N -CHANNEL POWER SOT 6 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .

CJ1012

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS CJ1012 N-Channel Power MOSFET SOT-523 General Description This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS ON . 1. GATE

V/AA3R

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET  1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.

6N10G-AA3-R

Abstract: 6n10g
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N10 Preliminary Power MOSFET 6 Amps, 100 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6 Amps, 100 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

N1N20

Abstract: 6772 sot 223 STN1N20
Contextual Info: STN1N20 N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY Power MOSFET Features • Type VDSS RDS on max ID STN1N20 200 V < 1.5 Ω 1A 4 100% avalanche tested 1 Application ■ 2 3 SOT-223 Switching applications Description This device is an N-channel Power MOSFET

Contextual Info: February 2009 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

NDT453N

Abstract: 201A3 CBVK741B019 F63TNR F852 PN2222A
Contextual Info: September 1996 NDT453N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

NDT014

Contextual Info: September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

GM3055

Abstract: GM-305 8A SOT89
Contextual Info: GM3055 1/6 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The SOT-89 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Package Dimensions SOT-89

UT6402G-AG6-R

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT6402 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ 3 DESCRIPTION SOT-23 The UT6402 is N-Channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical

NDT451N

Contextual Info: September 1996 NDT451N N-Channel Enhancement Mode Field Effect Transistor General Description Features 5.5A, 30V. RDS ON = 0.05Ω @ VGS = 10V. Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3N25Z Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET 1  DESCRIPTION SOT-223 The UTC UF3N25Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge

um6k31n

Abstract: UM6K31
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UM6K31N Preliminary Power MOSFET SILICON N-CHANNEL MOSFET TRANSISTOR „ 6 DESCRIPTION 5 4 The UTC UM6K31N is a silicon N-channel MOS Field Effect Transistor. It can be used in switching applications. „ „ 3 SOT-363 SYMBOL ORDERING INFORMATION

NDT410EL

Abstract: JCR SOT
Contextual Info: August 1996 NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 2.1A 100V. RDS ON = 0.25Ω @ VGS = 5V. Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS

SST204

Contextual Info: SST204 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST204 The SST204 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well

Contextual Info: SST202 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST202 The SST202 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well

SST201

Contextual Info: SST201 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST201 The SST201 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well

Contextual Info: LSJ204 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix LSJ204 The LSJ204 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well

J201 Replacement

Abstract: LSJ201
Contextual Info: LSJ201 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J201 The LSJ201 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well

TSM1NB60CW

Abstract: N-Channel mosfet 600v 1a TSM1NB60 TSM1NB60CWRPG TSM1NB60CP
Contextual Info: TSM1NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 10 @ VGS =10V 0.5 General Description The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced

XP151A03A7MR

Contextual Info: XP151A03A7MR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.17Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-23 Package • Applications ■ General Description ■ Features The XP151A03A7MR is a N-Channel Power MOS FET with low on-state