N 341 AB Search Results

74x138

Abstract: 8086 bios function call ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM schematic diagram of laptop motherboard laptop motherboard resistors laptop intel MOTHERBOARD CIRCUIT diagram Phoenix BIOS 32 Pin PLCC 6268 sram laptop bios 8 pin laptop motherboard ic details with image
Contextual Info: inteJ ^ APPLICATION NOTE AP-341 October 1990 Designing an Updatable BIOS Using Flash Memory DON VERNER APPLICATION ENGINEER Order Number: 292077-001 Intel Corporation, 1990 6-248 AP-341 CONTENTS page 1.0 IN T R O D U C T IO N . 6-251

1n914 equivalent

Abstract: Y341 IT 341 N 341 AB 1N4148 1N914 TSC341 circuit for logic gates diode 331 321 CJ
Contextual Info: 580 Pleasant Street Watertown, M A 02172 617 924-9280 TSC341 Multi-Function Gates L /7 3 5 • Dual 2-Wide, 2-input AND-OR-tnvert • Dual Expandable  N D -N O R Features G e n e ra l Descriptions 341 341 • PR O VID ES COM PLEX FUNCTION WITH LOW SUPPLY D R A IN

B 342 Dc

Contextual Info: M an A M P com pany Matched GaAs SPST Switch DC-2000 MHz SW-341, SW-342 SW-341 CR-2 w/o Pin 1 Features 0.260 ' (6.60)- • L o w In s e r tio n Loss • U lira L o w D C P o w e r C o n su m p tio n • R isi S w itc h in g S p e e d 0.085 TYP (2.16) Ï

tact micro switch smd

Abstract: smd transistor 337 IBM 7914 circuit diagram 7643J 7906S-1 SMD MARKING CODE sdp micro tact switch TACT 10mm Square SWITCH SMD MARKING CODE SDT S7814
Contextual Info: w w w . b o u r n s . c o m Switches I. Product Selection Guide .340 II. Product Specifications are subject to change without notice.

TIM3742-16SL-341

Contextual Info: MICROWAVE POWER GaAs FET TIM3742-16SL-341 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level n HIGH POWER P1dB=42.5dBm at 3.3GHz to 3.6GHz n HIGH GAIN G1dB=10.0dB at 3.3GHz to 3.6GHz

TIM3742-45SL-341

Contextual Info: MICROWAVE POWER GaAs FET TIM3742-45SL-341 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.5dBm Single Carrier Level n HIGH POWER P1dB=46.5dBm at 3.3GHz to 3.6GHz n HIGH GAIN G1dB=11dB at 3.3GHz to 3.6GHz

TIM3472-4SL-341

Abstract: TIM3742-4SL-341
Contextual Info: MICROWAVE POWER GaAs FET TIM3742-4SL-341 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level n HIGH POWER P1dB=36.5dBm at 3.3GHz to 3.6GHz n HIGH GAIN G1dB=10.0dB at 3.3GHz to 3.6GHz

TIM3742-8SL-341

Contextual Info: MICROWAVE POWER GaAs FET TIM3742-8SL-341 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level n HIGH POWER P1dB=39.5dBm at 3.3GHz to 3.6GHz n HIGH GAIN G1dB=10.0dB at 3.3GHz to 3.6GHz

TIM3742-30SL-341

Contextual Info: MICROWAVE POWER GaAs FET TIM3742-30SL-341 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=45.0 dBm at 3.3GHz to 3.6GHz n HIGH GAIN G1dB=11.0dB at 3.3GHz to 3.6GHz

TIM3742-4SL-341

Contextual Info: MICROWAVE POWER GaAs FET TIM3742-4SL-341 PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=36.5dBm at 3.3GHz to 3.6GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=10.0dB at 3.3GHz to 3.6GHz RF PERFORMANCE SPECIFICATIONS Ta= 25° C

ozdv 2471

Abstract: HIRSCHMANN 6 pin connector IEC 947-5-2 6700M
Contextual Info: OZDV 2471 P Bestell-Nr. / Ord. code / N° de cde. Beschreibung und Betriebsanleitung Optischer Schnittstellenwandler Description and Operating Instructions Optical interface converter 943 340-021 OZDV 2471 G Bestell-Nr. / Ord. code / N° de cde. 943 341-021

