N 341 AB Search Results

1n914 equivalent

Abstract: Y341 IT 341 N 341 AB 1N4148 1N914 TSC341 circuit for logic gates diode 331 321 CJ
Contextual Info: 580 Pleasant Street Watertown, M A 02172 617 924-9280 TSC341 Multi-Function Gates L /7 3 5 • Dual 2-Wide, 2-input AND-OR-tnvert • Dual Expandable  N D -N O R Features G e n e ra l Descriptions 341 341 • PR O VID ES COM PLEX FUNCTION WITH LOW SUPPLY D R A IN

ozdv 2471

Abstract: HIRSCHMANN 6 pin connector IEC 947-5-2 6700M
Contextual Info: OZDV 2471 P Bestell-Nr. / Ord. code / N° de cde. Beschreibung und Betriebsanleitung Optischer Schnittstellenwandler Description and Operating Instructions Optical interface converter 943 340-021 OZDV 2471 G Bestell-Nr. / Ord. code / N° de cde. 943 341-021

D0233

Abstract: 250JUA 250M IRFS340 IRFS341 Tj-25DC
Contextual Info: N-CHANNEL POWER MOSFETS IRFS340/341 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: N-CHANNEL POWER MOSFETS IRFP340/341 FEATURES • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

TIM3742-16SL-341

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM3742-16SL-341 TECHNICAL DATA FEATURES : • LOW IN TER M O D U LA TIO N D ISTO R TIO N HIGH GAIN G1dB = 11 dB at 3.3 G H z to 3.6 G Hz ; IM 3 = - 4 5 dBc at Po = 31.5 dBm, BROAD BAND INTERNALLY MATCHED

EUPEC TT 25 N 12

Contextual Info: EUPEC blE J> m 34032^7 G00115b 341 H U P E C TT 42 F, T D 42 F, DT42 F Elektrische Eigenschaften Electrical properties Höchstzulässige W erte M axim um rated values Periodische Vorwärts- und R ückw ärts-Spitzensperrspan n ung repetitive peak forw ard off-state

FPT120

Abstract: FPT120A FPT120B FPT120C FPT130 FPT130A OPTO-26 OPTO-28
Contextual Info: FAIRCHILD Û4 S EM I C ONDU C T OR DE ^341^1374 0D57BLD FPT120/A/B/C FPT130/A/B FAIRCHILD A Schlum berger Com pany High Sensitivity Silicon Phototransistors General Description The FPT120/A/B/C and FPT130/A/B are silicon nitride protected N PN Planar phototransistors with exceptionally

Contextual Info: PRELIMINARY DATA SHEET MSP 341 OD Multistandard Sound Processor < :> M IC R O N A S Edition Jan. 15, 1998 6251-422-3PD INTERMETALL 4bfi2711 0 0 0 ^ 3 4 MO T MSP 341OD PRELIMINARY DATASHEET Contents Page Section Title 5 1. 1.1. Introduction MSP 3410D Additional Features and Major Improvements compared with MSP 3410B

TIM3742-45SL-341

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROW AVE SEM ICO NDU CTO R TIM3742-45SL-341 TECHNICAL DATA FEATURES: • LOW INTER M O D U LA TIO N D ISTO R TIO N ■ HIGH GAIN G 1dB = 11 dB at 3.3 G H z to 3.6 G H z IM 3 = - 4 5 d B c a t P o = 35. 5 dBm, Single Carrier Level

Contextual Info: 7^237 G D M b l T H 341 • SGTH STP3N90 STP3N90FI SGS-THOMSON iL[lCT[^CQ ROÖOS * 7# N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STP3N90 STP3N 90FI dss 900 V 900 V RDS on) Id < 4 .5 Q < 4 .5 Q 3 .2 A 1.9 A ■ TYPICAL RDS(on) = 3.9 Q . ■ ■

s3h 02

Abstract: A1t smd sot23 a1z LMV118 avnet LMP2011 LMP2012 LMP2014 LMV771 LMV772
Contextual Info: SIS! S&I-SJ & : A m plifiers Made Simple"1 Amplifiers Made Simple ^. <& S. 2 i e | 4r is-®} tH 4 A m plifiers M ade Sim ple^- °1 ^ M A] jSL. ZI&]^. Amplifier Made Sim ple0! -2}-<§^!‘ ig t S .& ^ « 8 a] ^ • 341 SP IC E • • •§'A1®11 n # oj o.^a] ^

64 x 192 lcd module

Contextual Info: G T G - 192-341 1/64 DUTY, 1 / 9 192 x 64 d ots 1.0 DIMENSIONAL DRAWING 2 . 0 BLOCK DIAGRAM Item M odule Size(WxHxT) Viewing Area(WxH) Dots x Dots(WxH) Dot Pitcfa(WxH) Dot Size(WxH) N o m in al D im en sion s 11 3.0 X 7 1 .0 X 9.8 9 7 .0 192 0.4 8 0 .4 5

