N 07 A Search Results

GSS4565

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/07/27 REVISED DATE :2005/09/29B N-CH BVDSS 40V N-CH RDS ON 25m N-CH ID 7.6A P-CH BVDSS -40V N-CH RDS(ON) 33m N-CH ID -6.5A GSS4565 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4565 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: APPROVFD: DATF: Description RELEASED REDRAWN Rev AW0# • A TITI F: Date 9/26/07 7/21/10 Appr n n .531 [13.50] .350 [8.89] -.050 [1.27] -.100 [2.54] [o.9o; 0.035 I—.423 [10.75] .350 [8.89] 0.063 [1.60; -.610 [15.50} RECOMMENDED PCB LAYOUT B SPECIFICATIONS:

GSB772SS

Contextual Info: ISSUED DATE :2005/11/07 REVISED DATE : GSB772SS P N P E P I TA X I A L P L A N A R T R A N S I S T O R Description The GSB772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. Features High current output up to -3A

G2N7002K

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/04/21 REVISED DATE :2005/07/14B G2N7002K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 60V 2 640mA Description The G2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,

TSSOP6 package

Abstract: GTT8205S TSSOP-6
Contextual Info: Pb Free Plating Product ISSUED DATE :2006/07/19 REVISED DATE :2006/11/09B GTT8205S BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 28m 6A Description The GTT8205S provide the designer with best combination of fast switching, low on-resistance and

ic 4075

Abstract: GSMBT4075 GSMBT2014 4075 i.c
Contextual Info: ISSUED DATE :2005/07/22 REVISED DATE : GSM BT 4075 NP N EP ITAXI AL P L ANAR T RANS ISTO R Description The GSMBT4075 is designed for general purpose switching and amplifier applications. Features Excellent hFE Linearity : hFE 0.1mA / hFE (2mA)=0.95 (Typ.)

Contextual Info: APPROVED: D ATE:_ Rev Description AW 0# Date 5/7/07 RELEASED • Appr TITLE: .232 [5 .9 0 ]- n In m .125 > 18] PCB LAYOUT SPECIFICATIONS: Material: DXXX Insulator: PBT, glass reinforced, rated UL 94V— 0 Insulator color: Black Contacts: Phosphor Bronze

1225B

Abstract: GTC9926E GTC9926
Contextual Info: ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B GTC9926E BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 28m 4.6A Description The GTC9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

GBAV152

Contextual Info: ISSUED DATE :2005/07/14 REVISED DATE : G B AV 1 5 2 S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 8 0 V, C U R R E N T 0 . 1 A Description The GBAV152 is designed for ultra high speed switching application. Package Dimensions Millimeter

Contextual Info: 2SK2118 Silicon N Channel MOS FET REJ03G1000-0200 Previous: ADE-208-1348 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control

brown green black

Contextual Info: DATA SHEET N° DS/154 TRASP SYSTEM ALPHANUMERICAL STRIP,ITEMS: BL117G - BL117M - BL117P REL: 1 DATE: 01/07/98 DRAWING REFERENCE ITEMS BL117G - BL117M - BL117P GENERAL CHARACTERISTICS The blister strips can be shown on the blue display stand it. MS001.The strips can be inserted into the strip container it. 118.

GD491SD

Contextual Info: CORPORATION GD491SD Description ISSUED DATE :2005/07/11 REVISED DATE : S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 2 5 V, C U R R E N T 1 A The GD491SD is low power rectification for switching power supply. Package Dimensions

2SC2483

Abstract: 2SA1195
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sh ¿6C <DIS CR ET E/ OP T O 2SC2483 D E ^ TQT7ESD 0D07S41 □ 07 5^ L D yr. S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS) Unit in mm HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. 9.9MAX. . gfg.gfeqg COLOR TV CLASS B SOUND OUTPUT APPLICATIONS.

Transistor M213

Abstract: 21089 J162 J428 MAX2310 MAX2310EEI MAX2312 MAX2312EEI MAX2314 MAX2314EEI
Contextual Info: 19-1507; Rev 2; 6/07 KIT ATION EVALU E L B AVAILA CDMA IF VGAs and I/Q Demodulators with VCO and Synthesizer The MAX2310/MAX2312/MAX2314/MAX2316 are IF receivers designed for dual-band, dual-mode, and single-mode N-CDMA and W-CDMA cellular phone systems. The signal path consists of a variable gain

GTC9926

Contextual Info: Pb Free Plating Product ISSUED DATE :2004/10/18 REVISED DATE :2006/07/27B GTC9926 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 28m 6A Description The GTC9926 provides the designer with the best combination of fast switching, ruggedized device design,

Contextual Info: TE X AS INS TRUM E NTS - P RO DUCTI O N D ATA Stellaris LM3S615 Microcontroller D ATA SH E E T D S -LM3S 615- 111 0 7 C o p yri g h t 2 0 07-2011 Te xa s In stru me n ts In co r porated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris® and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: TE X AS INS TRUM E NTS - P RO DUCTI O N D ATA Stellaris LM3S328 Microcontroller D ATA SH E E T D S -LM3S 328- 111 0 7 C o p yri g h t 2 0 07-2011 Te xa s In stru me n ts In co r porated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris® and StellarisWare® are registered trademarks of Texas Instruments

zoab

Abstract: Irf 630a
Contextual Info: WSfllBA -LDl^CKLTt/OHTOJ- 9 0 9 7250 T O S HIBA 5t, "5 ’6 C . 0 7 6 9 7 ~ CDI S C R E T E / O P T O 2SC3344 5 F J ' Ì D ,17ESD □D07tilì 7 07 SILIC O N NPN T R IP LE D IF F U SE D TYPE INDUSTRIAL APPLICATIONS SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S5D56 Microcontroller D ATA SHE E T D S -LM3S 5D 56 - 1 3 4 4 0 . 2 5 4 9 S P M S 242B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S1R21 Microcontroller D ATA SHE E T D S -LM3S 1R 21 - 1 3 4 4 2 . 2 5 4 9 S P M S 218L C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9U90 Microcontroller D ATA SHE E T D S -LM3S 9U 90 - 1 3 4 4 0 . 2 5 4 9 S P M S 252B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9D92 Microcontroller D ATA SHE E T D S -LM3S 9D 92 - 1 3 4 4 0 . 2 5 4 9 S P M S 257B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9C97 Microcontroller D ATA SHE E T D S -LM3S 9C 97 - 1 3 4 4 0 . 2 5 4 9 S P M S 247B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

hp 5082 2711

Abstract: 5082-2711
Contextual Info: HEWLETT-PACKARD i fT A J l tx x L l H 50E C MP N T S E W D E3 4447SÔ4 DOOSt . 53 T 6082-2273/74 5082-2295-98 5082-2350/51 5082-2400/01 5082-2520/21/05/66 5082-2701/02/06/07 5082-2711-14/23-24 5082-2817/18 SCHOTTKY BARRIER DIODES FOR MIXERS AND DETECTORS L E T T