D0233

Abstract: 250JUA 250M IRFS340 IRFS341 Tj-25DC
Contextual Info: N-CHANNEL POWER MOSFETS IRFS340/341 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: N-CHANNEL POWER MOSFETS IRFP340/341 FEATURES • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: FASCO INKS/ SENISYS 40E D B 341=1736 000131b b B S E N I CLED191 Series_ Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • Storage +100°C

Contextual Info: SENSITRON SEMICONDUCTOR SHD208505 TECHNICAL DATA DATA SHEET 341, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 500 VOLT, 0.415 OHM MOSFET IN A HERMETIC TO-254Z PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE

Contextual Info: Philips Semiconductors ^53*131 0031743 341 • APX PNP 1 GHz video transistors ^ Product specification BFQ255; BFQ255A N AMER PHILIPS/DISCRETE FEATURES b'lE ]> PINNING • High breakdown voltages PIN DESCRIPTION • Low output capacitance 1 emitter • High gain bandwidth product

12y sot 23

Abstract: BZV49 Series bzv 46 BZV49 BZV49-C24 33y sot 23 51Y diode mm1680 V40C3 C6V2 diode
Contextual Info: • b b S B ^ l 0025723 341 HAPX N AMER PHILIPS/DISCRETE b?E D B Z V 4 9 SERIES _ / V SILICON PLANAR VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes, in a SOT-89 plastic envelope, intended fo r stabilization applica­

Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

Transistor 5331

Abstract: BSV16 BSV17 BSV17-10 bsv16-16 BSV16-10 BSV15 BSV15-10 Silicon Epitaxial Planar Transistor philips
Contextual Info: I I N AMER PHIL I P S / D I S C R E T E t.'ÎE J> 002707b 341 I IAPX BSV15 to 17 ^ 5 3 ^ 3 1 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.

TIM3742-16SL-341

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM3742-16SL-341 TECHNICAL DATA FEATURES : • LOW IN TER M O D U LA TIO N D ISTO R TIO N HIGH GAIN G1dB = 11 dB at 3.3 G H z to 3.6 G Hz ; IM 3 = - 4 5 dBc at Po = 31.5 dBm, BROAD BAND INTERNALLY MATCHED

C6V8 PH

Abstract: C5V6 ph PH C5V1 C4V7 PH C5V1 ph C6V2 PH PH C3V6 PH c9v1 C7V5 PH 1R SOT89
Contextual Info: • bbS3S31 00SS723 341 H A P X N AMER PHILIPS/DISCRETE b7E » BZV49 SERIES J V SILICON PLANAR VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes, in a SOT-89 plastic envelope, intended fo r stabilization applica­ tions in thick and th in -film circuits.

EUPEC TT 25 N 12

Contextual Info: EUPEC blE J> m 34032^7 G00115b 341 H U P E C TT 42 F, T D 42 F, DT42 F Elektrische Eigenschaften Electrical properties Höchstzulässige W erte M axim um rated values Periodische Vorwärts- und R ückw ärts-Spitzensperrspan n ung repetitive peak forw ard off-state

91022C

Contextual Info: 75 A 1 .6 /5 .6 - NF RANGE CRIMP TYPE JACKS S TR A IG H T BULK HEAD JACKS, PANEL IN S U LA TE D screw-on or slide-on . 1 1 8 ( 3 ) n o n in s u la te d C ABLE P ART NO. Dia. a Dim . B Assembly code •1 0 2 D (0 2 .6 ) 75 P. L 910/22 m ini wrapping R 129 341

FPT120

Abstract: FPT120A FPT120B FPT120C FPT130 FPT130A OPTO-26 OPTO-28
Contextual Info: FAIRCHILD Û4 S EM I C ONDU C T OR DE ^341^1374 0D57BLD FPT120/A/B/C FPT130/A/B FAIRCHILD A Schlum berger Com pany High Sensitivity Silicon Phototransistors General Description The FPT120/A/B/C and FPT130/A/B are silicon nitride protected N PN Planar phototransistors with exceptionally