N -CHANNEL POWER SOT 6 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .

CJ1012

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS CJ1012 N-Channel Power MOSFET SOT-523 General Description This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS ON . 1. GATE

V/AA3R

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET  1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.

6N10G-AA3-R

Abstract: 6n10g
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N10 Preliminary Power MOSFET 6 Amps, 100 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6 Amps, 100 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

NDT410EL

Contextual Info: N August 1996 NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

N1N20

Abstract: 6772 sot 223 STN1N20
Contextual Info: STN1N20 N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY Power MOSFET Features • Type VDSS RDS on max ID STN1N20 200 V < 1.5 Ω 1A 4 100% avalanche tested 1 Application ■ 2 3 SOT-223 Switching applications Description This device is an N-channel Power MOSFET

Contextual Info: February 2009 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

NDT453N

Contextual Info: September 1996 NDT453N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

NDT451AN

Contextual Info: July 1996 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

NDT453N

Abstract: 201A3 CBVK741B019 F63TNR F852 PN2222A
Contextual Info: September 1996 NDT453N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

CBVK741B019

Abstract: F63TNR F852 NDT451AN PN2222A
Contextual Info: July 1996 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

NDT451AN

Contextual Info: February 2009 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

FZ 300 R 06 KL

Abstract: 34B SOT NDT410EL L-253
Contextual Info: August 1 996 National Semiconductor" N DT410EL N-Channel Logic Level Enhancement M ode Field Effect Transistor Features General Description Power SOT N-Channel logic level enhancem ent mode power field effect transistors are produced using N ational's proprietary, high cell density, DMOS

NDT453N

Contextual Info: September 1996 National Semiconductor" N D T453N N-Channel Enhancement M ode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Power MOSFET N-Channel sot-23

Abstract: SOT-23 1g SOT23 1G
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM1592PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 FEATURE * N-Channel Enhancement

Contextual Info: September 1996 National Semiconductor NDT453N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Contextual Info: September 1996 National Semiconductor NDT451N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDT453N

Contextual Info: N September 1996 NDT453N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored

NDT3055

Contextual Info: N September 1996 NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored

CJ125

Abstract: NDT451N
Contextual Info: N September 1996 NDT451N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored

NDT014

Contextual Info: N September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored

NDT3055L

Abstract: TR NDT3055L
Contextual Info: N September 1996 NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features Power SOT logic level N-Channel enhancement mode field effect transistors are produced using National's proprietary, high cell density, DMOS