N 431 TRANSISTOR Search Results

DIODE 433

Abstract: tl 431 R 433 A F433 IRFF430 IRFF431 IRFF432 IRFF433 AC15A
Contextual Info: SILICÔNIX INC IflE D "Silicon_ • ÔHS473S G ü m ô S Î 0 ■ IRFF430/431/432/433 incorporated Xf^ VTSiliconix ¡1 N-Channel Enhancement Mode Transistors TVZPi-D0! TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BRJDSS "W> Id (A IRFF430 500 1.5 2.75

2N3442

Abstract: E271 2n4347
Contextual Info: File Number 528.1 HA RR IS S E M I C O N D S E CT OR SbE T> 2N3442, 2N4347 4 3 0 2 2 7 1 Q Q H G 431 2 TÔ * H A S • -p High-Voltage Silicon N-P-N Transistors -3 3 - ‘3 T E R M IN A L D E S IG N A TIO N S c High-Power Devices for Applications in Industrial and Commercial Equipment

Contextual Info: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Tiva TM4C1292NCPDT Microcontroller D ATA SH E E T D S -T M 4C 1292 NCP DT - 1 5 6 3 8 . 2 7 11 S P M S 431 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2013 Texas Instruments Incorporated. Tiva and TivaWare are trademarks of Texas Instruments Incorporated. ARM and Thumb are

Transistor PJ 431

Abstract: T0-204MA PLA relay 2 c/o -MCC-12D-5A-WB PTC430 transistor w 431 h a 431 transistor PLA relay 1 c/o -MCC-12D-5A-WB
Contextual Info: 6115950 MICROSEMI CORP/POWER 71C 71 00322 p r - J J . r ? DE I h l l S T S O 0000325 1 | Series PTC 430, PTC 401 HighVoltoge NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating —400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue

BO241C

Abstract: BO 241 A bo 135 transistor ESM 30 LF amplifier 2N2197 2N2196 bc 303 transistor ESM 304 100 bd 135
Contextual Info: N PN Power transistors « Epitaxial Base » L F amplifier and switching » Transistors de puissance « Base épitaxiée » Amplification et commutation B F Type Compì. Case Boîtier Ptot W VcEO (V) *C (A) *21 E max min / 'C 1 (A) Tease 25 0 C iiC V c E sa t

transistor 431 c

Abstract: 431 transistor transistor 431 a 431 transistor transistor 431t transistor 431 N transistor N 431 a n 431 transistor 431t transistor 431 a
Contextual Info: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity

transistor w 431

Abstract: a 431 transistor transistor 431 c n 431 transistor a 103 m Transistor y 431 transistor transistor 431 N transistor 431 Transistor Arrays transistor 431 a
Contextual Info: CONTENTS [1 ] INDEX . 7 IFD FAM ILY TREE . TD/TB62 SERIES . TRANSISTOR ARRAY SELECTION GUIDE .

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

Contextual Info: bbS3T31 0033530 b88 Philips Semiconductors APX Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 N AnER PHILIPS/DISCRETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL MAX. UNIT drain-source voltage

UFN432

Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
Contextual Info: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.

cadstar pcb

Abstract: cadstar shape synario cadstar ALLEGRO PART NUMBER INDEX
Contextual Info: Synario ECS and Board Entry Index A Allegro Add symbol attributes . 3-38 Adding a netlister to a menu . 3-28, 3-41, 3-42 Allegro ECO Changes . 3-49

MG20G4GL1

Abstract: mg20g4
Contextual Info: MG20G4GL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 7-F A S T -O N -T A B # 1 1 0 4 -F A ST -O N -T A B # 2 5 0 FEATURES: . The Collector is Isolated from Case. . 4 Power Transistors and 4 Free Wheeling Diodes

NEC 2532 n 749

Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation

PH0810-35

Abstract: Transistor c54 F1 J37 transistor 431 N cl 740
Contextual Info: = an AMP - company Wireless Bipolar Power Transistor, 850 - 960 MHz 35W PH081 o-35 Features Designed for Linear Amplifier Applications Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP Class A: +53dBm Typ 3rd Order Intercept Point Common Emitter Configuration

2sd1273

Abstract: 2SD1273A
Contextual Info: Power Transistors 2SD1273, 2SD1273A 2S D 1273, 2S D 1273A Silicon NPN Triple-Diffused Planar Type High DC C urrent Gain Package D im ensions Power A m plifier I i f e , • Features • H ig h D C c u r r e n t g a in (hi-t) • G o o d lin e a r ity o f D C c u r r e n t g a in (Iife )

Contextual Info: N AUER PHILIPS/DISCRETE fc.'lE J> ^53^31 OO^fllSS fifl3 APX 2N4402 2N4403 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in plastic TO-92 envelope for use in general purpose applications. QUICK REFERENCE DATA 2N4403 2N4402

Contextual Info: N AflER PHILIPS/DISCRETE b^E D m bb53^31 DDSb4b5 53b IAPX BY328 32 kHz PARALLEL EFFICIENCY DIODE Double-diffused glass passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as an efficiency diode in transistorized horizontal deflection circuits of television

NE582N

Abstract: 75494 NE582
Contextual Info: NE582-N PIN CONFIGURATION DESCRIPTION The NE582 is a general interface device comprising a high current output transistor and drive circu itry in each of 6 elements. Each output transistor is individually capa­ ble o f sinking 400mA with a typical satura­

Contextual Info: Philips Components Data heat status Product specification data of Issue December 1990 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • BSN204/BSN204A Direct interface to C-MOS, TTL, etc. SYMBOL VDS PARAMETER CONDITIONS

2N2297

Abstract: transistor 2N2297 transistor w 431
Contextual Info: 2N2297 PHILIP S IN TE RN AT IO NA L 71100 2b SbE D 00425T4 bbT • PHIN SILICON PLANAR EPITAXIAL TRANSISTO R N-P-N transistor intended for large signal h.f. and v.h.f. amplifier applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter

marking 557 SOT143

Contextual Info: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor

2SB206

Abstract: 2SB205 2SB212 2SC1466 2sd206 2SB214 GERMANIUM TRANSISTOR 2SB208 transistor SE 431 2SD208
Contextual Info: C A T .N o .E 309 2SC431 th ru 2SC436 Use • For high-frequency power amplification • For high-frequency power switching Construction • NPN triple diffusion type SHINDENGEN’S silicon power transistors are all outside comparison in perfor­ mance and really epoch-making to realize that even one piece o f element is

4431 8 PIN

Abstract: 2N4430 2N4429 2N4431 2NS4429 to-117a
Contextual Info: li _n_Mm ra. m 140 Commerce Drive m lC rU S & n il Jet: Montgomeryvilie, PA 18936 215 631-9840 2N4429 -> 4431 s P&msfsxf ò y TaeR rtoissy RF & MICROWAVE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS FOR CLASS C APPLICATIONS FEATURES HIGH POWER GAIN 2N4431

mod500a

Contextual Info: CX-Silico n ix in c o r p o r a te d MOD500A/500B/500C 4 N-Channel Enhancement Mode Transistors HERMETIC MODULE TOP VIEW PRODUCT SUMMARY PART NUMBER V BR DSS (V) r DS(ON) ( il) (A) LEADFORM OPTION ID .S =G MOD500A 500 0.43 13 Straight =G MOD500B 500 0.43