Contextual Info: Jan. 1806 T1M3742-8SL-341 1. R F PERFO RM ANCE S PE C IFIC ATIO N S C H AR A C TE R IS TIC S O utput Pow er a t 1dB C om pression Point Pow er Gain at 1dB C om pression Point D rain C urrant P ow er A dded E fficie ncy 3rd Order Intermoduiation Distortion

Contextual Info: Jan.1806 TI M 3742-8S L-341 1• n r r t a lll W nvnniW iH *ir c t a ir iM CHARACTERISTICS O utput Pow er at 1d B C o m p ression Point Pow er G ain at 1dB C om p ression Point D rain Current SYM B O L t i w .» "W CONDITION P id B MIN. TYP. MAX. UNIT 38.5

semikron skim

Contextual Info: SKiM 601GD126DM Absolute Maximum Ratings Symbol Conditions IGBT ./  7 ./( ; $ %   SKiM 5 SKiM 601GD126DM Preliminary Data Features           & ?=    &  Values Units 0*11 451 $631% 891 $341% : *1 < 41 = > 0+1 $0*+%

Contextual Info: SKiM 601GD126DM Absolute Maximum Ratings Symbol Conditions IGBT ./  7 ./( ; $ %   SKiM 5 SKiM 601GD126DM Preliminary Data Features           & ?=    &  Values Units 0*11 451 $631% 891 $341% : *1 < 41 = > 0+1 $0*+%

N 341 AB

Contextual Info: REV 43 40 yf'f A t ÄNDERUNG . . - cuij *2 * 'tc 9 u,»ct 9 2 &ZZ If Lethcrplatìenabariff *ndL Tobtile DATUM NAME ~| q c o ín á rr t 19.09.97. 02 m . 9 * SCHNITTA-A HlTÜALUOtí PÒH2~3u. 7 —3 Ò1.0S.8X 4*9. IméttMOuaM. 9 28 $-6 9 - i tu .

2N4032 FAIRCHILD SEMICONDUCTOR

Abstract: schlumberger 4031 2N396 2N4033 2n4037 transistor 2N4033 2N3946 2N3962 FTS03946 FTS03962
Contextual Info: FAIRCH IL D SEMICON DU CTO R 3469674 A4 FAIRCHILD 00575bE - 27562 D N PN Small Signal General Purpose Am plifier & Switch PACKAGE 2N3946 FTS03946 . . 40 V Min ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature

Contextual Info:
   
 


 

 
    341
89 ?@89       !"#$%!&'%!!"#$!&  !* +,-./0 5!! 60 :;9<
 =>60 AB9CD?@ 12) 7! 5! 7%! !  111EE %111LL

mono subwoofer 3 pin ic simple basic

Contextual Info: Edition S ept. 2 3 ,1 9 9 7 6 2 5 1 -4 2 2 -2 P D ITT INTERMETALL 4fafl2711 ODObMSfi bTQ MSP 341 OD PRELIMINARY DATA SHEET Contents Page Section Title 5 5 1. 1.1. Introduction MSP 3410D Additional Features and Major Improvements compared with MSP 3410B 6 6

74LS341

Abstract: 74LS340 74ls344 74LS210 IA2E 74LS31 LS344 s344 74LS310
Contextual Info: 8 -B it Buffers w ith Schm itt Trigger Inputs Features S N 5 4 /7 4 L S 3 1 0 S N 5 4 /7 4 S 3 1 0 S N 5 4 /7 4 L S 3 4 0 S N 5 4 /7 4 S 3 4 0 S N 5 4 /7 4 L S 3 4 1 S N 5 4 /7 4 S 3 4 1 S N 5 4 /7 4 L S 3 4 4 S N 5 4 /7 4 S 3 4 4 Ordering Information • Schmitt-trigger inputs guarantee high noise margin

eg8001

Abstract: EG-8001
Contextual Info: SED1341 F o e CMOS VIDEO - LCD INTERFACE VLI • DESCRIPTION The SED1341 Foe is a VLI (Video-LCD Interface) which converts separate video signals for CRT displays into signals used with dot-matrix Liquid Crystal Displays (LCD). When a sync signal separator and a data separator

EG-8001

Abstract: 14H1-100 1S2267 IC 2 5/EG8001 1sv73 eg8001 MAO-MA14 SED1341FOC
Contextual Info: SEDI 341 CMOS VIDEO - LCD INTERFACE VLI • DESCRIPTION The SED1341 is a VLI (video-LCD interface) for converting previously separated video signals, intended for a CRT display, into signals compatible with dot-matrix liquid-crystal displays (LCDs). When sync and data