - 2.1 The ITS08C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

AN450

Abstract: AN4502 AN4503 AN4505 GP800FSS12
Contextual Info: GP800FSS12 GP800FSS12 Powerline N-Channel Single Switch IGBT Module Preliminary Information Replaces October 1999 version, DS5239-2.0 DS5239-3.0 January 2000 The GP800FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N35CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ISL9V3040D3S Preliminary Insulated Gate Bipolar Transistor 300mJ, 400V, N-CHANNEL IGNITION IGBT  DESCRIPTION The UTC ISL9V3040D3S is an N-channel ignition Insulated Gate Bipolar Transistor. It uses UTC’s advanced technology to

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ISL9V3040D3S Preliminary Insulated Gate Bipolar Transistor 300mJ, 400V, N-CHANNEL IGNITION IGBT  DESCRIPTION The UTC ISL9V3040D3S is an N-channel ignition Insulated Gate Bipolar Transistor. It uses UTC’s advanced technology to

Contextual Info: GP1600FSS12-ABC GP1600FSS12-ABC Powerline N-Channel IGBT Module Advance Information DS5173-1.2 May 1999 The GP1200FSS12-ABC is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power

Contextual Info: GP1600FSS18-AAB GP1600FSS18-AAB Powerline N-Channel IGBT Module Advance Information DS5176-1.1 May 1999 The GP1600FSS18-AAB is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power

Contextual Info: IT S 1 5 C 1 2 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4753 - 2.1 The ITS15C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r

Contextual Info: M ITEL S E M IC O N D U C T O R GP400LSS12S Powerline N-Channel IGBT Module Supersedes July 1998 version, DS4137 - 7.3 DS4137 - 7.4 Decem ber 1998 The G P 400LS S 12S is a single sw itch 1200 volt, robust n channel e n h a n ce m e n t m ode insulated gate b ip ola r

AN4502

Abstract: AN4503 AN4505 AN4506 GP2400ESM12 S2400A MAX4800A
Contextual Info: GP2400ESM12 GP2400ESM12 Powerline N-Channel Single Switch IGBT Module Preliminary Information DS5360-1.1 May 2000 The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the

Contextual Info: JULY 1996 ITC14415006D PRELIMINARY DATA DS4393-2.6 ITC14415006D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS 25˚C VCES 600V IC(CONT) 150A VCE(sat) 2.3V • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed.

bipolar transistor td tr ts tf

Contextual Info: GP800DDS18-AAB GP800DDS18-AAB Powerline N-Channel IGBT Module Advance Information DS5165-1.0 May 1999 The GP800DDS18-AAB is a dual switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the

pspice high frequency igbt

Abstract: DS4926
Contextual Info: MITEL ITS03F03 Medium Frequency Powerline N-Channel IGBT SEM ICON D UCTOR Supersedes April 1998, version DS4926 - 1.1 DS4926 - 2.2 February 1999 Key Parameters The ITS03F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

Contextual Info: JULY 1996 IT14410012D PRELIMINARY DATA DS4372-2.6 ITC14410012D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS 25˚C VCES 1200V IC(CONT) 100A VCE(sat) 2.8V • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed.

DS4751

Abstract: ITS60C06
Contextual Info: ITS60C06 ITS60C06 Medium Frequency Powerline N-Channel IGBT With Ultrafast Diode DS4751 - 2.0 May 1999 The ITS60C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

AN4502

Abstract: AN4503 GP401LSS18 DSA0018823 ups sine wave inverter circuit diagram
Contextual Info: GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the

IGBT Pspice

Abstract: sc 1091
Contextual Info: MITEL ITS30F03 Medium Frequency Powerline N-Channel IGBT SEM ICON D UCTOR Supersedes April 1998, version DS4925-1.2 DS4925-2.2 February 1999 Key Parameters The ITS30F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

Contextual Info: JULY 1996 ITC14407516D PRELIMINARY DATA DS4580-1.4 ITC14407516D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS 25˚C VCES 1600V IC(CONT) 75A VCE(sat) 3.3V • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed.

T 600 D

Abstract: ITS40F06 ITS40F06P T0247 PSPICE Orcad ITS40
Contextual Info: MITEL ITS40F06 Medium Frequency Powerline N-Channel IGBT SEM ICON D UCTOR Supersedes February 1998, version DS4682-3.4 DS4682-4.2 March 1999 Key Parameters The ITS40F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for